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- 2024
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Mark
Source Design of Vertical III-V Nanowire Tunnel Field-Effect Transistors
(
- Contribution to journal › Article
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Mark
A 29.5 GHz Rectifier with 14.5 dB Dynamic Power Range for Energy Harvester Using Vertical Nanowire Tunnel FETs
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
III-V heterostructure tunnel field-effect transistor operation at different temperature regimes
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- Contribution to journal › Article
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Mark
Cryogenic Evaluation of Resistive Random Access Memory With Enhanced Endurance at 14 K
2024) In IEEE Transactions on Electron Devices(
- Contribution to journal › Article
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Mark
Multifunctional Reconfigurable Operations in an Ultra-Scaled Ferroelectric Negative Transconductance Transistor
(
- Contribution to journal › Article
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Mark
RF Characterization of Ferroelectric MOS Capacitors
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- Contribution to journal › Article
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Mark
A Reconfigurable Ferroelectric Transistor as An Ultra-Scaled Cell for Low-Power In-Memory Data Processing
2024) In Advanced Electronic Materials(
- Contribution to journal › Article
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Mark
TFET Circuit Configurations Operating below 60 mV/dec
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- Contribution to journal › Article
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Mark
Cryogenic Ferroelectricity of HZO Capacitors on a III-V Semiconductor
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- Contribution to journal › Article
- 2023
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Mark
Sensing single domains and individual defects in scaled ferroelectrics
(
- Contribution to journal › Article