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Scaling of Vertical InAs–GaSb Nanowire Tunneling Field-Effect Transistors on Si

Memisevic, Elvedin LU ; Svensson, Johannes LU ; Hellenbrand, Markus LU ; Lind, Erik LU and Wernersson, Lars-Erik LU (2016) In IEEE Electron Device Letters 37(5). p.549-552
Abstract
We demonstrate improved performance due to enhanced electrostatic control achieved by diameter scaling and gate placement in vertical InAs-GaSb tunneling field-effect transistors integrated on Si substrates. The best subthreshold swing, 68 mV/decade at VDS=0.3 V, was achieved for a device with 20-nm InAs diamter. The on-current for the same device was 35 µA/µm at VGS=0.5 V and VDS=0.5 V. The fabrication technique used allows downscaling of the InAs diameter down to 11 nm with a flexible gate placement.
Please use this url to cite or link to this publication:
author
; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
HSQ, nanowire, III-V, TFET, transistor, InAs-GaSb
in
IEEE Electron Device Letters
volume
37
issue
5
pages
549 - 552
publisher
IEEE - Institute of Electrical and Electronics Engineers Inc.
external identifiers
  • scopus:84964637866
  • wos:000374868300006
ISSN
0741-3106
DOI
10.1109/LED.2016.2545861
language
English
LU publication?
yes
id
47a0e728-6312-4ed3-9ca8-45b436b95736
date added to LUP
2016-06-23 09:31:32
date last changed
2023-11-07 13:08:10
@article{47a0e728-6312-4ed3-9ca8-45b436b95736,
  abstract     = {{We demonstrate improved performance due to enhanced electrostatic control achieved by diameter scaling and gate placement in vertical InAs-GaSb tunneling field-effect transistors integrated on Si substrates. The best subthreshold swing, 68 mV/decade at VDS=0.3 V, was achieved for a device with 20-nm InAs diamter. The on-current for the same device was 35 µA/µm at VGS=0.5 V and VDS=0.5 V. The fabrication technique used allows downscaling of the InAs diameter down to 11 nm with a flexible gate placement.}},
  author       = {{Memisevic, Elvedin and Svensson, Johannes and Hellenbrand, Markus and Lind, Erik and Wernersson, Lars-Erik}},
  issn         = {{0741-3106}},
  keywords     = {{HSQ; nanowire; III-V; TFET; transistor; InAs-GaSb}},
  language     = {{eng}},
  month        = {{05}},
  number       = {{5}},
  pages        = {{549--552}},
  publisher    = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}},
  series       = {{IEEE Electron Device Letters}},
  title        = {{Scaling of Vertical InAs–GaSb Nanowire Tunneling Field-Effect Transistors on Si}},
  url          = {{https://lup.lub.lu.se/search/files/47395537/Scaling_of_Vertical_InAs_GaSb_Nanowire_TFET_on_Si_Memisevic.pdf}},
  doi          = {{10.1109/LED.2016.2545861}},
  volume       = {{37}},
  year         = {{2016}},
}