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Optimization of Near-Surface Quantum Well Processing

Olausson, Patrik LU ; Södergren, Lasse LU ; Borg, Mattias LU orcid and Lind, Erik LU (2021) In Physica Status Solidi (A) Applications and Materials Science 218(7).
Abstract

Herein, an optimized process flow of near-surface quantum well metal–oxide–semiconductor field-effect transistors (MOSFETs) based on planar layers of metalorganic vapor-phase epitaxy (MOVPE) grown InxGa1−xAs is presented. It is found that by an optimized pre-growth cleaning and post-metal anneal, the quality of the MOS structure can be greatly enhanced. This optimization is a first step toward realization of a scalable platform for topological qubits based on a well-defined network of lateral InxGa1−xAs nanowires grown by selective area growth.

Please use this url to cite or link to this publication:
author
; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
InGaAs, metalorganic vapor-phase epitaxy, metal–oxide–semiconductor field-effect transistors, mobility, quantum wells
in
Physica Status Solidi (A) Applications and Materials Science
volume
218
issue
7
article number
2000720
publisher
Wiley-Blackwell
external identifiers
  • scopus:85100035897
ISSN
1862-6300
DOI
10.1002/pssa.202000720
language
English
LU publication?
yes
id
2094f67b-1fee-44ef-aaff-d5aa2392575a
date added to LUP
2021-02-08 10:17:43
date last changed
2022-05-04 23:41:21
@article{2094f67b-1fee-44ef-aaff-d5aa2392575a,
  abstract     = {{<p>Herein, an optimized process flow of near-surface quantum well metal–oxide–semiconductor field-effect transistors (MOSFETs) based on planar layers of metalorganic vapor-phase epitaxy (MOVPE) grown In<sub>x</sub>Ga<sub>1−x</sub>As is presented. It is found that by an optimized pre-growth cleaning and post-metal anneal, the quality of the MOS structure can be greatly enhanced. This optimization is a first step toward realization of a scalable platform for topological qubits based on a well-defined network of lateral In<sub>x</sub>Ga<sub>1−x</sub>As nanowires grown by selective area growth.</p>}},
  author       = {{Olausson, Patrik and Södergren, Lasse and Borg, Mattias and Lind, Erik}},
  issn         = {{1862-6300}},
  keywords     = {{InGaAs; metalorganic vapor-phase epitaxy; metal–oxide–semiconductor field-effect transistors; mobility; quantum wells}},
  language     = {{eng}},
  month        = {{01}},
  number       = {{7}},
  publisher    = {{Wiley-Blackwell}},
  series       = {{Physica Status Solidi (A) Applications and Materials Science}},
  title        = {{Optimization of Near-Surface Quantum Well Processing}},
  url          = {{http://dx.doi.org/10.1002/pssa.202000720}},
  doi          = {{10.1002/pssa.202000720}},
  volume       = {{218}},
  year         = {{2021}},
}