Mobility of near surface MOVPE grown InGaAs/InP quantum wells
(2020) In Applied Physics Letters 117(1).- Abstract
In this work, we study the electron mobility of near surface metal organic vapor phase epitaxy-grown InGaAs quantum wells. We utilize Hall mobility measurements in conjunction with simulations to quantify the surface charge defect density. Buried quantum wells are limited by polar optical phonon scattering at room temperature. In contrast, the quantum wells directly at the surface are limited by remote charge impurity scattering from defects situated at the III-V/oxide interface or inside the oxide, showing a mobility of 1500 cm2/V s. Passivating the InGaAs surface by depositing an oxide reduces the amount of defects at the interface, increasing the mobility to 2600 cm2/V s.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/778368b3-15eb-43b6-8ea2-70a33b2b9778
- author
- Södergren, Lasse LU ; Garigapati, Navya Sri LU ; Borg, Mattias LU and Lind, Erik LU
- organization
- publishing date
- 2020-07-06
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Applied Physics Letters
- volume
- 117
- issue
- 1
- article number
- 013102
- publisher
- American Institute of Physics (AIP)
- external identifiers
-
- scopus:85087976560
- ISSN
- 0003-6951
- DOI
- 10.1063/5.0006530
- language
- English
- LU publication?
- yes
- id
- 778368b3-15eb-43b6-8ea2-70a33b2b9778
- date added to LUP
- 2020-07-26 16:47:03
- date last changed
- 2024-08-08 23:29:03
@article{778368b3-15eb-43b6-8ea2-70a33b2b9778, abstract = {{<p>In this work, we study the electron mobility of near surface metal organic vapor phase epitaxy-grown InGaAs quantum wells. We utilize Hall mobility measurements in conjunction with simulations to quantify the surface charge defect density. Buried quantum wells are limited by polar optical phonon scattering at room temperature. In contrast, the quantum wells directly at the surface are limited by remote charge impurity scattering from defects situated at the III-V/oxide interface or inside the oxide, showing a mobility of 1500 cm2/V s. Passivating the InGaAs surface by depositing an oxide reduces the amount of defects at the interface, increasing the mobility to 2600 cm2/V s. </p>}}, author = {{Södergren, Lasse and Garigapati, Navya Sri and Borg, Mattias and Lind, Erik}}, issn = {{0003-6951}}, language = {{eng}}, month = {{07}}, number = {{1}}, publisher = {{American Institute of Physics (AIP)}}, series = {{Applied Physics Letters}}, title = {{Mobility of near surface MOVPE grown InGaAs/InP quantum wells}}, url = {{http://dx.doi.org/10.1063/5.0006530}}, doi = {{10.1063/5.0006530}}, volume = {{117}}, year = {{2020}}, }