Geometric control of diffusing elements on InAs semiconductor surfaces via metal contacts
(2023) In Nature Communications 14(1).- Abstract
- Local geometric control of basic synthesis parameters, such as elemental composition, is important for bottom-up synthesis and top-down device definition on-chip but remains a significant challenge. Here, we propose to use lithographically defined metal stacks for regulating the surface concentrations of freely diffusing synthesis elements on compound semiconductors. This is demonstrated by geometric control of Indium droplet formation on Indium Arsenide surfaces, an important consequence of incongruent evaporation. Lithographic defined Aluminium/Palladium metal patterns induce well-defined droplet-free zones during annealing up to 600 °C, while the metal patterns retain their lateral geometry. Compositional and structural analysis is... (More)
- Local geometric control of basic synthesis parameters, such as elemental composition, is important for bottom-up synthesis and top-down device definition on-chip but remains a significant challenge. Here, we propose to use lithographically defined metal stacks for regulating the surface concentrations of freely diffusing synthesis elements on compound semiconductors. This is demonstrated by geometric control of Indium droplet formation on Indium Arsenide surfaces, an important consequence of incongruent evaporation. Lithographic defined Aluminium/Palladium metal patterns induce well-defined droplet-free zones during annealing up to 600 °C, while the metal patterns retain their lateral geometry. Compositional and structural analysis is performed, as well as theoretical modelling. The Pd acts as a sink for free In atoms, lowering their surface concentration locally and inhibiting droplet formation. Al acts as a diffusion barrier altering Pd’s efficiency. The behaviour depends only on a few basic assumptions and should be applicable to lithography-epitaxial manufacturing processes of compound semiconductors in general. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/0c04b3f1-526c-4c5f-bf87-8204547c500b
- author
- Benter, Sandra LU ; Jönsson, Adam LU ; Johansson, Jonas LU ; Zhu, Lin LU ; Golias, Evangelos LU ; Wernersson, Lars-Erik LU and Mikkelsen, Anders LU
- organization
-
- Synchrotron Radiation Research
- NanoLund: Centre for Nanoscience
- LTH Profile Area: Nanoscience and Semiconductor Technology
- LU Profile Area: Light and Materials
- Department of Electrical and Information Technology
- Engineering Nanoscience (M.Sc.Eng.)
- Solid State Physics
- MAX IV, Software
- MAX IV Laboratory
- LTH Profile Area: AI and Digitalization
- Nano Electronics (research group)
- LTH Profile Area: Photon Science and Technology
- publishing date
- 2023
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- droplets, InAs, surface, XPEEM, metal contacts
- in
- Nature Communications
- volume
- 14
- issue
- 1
- article number
- 4541
- publisher
- Nature Publishing Group
- external identifiers
-
- scopus:85165882813
- pmid:37500640
- ISSN
- 2041-1723
- DOI
- 10.1038/s41467-023-40157-5
- language
- English
- LU publication?
- yes
- id
- 0c04b3f1-526c-4c5f-bf87-8204547c500b
- date added to LUP
- 2023-08-31 10:44:36
- date last changed
- 2024-03-01 03:00:13
@article{0c04b3f1-526c-4c5f-bf87-8204547c500b, abstract = {{Local geometric control of basic synthesis parameters, such as elemental composition, is important for bottom-up synthesis and top-down device definition on-chip but remains a significant challenge. Here, we propose to use lithographically defined metal stacks for regulating the surface concentrations of freely diffusing synthesis elements on compound semiconductors. This is demonstrated by geometric control of Indium droplet formation on Indium Arsenide surfaces, an important consequence of incongruent evaporation. Lithographic defined Aluminium/Palladium metal patterns induce well-defined droplet-free zones during annealing up to 600 °C, while the metal patterns retain their lateral geometry. Compositional and structural analysis is performed, as well as theoretical modelling. The Pd acts as a sink for free In atoms, lowering their surface concentration locally and inhibiting droplet formation. Al acts as a diffusion barrier altering Pd’s efficiency. The behaviour depends only on a few basic assumptions and should be applicable to lithography-epitaxial manufacturing processes of compound semiconductors in general.}}, author = {{Benter, Sandra and Jönsson, Adam and Johansson, Jonas and Zhu, Lin and Golias, Evangelos and Wernersson, Lars-Erik and Mikkelsen, Anders}}, issn = {{2041-1723}}, keywords = {{droplets, InAs, surface, XPEEM, metal contacts}}, language = {{eng}}, number = {{1}}, publisher = {{Nature Publishing Group}}, series = {{Nature Communications}}, title = {{Geometric control of diffusing elements on InAs semiconductor surfaces via metal contacts}}, url = {{http://dx.doi.org/10.1038/s41467-023-40157-5}}, doi = {{10.1038/s41467-023-40157-5}}, volume = {{14}}, year = {{2023}}, }