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Geometric control of diffusing elements on InAs semiconductor surfaces via metal contacts

Benter, Sandra LU ; Jönsson, Adam LU ; Johansson, Jonas LU orcid ; Zhu, Lin LU orcid ; Golias, Evangelos LU orcid ; Wernersson, Lars-Erik LU and Mikkelsen, Anders LU (2023) In Nature Communications 14(1).
Abstract
Local geometric control of basic synthesis parameters, such as elemental composition, is important for bottom-up synthesis and top-down device definition on-chip but remains a significant challenge. Here, we propose to use lithographically defined metal stacks for regulating the surface concentrations of freely diffusing synthesis elements on compound semiconductors. This is demonstrated by geometric control of Indium droplet formation on Indium Arsenide surfaces, an important consequence of incongruent evaporation. Lithographic defined Aluminium/Palladium metal patterns induce well-defined droplet-free zones during annealing up to 600 °C, while the metal patterns retain their lateral geometry. Compositional and structural analysis is... (More)
Local geometric control of basic synthesis parameters, such as elemental composition, is important for bottom-up synthesis and top-down device definition on-chip but remains a significant challenge. Here, we propose to use lithographically defined metal stacks for regulating the surface concentrations of freely diffusing synthesis elements on compound semiconductors. This is demonstrated by geometric control of Indium droplet formation on Indium Arsenide surfaces, an important consequence of incongruent evaporation. Lithographic defined Aluminium/Palladium metal patterns induce well-defined droplet-free zones during annealing up to 600 °C, while the metal patterns retain their lateral geometry. Compositional and structural analysis is performed, as well as theoretical modelling. The Pd acts as a sink for free In atoms, lowering their surface concentration locally and inhibiting droplet formation. Al acts as a diffusion barrier altering Pd’s efficiency. The behaviour depends only on a few basic assumptions and should be applicable to lithography-epitaxial manufacturing processes of compound semiconductors in general. (Less)
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author
; ; ; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
droplets, InAs, surface, XPEEM, metal contacts
in
Nature Communications
volume
14
issue
1
article number
4541
publisher
Nature Publishing Group
external identifiers
  • scopus:85165882813
  • pmid:37500640
ISSN
2041-1723
DOI
10.1038/s41467-023-40157-5
language
English
LU publication?
yes
id
0c04b3f1-526c-4c5f-bf87-8204547c500b
date added to LUP
2023-08-31 10:44:36
date last changed
2024-03-01 03:00:13
@article{0c04b3f1-526c-4c5f-bf87-8204547c500b,
  abstract     = {{Local geometric control of basic synthesis parameters, such as elemental composition, is important for bottom-up synthesis and top-down device definition on-chip but remains a significant challenge. Here, we propose to use lithographically defined metal stacks for regulating the surface concentrations of freely diffusing synthesis elements on compound semiconductors. This is demonstrated by geometric control of Indium droplet formation on Indium Arsenide surfaces, an important consequence of incongruent evaporation. Lithographic defined Aluminium/Palladium metal patterns induce well-defined droplet-free zones during annealing up to 600 °C, while the metal patterns retain their lateral geometry. Compositional and structural analysis is performed, as well as theoretical modelling. The Pd acts as a sink for free In atoms, lowering their surface concentration locally and inhibiting droplet formation. Al acts as a diffusion barrier altering Pd’s efficiency. The behaviour depends only on a few basic assumptions and should be applicable to lithography-epitaxial manufacturing processes of compound semiconductors in general.}},
  author       = {{Benter, Sandra and Jönsson, Adam and Johansson, Jonas and Zhu, Lin and Golias, Evangelos and Wernersson, Lars-Erik and Mikkelsen, Anders}},
  issn         = {{2041-1723}},
  keywords     = {{droplets, InAs, surface, XPEEM, metal contacts}},
  language     = {{eng}},
  number       = {{1}},
  publisher    = {{Nature Publishing Group}},
  series       = {{Nature Communications}},
  title        = {{Geometric control of diffusing elements on InAs semiconductor surfaces via metal contacts}},
  url          = {{http://dx.doi.org/10.1038/s41467-023-40157-5}},
  doi          = {{10.1038/s41467-023-40157-5}},
  volume       = {{14}},
  year         = {{2023}},
}