Vertical, High-Performance 12 nm diameter InAs Nanowire MOSFETs on Si using an all III-V CMOS process
(2018) Compound Semiconductor Week 2018
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/a99833db-b896-49fb-9447-0a9ffa3c695e
- author
- Jönsson, Adam LU ; Svensson, Johannes LU and Wernersson, Lars-Erik LU
- organization
- publishing date
- 2018-01-16
- type
- Contribution to conference
- publication status
- published
- subject
- conference name
- Compound Semiconductor Week 2018
- conference location
- Boston, United States
- conference dates
- 2018-05-29 - 2018-06-01
- language
- Swedish
- LU publication?
- yes
- id
- a99833db-b896-49fb-9447-0a9ffa3c695e
- date added to LUP
- 2019-02-19 17:13:00
- date last changed
- 2019-02-21 13:09:57
@misc{a99833db-b896-49fb-9447-0a9ffa3c695e, author = {{Jönsson, Adam and Svensson, Johannes and Wernersson, Lars-Erik}}, language = {{swe}}, month = {{01}}, title = {{Vertical, High-Performance 12 nm diameter InAs Nanowire MOSFETs on Si using an all III-V CMOS process}}, url = {{https://lup.lub.lu.se/search/files/58107741/CSW2018_abstract3_AdamJ_nsson.pdf}}, year = {{2018}}, }