Gautham Rangasamy (Former)

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2024
Mark Source Design of Vertical III-V Nanowire Tunnel Field-Effect Transistors
Rangasamy, Gautham ^LU ; Zhu, Zhongyunshen ^LU and Wernersson, Lars-Erik ^LU (2024) In IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 10. p.8-12
- Contribution to journal › Article
Mark A 29.5 GHz Rectifier with 14.5 dB Dynamic Power Range for Energy Harvester Using Vertical Nanowire Tunnel FETs
Au, Ngoc Duc ^LU ; Sandberg, Marcus E. ^LU ; Rangasamy, Gautham ^LU ; Fhager, Lars Ohlsson ^LU and Wernersson, Lars Erik ^LU (2024) 19th European Microwave Integrated Circuits Conference, EuMIC 2024 p.415-418
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
Mark TFET Circuit Configurations Operating below 60 mV/dec
Rangasamy, Gautham ^LU ; Zhu, Zhongyunshen ^LU ; Fhager, Lars Ohlsson ^LU and Wernersson, Lars Erik ^LU (2024) In IEEE Transactions on Nanotechnology 23. p.441-447
- Contribution to journal › Article
2023
Mark High Current Density Vertical Nanowire TFETs With I₆₀ > 1 μ A/ μ m
Rangasamy, Gautham ^LU ; Zhu, Zhongyunshen ^LU and Wernersson, Lars-erik ^LU (2023) In IEEE Access 11. p.95692-95696
- Contribution to journal › Article
Mark g_m/I_d Analysis of vertical nanowire III–V TFETs
Rangasamy, Gautham ^LU ; Zhu, Zhongyunshen ^LU ; Ohlsson Fhager, Lars ^LU and Wernersson, Lars-Erik ^LU (2023) In Electronics Letters 59(18).
- Contribution to journal › Article
Mark Self-Heating in Gate-All-Around Vertical III-V InAs/InGaAs MOSFETs
Rangasamy, Gautham ^LU ; Ram, Mamidala Saketh ^LU ; Fhager, Lars Ohlsson ^LU and Wernersson, Lars Erik ^LU (2023) In IEEE Electron Device Letters 44(7). p.1212-1215
- Contribution to journal › Article
Mark Vertical III-V nanowire tunnel field-effect transistors : a circuit perspective
Rangasamy, Gautham ^LU (2023) In Series of licentiate and doctoral theses
- Thesis › Doctoral thesis (compilation)