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- 2025
-
Mark
Interface Characterization of Plasma-Treated InAs Electrodes for Resistive Random-Access Memories Using Capacitance–Voltage Methods
Andersen, André LU ; Mamidala, Saketh Ram LU
and Wernersson, Lars Erik
LU
(2025)
In Physica Status Solidi (A) Applications and Materials Science
- Contribution to journal › Article
- 2011
-
Mark
Temperature and frequency characterization of InAs nanowire and HfO2 interface using capacitance-voltage method
Astromskas, Gvidas LU ; Storm, Kristian LU ; Caroff, Philippe LU ; Borgström, Magnus LU
; Lind, Erik
LU
and Wernersson, Lars-Erik
LU
(2011)
EMRS 2010 Spring Meeting on Post-Si-CMOS Electronic Devices - The Role of Ge and III-V Materials
88(4).
p.444-447
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2002
-
Mark
Schottky barrier height studies of Au/4H-SiC(0001) using photoemission and synchrotron radiation
- Contribution to journal › Article