Lars-Erik Wernersson
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- 2022
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Mark
Performance enhancement of GaSb vertical nanowire p-type MOSFETs on Si by rapid thermal annealing
(
- Contribution to journal › Article
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Mark
Improved Electrostatics through Digital Etch Schemes in Vertical GaSb Nanowire p-MOSFETs on Si
(
- Contribution to journal › Article
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Mark
Directed Self‐Assembly for Dense Vertical III–V Nanowires on Si and Implications for Gate All‐Around Deposition
2022) In Advanced Electronic Materials(
- Contribution to journal › Article
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Mark
Hydrogen plasma enhanced oxide removal on GaSb planar and nanowire surfaces
2022) In Applied Surface Science(
- Contribution to journal › Article
- 2021
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Mark
Ultra-Scaled AlOx Diffusion Barriers for Multibit HfOx RRAM Operation
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- Contribution to journal › Article
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Mark
Controlling Filament Stability in Scaled Oxides (3 nm) for High Endurance (>106) Low Voltage ITO/HfO2 RRAMs for Future 3D Integration
2021) 2021 Device Research Conference (DRC)(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Increased Breakdown Voltage in Vertical Heterostructure III-V Nanowire MOSFETs with a Field Plate
(
- Contribution to journal › Article
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Mark
Lateral III-V Nanowire MOSFETs in Low-Noise Amplifier Stages
2021) In IEEE Transactions on Microwave Theory and Techniques(
- Contribution to journal › Article
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Mark
Doping Profiles in Ultrathin Vertical VLS-Grown InAs Nanowire MOSFETs with High Performance
(
- Contribution to journal › Article
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Mark
Millimeter-Wave Vertical III-V Nanowire MOSFET Device-To-Circuit Co-Design
(
- Contribution to journal › Article