Lars-Erik Wernersson
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- 2018
- Fabrication of Tunnel Field-Effect Transistors
- Sub-100-nm gate-length scaling of vertical InAs/InGaAs nanowire MOSFETs on Si
- Impact of source doping on the performance of vertical InAs/InGaAsSb/GaSb nanowire Tunnel Field-Effect Transistors
- Vertical nanowire TFETs with channel diameter down to 10 nm and point S MIN of 35 mV/decade
- A Self-aligned Gate-last Process applied to All-III-V CMOS on Si
- Effect of Gate Oxide Defects on Tunnel Transistor RF Performance
- Reflection of Coherent Millimeter-Wave Wavelets on Dispersive Materials : A Study on Porcine Skin
- Impact of Non-idealities on the Performance of InAs/(In)GaAsSb/GaSb Tunnel FETs
- RF Characterisation of Vertical III-V Nanowire Tunnel FETs
- Capacitance Measurements in Vertical III-V Nanowire TFETs