Strained Inx Ga(1-x )As/InP near surface quantum wells and MOSFETs
(2022) In Applied Physics Letters 120(9).- Abstract
We present electronic band structure properties of strained InxGa(1-x)As/InP heterostructure near surface quantum wells oriented in the (100) crystallographic direction using eight-band k · p theory, which are further parameterized by an energy level, effective mass, and nonparabolicity factor. The electronic band structure parameters are studied for the well composition of 0.2 ≤ x ≤ 1 and thickness from 5 to 13 nm. The bandgap and effective mass of the strained wells are increased for x >0.53 due to compression strain and decreased for x < 0.53 due to tensile strain as compared to that of unstrained wells. The calculated band structure parameters are utilized in modeling long channel In0.71Ga0.29As/InP quantum well MOSFETs, and... (More)
We present electronic band structure properties of strained InxGa(1-x)As/InP heterostructure near surface quantum wells oriented in the (100) crystallographic direction using eight-band k · p theory, which are further parameterized by an energy level, effective mass, and nonparabolicity factor. The electronic band structure parameters are studied for the well composition of 0.2 ≤ x ≤ 1 and thickness from 5 to 13 nm. The bandgap and effective mass of the strained wells are increased for x >0.53 due to compression strain and decreased for x < 0.53 due to tensile strain as compared to that of unstrained wells. The calculated band structure parameters are utilized in modeling long channel In0.71Ga0.29As/InP quantum well MOSFETs, and the model is validated against measured I-V and low frequency C-V characteristics at room temperature and cryogenic temperature. Exponential band tails and first- and second-order variation of the charge centroid capacitance and interface trap density are included in the electrostatic model. The Urbach parameter obtained in the model is E0 = 9 meV, which gives subthreshold swing (SS) of 18 mV/dec at T = 13 K and agrees with the measured SS of 19 mV/dec. Interface trap density is approximately three orders higher at T = 300 K compared to T = 13 K due to multi-phonon activated traps. This model emphasizes the importance of considering disorders in the system in developing device simulators for cryogenic applications.
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- author
- Garigapati, Navya Sri LU ; Södergren, Lasse LU ; Olausson, Patrik LU and Lind, Erik LU
- organization
- publishing date
- 2022-02-28
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Applied Physics Letters
- volume
- 120
- issue
- 9
- article number
- 092105
- publisher
- American Institute of Physics (AIP)
- external identifiers
-
- scopus:85126385066
- ISSN
- 0003-6951
- DOI
- 10.1063/5.0073918
- project
- III-V Devices for Emerging Electronic Applications
- language
- English
- LU publication?
- yes
- id
- d8e3a13c-68b8-4650-828c-1c882dce6b8e
- date added to LUP
- 2022-05-20 11:04:04
- date last changed
- 2024-01-18 07:25:25
@article{d8e3a13c-68b8-4650-828c-1c882dce6b8e,
abstract = {{<p>We present electronic band structure properties of strained InxGa(1-x)As/InP heterostructure near surface quantum wells oriented in the (100) crystallographic direction using eight-band k · p theory, which are further parameterized by an energy level, effective mass, and nonparabolicity factor. The electronic band structure parameters are studied for the well composition of 0.2 ≤ x ≤ 1 and thickness from 5 to 13 nm. The bandgap and effective mass of the strained wells are increased for x >0.53 due to compression strain and decreased for x < 0.53 due to tensile strain as compared to that of unstrained wells. The calculated band structure parameters are utilized in modeling long channel In0.71Ga0.29As/InP quantum well MOSFETs, and the model is validated against measured I-V and low frequency C-V characteristics at room temperature and cryogenic temperature. Exponential band tails and first- and second-order variation of the charge centroid capacitance and interface trap density are included in the electrostatic model. The Urbach parameter obtained in the model is E0 = 9 meV, which gives subthreshold swing (SS) of 18 mV/dec at T = 13 K and agrees with the measured SS of 19 mV/dec. Interface trap density is approximately three orders higher at T = 300 K compared to T = 13 K due to multi-phonon activated traps. This model emphasizes the importance of considering disorders in the system in developing device simulators for cryogenic applications. </p>}},
author = {{Garigapati, Navya Sri and Södergren, Lasse and Olausson, Patrik and Lind, Erik}},
issn = {{0003-6951}},
language = {{eng}},
month = {{02}},
number = {{9}},
publisher = {{American Institute of Physics (AIP)}},
series = {{Applied Physics Letters}},
title = {{Strained In<sub>x </sub>Ga<sub>(1-</sub><sub>x </sub><sub>)</sub>As/InP near surface quantum wells and MOSFETs}},
url = {{http://dx.doi.org/10.1063/5.0073918}},
doi = {{10.1063/5.0073918}},
volume = {{120}},
year = {{2022}},
}