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Interface Characterization of Plasma-Treated InAs Electrodes for Resistive Random-Access Memories Using Capacitance–Voltage Methods

Andersen, André LU ; Mamidala, Saketh Ram LU orcid and Wernersson, Lars Erik LU (2025) In Physica Status Solidi (A) Applications and Materials Science
Abstract

InAs nanowires have been used as selectors and electrodes in a one-transistor one-resistor resistive random-access memory (RRAM) configuration for increased memory scalability. Such oxide-based memories not only show promise both in conventional memory technology but also as analog memories for neural networks. The small areas of the oxide elements, however, result in challenges for electrical characterization of the oxide–semiconductor interface. By analyzing larger test structures, it is possible to perform impedance spectroscopy on the oxide–InAs interface. In this article, HfO2-based RRAMs on InAs are fabricated using plasma-enhanced atomic layer deposition. The effect of the plasma-length is investigated using... (More)

InAs nanowires have been used as selectors and electrodes in a one-transistor one-resistor resistive random-access memory (RRAM) configuration for increased memory scalability. Such oxide-based memories not only show promise both in conventional memory technology but also as analog memories for neural networks. The small areas of the oxide elements, however, result in challenges for electrical characterization of the oxide–semiconductor interface. By analyzing larger test structures, it is possible to perform impedance spectroscopy on the oxide–InAs interface. In this article, HfO2-based RRAMs on InAs are fabricated using plasma-enhanced atomic layer deposition. The effect of the plasma-length is investigated using capacitance–voltage and DC measurements. It is found that an increased plasma-length results not only in a higher total electron trapping but also in the formation of a more stable interfacial oxide, possibly related to the stoichiometry of the complex InAs oxide. The findings give us a better understanding of the noise- and switching-performance of scaled nanowire devices.

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author
; and
organization
publishing date
type
Contribution to journal
publication status
in press
subject
keywords
ALD, capacitance-voltage, HfO, InAs, resistive random-access memory
in
Physica Status Solidi (A) Applications and Materials Science
publisher
Wiley-VCH Verlag
external identifiers
  • scopus:85214361681
ISSN
1862-6300
DOI
10.1002/pssa.202400689
language
English
LU publication?
yes
additional info
Publisher Copyright: © 2024 The Author(s). physica status solidi (a) applications and materials science published by Wiley-VCH GmbH.
id
eea98dab-1a47-4434-9003-804d6f4f6dc1
date added to LUP
2025-03-12 15:55:03
date last changed
2025-06-04 23:18:56
@article{eea98dab-1a47-4434-9003-804d6f4f6dc1,
  abstract     = {{<p>InAs nanowires have been used as selectors and electrodes in a one-transistor one-resistor resistive random-access memory (RRAM) configuration for increased memory scalability. Such oxide-based memories not only show promise both in conventional memory technology but also as analog memories for neural networks. The small areas of the oxide elements, however, result in challenges for electrical characterization of the oxide–semiconductor interface. By analyzing larger test structures, it is possible to perform impedance spectroscopy on the oxide–InAs interface. In this article, HfO<sub>2</sub>-based RRAMs on InAs are fabricated using plasma-enhanced atomic layer deposition. The effect of the plasma-length is investigated using capacitance–voltage and DC measurements. It is found that an increased plasma-length results not only in a higher total electron trapping but also in the formation of a more stable interfacial oxide, possibly related to the stoichiometry of the complex InAs oxide. The findings give us a better understanding of the noise- and switching-performance of scaled nanowire devices.</p>}},
  author       = {{Andersen, André and Mamidala, Saketh Ram and Wernersson, Lars Erik}},
  issn         = {{1862-6300}},
  keywords     = {{ALD; capacitance-voltage; HfO; InAs; resistive random-access memory}},
  language     = {{eng}},
  publisher    = {{Wiley-VCH Verlag}},
  series       = {{Physica Status Solidi (A) Applications and Materials Science}},
  title        = {{Interface Characterization of Plasma-Treated InAs Electrodes for Resistive Random-Access Memories Using Capacitance–Voltage Methods}},
  url          = {{http://dx.doi.org/10.1002/pssa.202400689}},
  doi          = {{10.1002/pssa.202400689}},
  year         = {{2025}},
}