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Dynamics of Polarization Switching in Mixed Phase Ferroelectric-Antiferroelectric HZO Thin Films

Dahlberg, Hannes LU and Wernersson, Lars-Erik LU (2023) IEEE 53rd European Solid-State Device Research Conference (ESSDERC) p.33-36
Abstract
The polarization switching dynamics for Hf 1-x Zr x O 2 (HZO) integrated on InAs is studied as a function of pulse width and amplitude. Due to a mixed ferroelectric/antiferroelectric phase at x=0.8, a more gradual total polarization update is shown compared to a fully ferroelectric Hf 0.5 Zr 0.5 O 2 stack. A lowered operating voltage is achieved in Hf 0.2 Zr 0.8 O 2 by activating an inner ferroelectric hysteresis loop, and the switching dynamics of this inner hysteresis is studied. The Nucleation-Limited Switching (NLS) model is used to determine switching times for both stacks and show increased switching speeds for low-voltage polarization in the Hf 0.2 Zr 0.8 O 2 inner hysteresis, suggesting a benefit of using high-Zr HZO for higher... (More)
The polarization switching dynamics for Hf 1-x Zr x O 2 (HZO) integrated on InAs is studied as a function of pulse width and amplitude. Due to a mixed ferroelectric/antiferroelectric phase at x=0.8, a more gradual total polarization update is shown compared to a fully ferroelectric Hf 0.5 Zr 0.5 O 2 stack. A lowered operating voltage is achieved in Hf 0.2 Zr 0.8 O 2 by activating an inner ferroelectric hysteresis loop, and the switching dynamics of this inner hysteresis is studied. The Nucleation-Limited Switching (NLS) model is used to determine switching times for both stacks and show increased switching speeds for low-voltage polarization in the Hf 0.2 Zr 0.8 O 2 inner hysteresis, suggesting a benefit of using high-Zr HZO for higher speed and lower operating voltages. (Less)
Please use this url to cite or link to this publication:
author
and
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
keywords
FERROELECTRICITY, HZO, Antiferroelectricity, Polarization, Switching dynamics, Indium Arsenide
host publication
ESSDERC 2023 - IEEE 53rd European Solid-State Device Research Conference (ESSDERC)
pages
4 pages
publisher
IEEE - Institute of Electrical and Electronics Engineers Inc.
conference name
IEEE 53rd European Solid-State Device Research Conference (ESSDERC)
conference location
Lisbon, Portugal
conference dates
2023-09-11 - 2023-09-14
external identifiers
  • scopus:85175457133
ISBN
979-835030423-7
DOI
10.1109/ESSDERC59256.2023.10268561
language
English
LU publication?
yes
id
95473b76-9a76-4b05-896f-8ad4ccabc047
date added to LUP
2023-10-08 12:05:56
date last changed
2023-12-06 13:14:48
@inproceedings{95473b76-9a76-4b05-896f-8ad4ccabc047,
  abstract     = {{The polarization switching dynamics for Hf 1-x Zr x O 2 (HZO) integrated on InAs is studied as a function of pulse width and amplitude. Due to a mixed ferroelectric/antiferroelectric phase at x=0.8, a more gradual total polarization update is shown compared to a fully ferroelectric Hf 0.5 Zr 0.5 O 2 stack. A lowered operating voltage is achieved in Hf 0.2 Zr 0.8 O 2 by activating an inner ferroelectric hysteresis loop, and the switching dynamics of this inner hysteresis is studied. The Nucleation-Limited Switching (NLS) model is used to determine switching times for both stacks and show increased switching speeds for low-voltage polarization in the Hf 0.2 Zr 0.8 O 2 inner hysteresis, suggesting a benefit of using high-Zr HZO for higher speed and lower operating voltages.}},
  author       = {{Dahlberg, Hannes and Wernersson, Lars-Erik}},
  booktitle    = {{ESSDERC 2023 - IEEE 53rd European Solid-State Device Research Conference (ESSDERC)}},
  isbn         = {{979-835030423-7}},
  keywords     = {{FERROELECTRICITY; HZO; Antiferroelectricity; Polarization; Switching dynamics; Indium Arsenide}},
  language     = {{eng}},
  month        = {{10}},
  pages        = {{33--36}},
  publisher    = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}},
  title        = {{Dynamics of Polarization Switching in Mixed Phase Ferroelectric-Antiferroelectric HZO Thin Films}},
  url          = {{http://dx.doi.org/10.1109/ESSDERC59256.2023.10268561}},
  doi          = {{10.1109/ESSDERC59256.2023.10268561}},
  year         = {{2023}},
}