Optimization of Near-Surface Quantum Well Processing
(2021) In Physica Status Solidi (A) Applications and Materials Science 218(7).- Abstract
Herein, an optimized process flow of near-surface quantum well metal–oxide–semiconductor field-effect transistors (MOSFETs) based on planar layers of metalorganic vapor-phase epitaxy (MOVPE) grown InxGa1−xAs is presented. It is found that by an optimized pre-growth cleaning and post-metal anneal, the quality of the MOS structure can be greatly enhanced. This optimization is a first step toward realization of a scalable platform for topological qubits based on a well-defined network of lateral InxGa1−xAs nanowires grown by selective area growth.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/2094f67b-1fee-44ef-aaff-d5aa2392575a
- author
- Olausson, Patrik LU ; Södergren, Lasse LU ; Borg, Mattias LU and Lind, Erik LU
- organization
- publishing date
- 2021-01-12
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- InGaAs, metalorganic vapor-phase epitaxy, metal–oxide–semiconductor field-effect transistors, mobility, quantum wells
- in
- Physica Status Solidi (A) Applications and Materials Science
- volume
- 218
- issue
- 7
- article number
- 2000720
- publisher
- Wiley-Blackwell
- external identifiers
-
- scopus:85100035897
- ISSN
- 1862-6300
- DOI
- 10.1002/pssa.202000720
- project
- III-V Devices for Emerging Electronic Applications
- language
- English
- LU publication?
- yes
- id
- 2094f67b-1fee-44ef-aaff-d5aa2392575a
- date added to LUP
- 2021-02-08 10:17:43
- date last changed
- 2024-08-08 11:45:52
@article{2094f67b-1fee-44ef-aaff-d5aa2392575a, abstract = {{<p>Herein, an optimized process flow of near-surface quantum well metal–oxide–semiconductor field-effect transistors (MOSFETs) based on planar layers of metalorganic vapor-phase epitaxy (MOVPE) grown In<sub>x</sub>Ga<sub>1−x</sub>As is presented. It is found that by an optimized pre-growth cleaning and post-metal anneal, the quality of the MOS structure can be greatly enhanced. This optimization is a first step toward realization of a scalable platform for topological qubits based on a well-defined network of lateral In<sub>x</sub>Ga<sub>1−x</sub>As nanowires grown by selective area growth.</p>}}, author = {{Olausson, Patrik and Södergren, Lasse and Borg, Mattias and Lind, Erik}}, issn = {{1862-6300}}, keywords = {{InGaAs; metalorganic vapor-phase epitaxy; metal–oxide–semiconductor field-effect transistors; mobility; quantum wells}}, language = {{eng}}, month = {{01}}, number = {{7}}, publisher = {{Wiley-Blackwell}}, series = {{Physica Status Solidi (A) Applications and Materials Science}}, title = {{Optimization of Near-Surface Quantum Well Processing}}, url = {{http://dx.doi.org/10.1002/pssa.202000720}}, doi = {{10.1002/pssa.202000720}}, volume = {{218}}, year = {{2021}}, }