Scaling of Vertical InAs–GaSb Nanowire Tunneling Field-Effect Transistors on Si
(2016) In IEEE Electron Device Letters 37(5). p.549-552- Abstract
- We demonstrate improved performance due to enhanced electrostatic control achieved by diameter scaling and gate placement in vertical InAs-GaSb tunneling field-effect transistors integrated on Si substrates. The best subthreshold swing, 68 mV/decade at VDS=0.3 V, was achieved for a device with 20-nm InAs diamter. The on-current for the same device was 35 µA/µm at VGS=0.5 V and VDS=0.5 V. The fabrication technique used allows downscaling of the InAs diameter down to 11 nm with a flexible gate placement.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/47a0e728-6312-4ed3-9ca8-45b436b95736
- author
- Memisevic, Elvedin LU ; Svensson, Johannes LU ; Hellenbrand, Markus LU ; Lind, Erik LU and Wernersson, Lars-Erik LU
- organization
- publishing date
- 2016-05-05
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- HSQ, nanowire, III-V, TFET, transistor, InAs-GaSb
- in
- IEEE Electron Device Letters
- volume
- 37
- issue
- 5
- pages
- 549 - 552
- publisher
- IEEE - Institute of Electrical and Electronics Engineers Inc.
- external identifiers
-
- scopus:84964637866
- wos:000374868300006
- ISSN
- 0741-3106
- DOI
- 10.1109/LED.2016.2545861
- language
- English
- LU publication?
- yes
- id
- 47a0e728-6312-4ed3-9ca8-45b436b95736
- date added to LUP
- 2016-06-23 09:31:32
- date last changed
- 2024-08-09 14:57:44
@article{47a0e728-6312-4ed3-9ca8-45b436b95736, abstract = {{We demonstrate improved performance due to enhanced electrostatic control achieved by diameter scaling and gate placement in vertical InAs-GaSb tunneling field-effect transistors integrated on Si substrates. The best subthreshold swing, 68 mV/decade at VDS=0.3 V, was achieved for a device with 20-nm InAs diamter. The on-current for the same device was 35 µA/µm at VGS=0.5 V and VDS=0.5 V. The fabrication technique used allows downscaling of the InAs diameter down to 11 nm with a flexible gate placement.}}, author = {{Memisevic, Elvedin and Svensson, Johannes and Hellenbrand, Markus and Lind, Erik and Wernersson, Lars-Erik}}, issn = {{0741-3106}}, keywords = {{HSQ; nanowire; III-V; TFET; transistor; InAs-GaSb}}, language = {{eng}}, month = {{05}}, number = {{5}}, pages = {{549--552}}, publisher = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}}, series = {{IEEE Electron Device Letters}}, title = {{Scaling of Vertical InAs–GaSb Nanowire Tunneling Field-Effect Transistors on Si}}, url = {{https://lup.lub.lu.se/search/files/47395537/Scaling_of_Vertical_InAs_GaSb_Nanowire_TFET_on_Si_Memisevic.pdf}}, doi = {{10.1109/LED.2016.2545861}}, volume = {{37}}, year = {{2016}}, }