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Scaling of Vertical InAs–GaSb Nanowire Tunneling Field-Effect Transistors on Si

Memisevic, Elvedin LU ; Svensson, Johannes LU ; Hellenbrand, Markus LU ; Lind, Erik LU and Wernersson, Lars-Erik LU (2016) In IEEE Electron Device Letters 37(5). p.549-552
Abstract
We demonstrate improved performance due to enhanced electrostatic control achieved by diameter scaling and gate placement in vertical InAs-GaSb tunneling field-effect transistors integrated on Si substrates. The best subthreshold swing, 68 mV/decade at VDS=0.3 V, was achieved for a device with 20-nm InAs diamter. The on-current for the same device was 35 µA/µm at VGS=0.5 V and VDS=0.5 V. The fabrication technique used allows downscaling of the InAs diameter down to 11 nm with a flexible gate placement.
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
HSQ, nanowire, III-V, TFET, transistor, InAs-GaSb
in
IEEE Electron Device Letters
volume
37
issue
5
pages
549 - 552
publisher
IEEE--Institute of Electrical and Electronics Engineers Inc.
external identifiers
  • scopus:84964637866
  • wos:000374868300006
ISSN
0741-3106
DOI
10.1109/LED.2016.2545861
language
English
LU publication?
yes
id
47a0e728-6312-4ed3-9ca8-45b436b95736
date added to LUP
2016-06-23 09:31:32
date last changed
2017-04-09 04:47:03
@article{47a0e728-6312-4ed3-9ca8-45b436b95736,
  abstract     = {We demonstrate improved performance due to enhanced electrostatic control achieved by diameter scaling and gate placement in vertical InAs-GaSb tunneling field-effect transistors integrated on Si substrates. The best subthreshold swing, 68 mV/decade at VDS=0.3 V, was achieved for a device with 20-nm InAs diamter. The on-current for the same device was 35 µA/µm at VGS=0.5 V and VDS=0.5 V. The fabrication technique used allows downscaling of the InAs diameter down to 11 nm with a flexible gate placement.},
  author       = {Memisevic, Elvedin and Svensson, Johannes and Hellenbrand, Markus and Lind, Erik and Wernersson, Lars-Erik},
  issn         = {0741-3106},
  keyword      = {HSQ,nanowire,III-V,TFET,transistor,InAs-GaSb},
  language     = {eng},
  month        = {05},
  number       = {5},
  pages        = {549--552},
  publisher    = {IEEE--Institute of Electrical and Electronics Engineers Inc.},
  series       = {IEEE Electron Device Letters},
  title        = {Scaling of Vertical InAs–GaSb Nanowire Tunneling Field-Effect Transistors on Si},
  url          = {http://dx.doi.org/10.1109/LED.2016.2545861},
  volume       = {37},
  year         = {2016},
}