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Doping Profiles in Ultrathin Vertical VLS-Grown InAs Nanowire MOSFETs with High Performance

Jönsson, Adam LU ; Svensson, Johannes LU ; Fiordaliso, Elisabetta Maria ; Lind, Erik LU ; Hellenbrand, Markus LU and Wernersson, Lars Erik LU (2021) In ACS Applied Electronic Materials 3(12). p.5240-5247
Abstract

Thin vertical nanowires based on III-V compound semiconductors are viable candidates as channel material in metal oxide semiconductor field effect transistors (MOSFETs) due to attractive carrier transport properties. However, for improved performance in terms of current density as well as contact resistance, adequate characterization techniques for resolving doping distribution within thin vertical nanowires are required. We present a novel method of axially probing the doping profile by systematically changing the gate position, at a constant gate length Lg of 50 nm and a channel diameter of 12 nm, along a vertical nanowire MOSFET and utilizing the variations in threshold voltage VT shift (∼100 mV). The method is further validated... (More)

Thin vertical nanowires based on III-V compound semiconductors are viable candidates as channel material in metal oxide semiconductor field effect transistors (MOSFETs) due to attractive carrier transport properties. However, for improved performance in terms of current density as well as contact resistance, adequate characterization techniques for resolving doping distribution within thin vertical nanowires are required. We present a novel method of axially probing the doping profile by systematically changing the gate position, at a constant gate length Lg of 50 nm and a channel diameter of 12 nm, along a vertical nanowire MOSFET and utilizing the variations in threshold voltage VT shift (∼100 mV). The method is further validated using the well-established technique of electron holography to verify the presence of the doping profile. Combined, device and material characterizations allow us to in-depth study the origin of the threshold voltage variability typically present for metal organic chemical vapor deposition (MOCVD)-grown III-V nanowire devices.

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author
; ; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
doping, electron holography, III-V, InAs, MOSFET, nanowire, VLS growth
in
ACS Applied Electronic Materials
volume
3
issue
12
pages
5240 - 5247
publisher
The American Chemical Society (ACS)
external identifiers
  • pmid:34988463
  • scopus:85120361797
ISSN
2637-6113
DOI
10.1021/acsaelm.1c00729
language
English
LU publication?
yes
id
3c236dbe-77ac-40a8-ac20-950c6d3ca87a
date added to LUP
2021-12-14 10:27:21
date last changed
2022-08-04 21:08:34
@article{3c236dbe-77ac-40a8-ac20-950c6d3ca87a,
  abstract     = {{<p>Thin vertical nanowires based on III-V compound semiconductors are viable candidates as channel material in metal oxide semiconductor field effect transistors (MOSFETs) due to attractive carrier transport properties. However, for improved performance in terms of current density as well as contact resistance, adequate characterization techniques for resolving doping distribution within thin vertical nanowires are required. We present a novel method of axially probing the doping profile by systematically changing the gate position, at a constant gate length Lg of 50 nm and a channel diameter of 12 nm, along a vertical nanowire MOSFET and utilizing the variations in threshold voltage VT shift (∼100 mV). The method is further validated using the well-established technique of electron holography to verify the presence of the doping profile. Combined, device and material characterizations allow us to in-depth study the origin of the threshold voltage variability typically present for metal organic chemical vapor deposition (MOCVD)-grown III-V nanowire devices.</p>}},
  author       = {{Jönsson, Adam and Svensson, Johannes and Fiordaliso, Elisabetta Maria and Lind, Erik and Hellenbrand, Markus and Wernersson, Lars Erik}},
  issn         = {{2637-6113}},
  keywords     = {{doping; electron holography; III-V; InAs; MOSFET; nanowire; VLS growth}},
  language     = {{eng}},
  number       = {{12}},
  pages        = {{5240--5247}},
  publisher    = {{The American Chemical Society (ACS)}},
  series       = {{ACS Applied Electronic Materials}},
  title        = {{Doping Profiles in Ultrathin Vertical VLS-Grown InAs Nanowire MOSFETs with High Performance}},
  url          = {{http://dx.doi.org/10.1021/acsaelm.1c00729}},
  doi          = {{10.1021/acsaelm.1c00729}},
  volume       = {{3}},
  year         = {{2021}},
}