Dynamics of Polarization Switching in Mixed Phase Ferroelectric-Antiferroelectric HZO Thin Films
(2023) IEEE 53rd European Solid-State Device Research Conference (ESSDERC) p.33-36- Abstract
- The polarization switching dynamics for Hf 1-x Zr x O 2 (HZO) integrated on InAs is studied as a function of pulse width and amplitude. Due to a mixed ferroelectric/antiferroelectric phase at x=0.8, a more gradual total polarization update is shown compared to a fully ferroelectric Hf 0.5 Zr 0.5 O 2 stack. A lowered operating voltage is achieved in Hf 0.2 Zr 0.8 O 2 by activating an inner ferroelectric hysteresis loop, and the switching dynamics of this inner hysteresis is studied. The Nucleation-Limited Switching (NLS) model is used to determine switching times for both stacks and show increased switching speeds for low-voltage polarization in the Hf 0.2 Zr 0.8 O 2 inner hysteresis, suggesting a benefit of using high-Zr HZO for higher... (More)
- The polarization switching dynamics for Hf 1-x Zr x O 2 (HZO) integrated on InAs is studied as a function of pulse width and amplitude. Due to a mixed ferroelectric/antiferroelectric phase at x=0.8, a more gradual total polarization update is shown compared to a fully ferroelectric Hf 0.5 Zr 0.5 O 2 stack. A lowered operating voltage is achieved in Hf 0.2 Zr 0.8 O 2 by activating an inner ferroelectric hysteresis loop, and the switching dynamics of this inner hysteresis is studied. The Nucleation-Limited Switching (NLS) model is used to determine switching times for both stacks and show increased switching speeds for low-voltage polarization in the Hf 0.2 Zr 0.8 O 2 inner hysteresis, suggesting a benefit of using high-Zr HZO for higher speed and lower operating voltages. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/95473b76-9a76-4b05-896f-8ad4ccabc047
- author
- Dahlberg, Hannes LU and Wernersson, Lars-Erik LU
- organization
- publishing date
- 2023-10-02
- type
- Chapter in Book/Report/Conference proceeding
- publication status
- published
- subject
- keywords
- FERROELECTRICITY, HZO, Antiferroelectricity, Polarization, Switching dynamics, Indium Arsenide
- host publication
- ESSDERC 2023 - IEEE 53rd European Solid-State Device Research Conference (ESSDERC)
- pages
- 4 pages
- publisher
- IEEE - Institute of Electrical and Electronics Engineers Inc.
- conference name
- IEEE 53rd European Solid-State Device Research Conference (ESSDERC)
- conference location
- Lisbon, Portugal
- conference dates
- 2023-09-11 - 2023-09-14
- external identifiers
-
- scopus:85175457133
- ISBN
- 979-835030423-7
- DOI
- 10.1109/ESSDERC59256.2023.10268561
- language
- English
- LU publication?
- yes
- id
- 95473b76-9a76-4b05-896f-8ad4ccabc047
- date added to LUP
- 2023-10-08 12:05:56
- date last changed
- 2023-12-06 13:14:48
@inproceedings{95473b76-9a76-4b05-896f-8ad4ccabc047, abstract = {{The polarization switching dynamics for Hf 1-x Zr x O 2 (HZO) integrated on InAs is studied as a function of pulse width and amplitude. Due to a mixed ferroelectric/antiferroelectric phase at x=0.8, a more gradual total polarization update is shown compared to a fully ferroelectric Hf 0.5 Zr 0.5 O 2 stack. A lowered operating voltage is achieved in Hf 0.2 Zr 0.8 O 2 by activating an inner ferroelectric hysteresis loop, and the switching dynamics of this inner hysteresis is studied. The Nucleation-Limited Switching (NLS) model is used to determine switching times for both stacks and show increased switching speeds for low-voltage polarization in the Hf 0.2 Zr 0.8 O 2 inner hysteresis, suggesting a benefit of using high-Zr HZO for higher speed and lower operating voltages.}}, author = {{Dahlberg, Hannes and Wernersson, Lars-Erik}}, booktitle = {{ESSDERC 2023 - IEEE 53rd European Solid-State Device Research Conference (ESSDERC)}}, isbn = {{979-835030423-7}}, keywords = {{FERROELECTRICITY; HZO; Antiferroelectricity; Polarization; Switching dynamics; Indium Arsenide}}, language = {{eng}}, month = {{10}}, pages = {{33--36}}, publisher = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}}, title = {{Dynamics of Polarization Switching in Mixed Phase Ferroelectric-Antiferroelectric HZO Thin Films}}, url = {{http://dx.doi.org/10.1109/ESSDERC59256.2023.10268561}}, doi = {{10.1109/ESSDERC59256.2023.10268561}}, year = {{2023}}, }