Effects of Interface Oxidation on Noise Properties and Performance in III–V Vertical Nanowire Memristors
(2023) In ACS Applied Materials and Interfaces 15(15).- Abstract
- Memristors implemented as resistive random-access memories (RRAMs) owing to their low power consumption, scalability, and speed are promising candidates for in-memory computing and neuromorphic applications. Moreover, a vertical 3D implementation of RRAMs enables high-density crossbar arrays at a minimal footprint. Co-integrated III–V vertical gate-all-around MOSFET selectors in a one-transistor-one-resistor (1T1R) configuration have recently been demonstrated where an interlayer (IL)-oxide has been shown to enable high RRAM endurance needed for applications like machine learning. In this work, we evaluate the role of the IL-oxide directly on InAs vertical nanowires using low-frequency noise characterization. We show that the low-frequency... (More)
- Memristors implemented as resistive random-access memories (RRAMs) owing to their low power consumption, scalability, and speed are promising candidates for in-memory computing and neuromorphic applications. Moreover, a vertical 3D implementation of RRAMs enables high-density crossbar arrays at a minimal footprint. Co-integrated III–V vertical gate-all-around MOSFET selectors in a one-transistor-one-resistor (1T1R) configuration have recently been demonstrated where an interlayer (IL)-oxide has been shown to enable high RRAM endurance needed for applications like machine learning. In this work, we evaluate the role of the IL-oxide directly on InAs vertical nanowires using low-frequency noise characterization. We show that the low-frequency noise or the 1/f-noise in InAs vertical RRAMs can be reduced by more than 3 orders of magnitude by engineering the InAs/high-k interface. We also report that the noise properties of the vertical 1T1R do not degrade significantly after RRAM integration making them attractive to be used in emerging electronic circuits. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/a17f0972-2a3b-4101-94a7-b7e5822fd09f
- author
- Mamidala, Saketh Ram LU ; Svensson, Johannes LU and Wernersson, Lars-Erik LU
- organization
- publishing date
- 2023-04-07
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- Nanowire, Memristor, RRAM, InAs, Low-Frequency Noise, III-V
- in
- ACS Applied Materials and Interfaces
- volume
- 15
- issue
- 15
- publisher
- The American Chemical Society (ACS)
- external identifiers
-
- pmid:37026413
- scopus:85152203692
- ISSN
- 1944-8244
- DOI
- 10.1021/acsami.2c21669
- language
- English
- LU publication?
- yes
- id
- a17f0972-2a3b-4101-94a7-b7e5822fd09f
- date added to LUP
- 2023-06-22 16:06:39
- date last changed
- 2023-11-22 19:37:02
@article{a17f0972-2a3b-4101-94a7-b7e5822fd09f, abstract = {{Memristors implemented as resistive random-access memories (RRAMs) owing to their low power consumption, scalability, and speed are promising candidates for in-memory computing and neuromorphic applications. Moreover, a vertical 3D implementation of RRAMs enables high-density crossbar arrays at a minimal footprint. Co-integrated III–V vertical gate-all-around MOSFET selectors in a one-transistor-one-resistor (1T1R) configuration have recently been demonstrated where an interlayer (IL)-oxide has been shown to enable high RRAM endurance needed for applications like machine learning. In this work, we evaluate the role of the IL-oxide directly on InAs vertical nanowires using low-frequency noise characterization. We show that the low-frequency noise or the 1/f-noise in InAs vertical RRAMs can be reduced by more than 3 orders of magnitude by engineering the InAs/high-k interface. We also report that the noise properties of the vertical 1T1R do not degrade significantly after RRAM integration making them attractive to be used in emerging electronic circuits.}}, author = {{Mamidala, Saketh Ram and Svensson, Johannes and Wernersson, Lars-Erik}}, issn = {{1944-8244}}, keywords = {{Nanowire; Memristor; RRAM; InAs; Low-Frequency Noise; III-V}}, language = {{eng}}, month = {{04}}, number = {{15}}, publisher = {{The American Chemical Society (ACS)}}, series = {{ACS Applied Materials and Interfaces}}, title = {{Effects of Interface Oxidation on Noise Properties and Performance in III–V Vertical Nanowire Memristors}}, url = {{http://dx.doi.org/10.1021/acsami.2c21669}}, doi = {{10.1021/acsami.2c21669}}, volume = {{15}}, year = {{2023}}, }