High-k/InGaAs interface defects at cryogenic temperature
(2023) In Solid-State Electronics 207.- Abstract
Oxide defects in the high-k/InGaAs MOS system are investigated. The behaviour of these traps is explored from room temperature down to 10 K. This study reveals that the exchange of free carriers between oxide states and either the conduction or the valence band is strongly temperature dependant. The capture and emission of electrons is strongly suppressed at 10 K as demonstrated by the collapse of the capacitance frequency dispersion in accumulation for n-InGaAs MOS devices, though hysteresis in the C-V sweeps is still present at 10 K. Phonon assisted tunnelling processes are considered in the simulation of electrical characteristics. The simulated data match very well the experimental characteristics and provide energy and spatial... (More)
Oxide defects in the high-k/InGaAs MOS system are investigated. The behaviour of these traps is explored from room temperature down to 10 K. This study reveals that the exchange of free carriers between oxide states and either the conduction or the valence band is strongly temperature dependant. The capture and emission of electrons is strongly suppressed at 10 K as demonstrated by the collapse of the capacitance frequency dispersion in accumulation for n-InGaAs MOS devices, though hysteresis in the C-V sweeps is still present at 10 K. Phonon assisted tunnelling processes are considered in the simulation of electrical characteristics. The simulated data match very well the experimental characteristics and provide energy and spatial mapping of oxide defects. The multi phonon theory also help explain the impedance data temperature dependence. This study also reveals an asymmetry in the free carrier trapping between n and p type devices, where hole trapping is more significant at 10 K.
(Less)
- author
- Cherkaoui, K. LU ; La Torraca, P. ; Lin, J. ; Maraviglia, N. ; Andersen, A. LU ; Wernersson, L. E. LU ; Padovani, A. ; Larcher, L. and Hurley, P. K.
- organization
- publishing date
- 2023
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- Cryogenic impedance measurements, Device simulation, High-k/InGaAs interface defects, Oxide defects
- in
- Solid-State Electronics
- volume
- 207
- article number
- 108719
- publisher
- Elsevier
- external identifiers
-
- scopus:85165676442
- ISSN
- 0038-1101
- DOI
- 10.1016/j.sse.2023.108719
- language
- English
- LU publication?
- yes
- id
- 8f7067e5-fe2d-4968-a64e-95ecf6d50859
- date added to LUP
- 2023-10-31 13:20:52
- date last changed
- 2023-11-08 10:59:21
@article{8f7067e5-fe2d-4968-a64e-95ecf6d50859, abstract = {{<p>Oxide defects in the high-k/InGaAs MOS system are investigated. The behaviour of these traps is explored from room temperature down to 10 K. This study reveals that the exchange of free carriers between oxide states and either the conduction or the valence band is strongly temperature dependant. The capture and emission of electrons is strongly suppressed at 10 K as demonstrated by the collapse of the capacitance frequency dispersion in accumulation for n-InGaAs MOS devices, though hysteresis in the C-V sweeps is still present at 10 K. Phonon assisted tunnelling processes are considered in the simulation of electrical characteristics. The simulated data match very well the experimental characteristics and provide energy and spatial mapping of oxide defects. The multi phonon theory also help explain the impedance data temperature dependence. This study also reveals an asymmetry in the free carrier trapping between n and p type devices, where hole trapping is more significant at 10 K.</p>}}, author = {{Cherkaoui, K. and La Torraca, P. and Lin, J. and Maraviglia, N. and Andersen, A. and Wernersson, L. E. and Padovani, A. and Larcher, L. and Hurley, P. K.}}, issn = {{0038-1101}}, keywords = {{Cryogenic impedance measurements; Device simulation; High-k/InGaAs interface defects; Oxide defects}}, language = {{eng}}, publisher = {{Elsevier}}, series = {{Solid-State Electronics}}, title = {{High-k/InGaAs interface defects at cryogenic temperature}}, url = {{http://dx.doi.org/10.1016/j.sse.2023.108719}}, doi = {{10.1016/j.sse.2023.108719}}, volume = {{207}}, year = {{2023}}, }