Advanced

Facet-selective group-III incorporation in InGaAs template assisted selective epitaxy

Borg, Mattias LU ; Gignac, Lynne; Bruley, John; Malmgren, Andreas; Sant, Saurabh; Convertino, Clarissa; Rossell, Marta D.; Sousa, Marilyne; Breslin, Chris and Riel, Heike, et al. (2019) In Nanotechnology 30(8).
Abstract

InGaAs is a potential candidate for Si replacement in upcoming advanced technological nodes because of its excellent electron transport properties and relatively low interface defect density in dielectric gate stacks. Therefore, integrating InGaAs devices with the established Si platforms is highly important. Using template-assisted selective epitaxy (TASE), InGaAs nanowires can be monolithically integrated with high crystal quality, although the mechanisms of group III incorporation in this ternary material have not been thoroughly investigated. Here we present a detailed study of the compositional variations of InGaAs nanostructures epitaxially grown on Si(111) and Silicon-on-insulator substrates by TASE. We present a combination of... (More)

InGaAs is a potential candidate for Si replacement in upcoming advanced technological nodes because of its excellent electron transport properties and relatively low interface defect density in dielectric gate stacks. Therefore, integrating InGaAs devices with the established Si platforms is highly important. Using template-assisted selective epitaxy (TASE), InGaAs nanowires can be monolithically integrated with high crystal quality, although the mechanisms of group III incorporation in this ternary material have not been thoroughly investigated. Here we present a detailed study of the compositional variations of InGaAs nanostructures epitaxially grown on Si(111) and Silicon-on-insulator substrates by TASE. We present a combination of XRD data and detailed EELS maps and find that the final Ga/In chemical composition depends strongly on both growth parameters and the growth facet type, leading to complex compositional sub-structures throughout the crystals. We can further conclude that the composition is governed by the facet-dependent chemical reaction rates at low temperature and low V/III ratio, while at higher temperature and V/III ratio, the incorporation is transport limited. In this case we see indications that the transport is a competition between Knudsen flow and surface diffusion.

(Less)
Please use this url to cite or link to this publication:
author
, et al. (More)
(Less)
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Nanotechnology
volume
30
issue
8
publisher
IOP Publishing
external identifiers
  • scopus:85059439065
ISSN
0957-4484
DOI
10.1088/1361-6528/aaf547
language
English
LU publication?
yes
id
876d26d3-61f7-4d47-8975-7cbd6d9efea4
date added to LUP
2019-01-11 08:15:19
date last changed
2019-02-20 11:42:31
@article{876d26d3-61f7-4d47-8975-7cbd6d9efea4,
  abstract     = {<p>InGaAs is a potential candidate for Si replacement in upcoming advanced technological nodes because of its excellent electron transport properties and relatively low interface defect density in dielectric gate stacks. Therefore, integrating InGaAs devices with the established Si platforms is highly important. Using template-assisted selective epitaxy (TASE), InGaAs nanowires can be monolithically integrated with high crystal quality, although the mechanisms of group III incorporation in this ternary material have not been thoroughly investigated. Here we present a detailed study of the compositional variations of InGaAs nanostructures epitaxially grown on Si(111) and Silicon-on-insulator substrates by TASE. We present a combination of XRD data and detailed EELS maps and find that the final Ga/In chemical composition depends strongly on both growth parameters and the growth facet type, leading to complex compositional sub-structures throughout the crystals. We can further conclude that the composition is governed by the facet-dependent chemical reaction rates at low temperature and low V/III ratio, while at higher temperature and V/III ratio, the incorporation is transport limited. In this case we see indications that the transport is a competition between Knudsen flow and surface diffusion.</p>},
  articleno    = {084004},
  author       = {Borg, Mattias and Gignac, Lynne and Bruley, John and Malmgren, Andreas and Sant, Saurabh and Convertino, Clarissa and Rossell, Marta D. and Sousa, Marilyne and Breslin, Chris and Riel, Heike and Moselund, Kirsten E. and Schmid, Heinz},
  issn         = {0957-4484},
  language     = {eng},
  number       = {8},
  publisher    = {IOP Publishing},
  series       = {Nanotechnology},
  title        = {Facet-selective group-III incorporation in InGaAs template assisted selective epitaxy},
  url          = {http://dx.doi.org/10.1088/1361-6528/aaf547},
  volume       = {30},
  year         = {2019},
}