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Mobility of near surface MOVPE grown InGaAs/InP quantum wells

Södergren, Lasse LU ; Garigapati, Navya Sri LU ; Borg, Mattias LU and Lind, Erik LU (2020) In Applied Physics Letters 117(1).
Abstract

In this work, we study the electron mobility of near surface metal organic vapor phase epitaxy-grown InGaAs quantum wells. We utilize Hall mobility measurements in conjunction with simulations to quantify the surface charge defect density. Buried quantum wells are limited by polar optical phonon scattering at room temperature. In contrast, the quantum wells directly at the surface are limited by remote charge impurity scattering from defects situated at the III-V/oxide interface or inside the oxide, showing a mobility of 1500 cm2/V s. Passivating the InGaAs surface by depositing an oxide reduces the amount of defects at the interface, increasing the mobility to 2600 cm2/V s.

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author
; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Applied Physics Letters
volume
117
issue
1
article number
013102
publisher
American Institute of Physics (AIP)
external identifiers
  • scopus:85087976560
ISSN
0003-6951
DOI
10.1063/5.0006530
language
English
LU publication?
yes
id
778368b3-15eb-43b6-8ea2-70a33b2b9778
date added to LUP
2020-07-26 16:47:03
date last changed
2020-07-29 11:15:50
@article{778368b3-15eb-43b6-8ea2-70a33b2b9778,
  abstract     = {<p>In this work, we study the electron mobility of near surface metal organic vapor phase epitaxy-grown InGaAs quantum wells. We utilize Hall mobility measurements in conjunction with simulations to quantify the surface charge defect density. Buried quantum wells are limited by polar optical phonon scattering at room temperature. In contrast, the quantum wells directly at the surface are limited by remote charge impurity scattering from defects situated at the III-V/oxide interface or inside the oxide, showing a mobility of 1500 cm2/V s. Passivating the InGaAs surface by depositing an oxide reduces the amount of defects at the interface, increasing the mobility to 2600 cm2/V s. </p>},
  author       = {Södergren, Lasse and Garigapati, Navya Sri and Borg, Mattias and Lind, Erik},
  issn         = {0003-6951},
  language     = {eng},
  month        = {07},
  number       = {1},
  publisher    = {American Institute of Physics (AIP)},
  series       = {Applied Physics Letters},
  title        = {Mobility of near surface MOVPE grown InGaAs/InP quantum wells},
  url          = {http://dx.doi.org/10.1063/5.0006530},
  doi          = {10.1063/5.0006530},
  volume       = {117},
  year         = {2020},
}