Hydrogen plasma enhanced oxide removal on GaSb planar and nanowire surfaces
Liu, Yen-Po LU ; Yngman, Sofie LU ; Troian, Andrea LU ; D Acunto, Giulio LU ; Jönsson, Adam LU ; Svensson, Johannes LU ; Mikkelsen, Anders LU ; Wernersson, Lars-Erik LU and Timm, Rainer LU
(2022)
In Applied Surface Science
- Abstract
- Due to its high hole-mobility, GaSb is a highly promising candidate for high-speed p-channels in electronic devices. However, GaSb exhibits a comparably thick native oxide causing detrimental interface defects, which has been proven difficult to remove. Here we present full oxide removal from GaSb surfaces using effective hydrogen plasma cleaning, studied in-situ by synchrotron-based X-ray photoelectron spectroscopy under ultrahigh vacuum (UHV). GaSb nanowires turn out to be cleaned faster and more efficiently than planar substrates. Since the UHV conditions are not scalable for industrial sample processing, H-plasma cleaning is furthermore used as pre-treatment prior to atomic layer deposition (ALD) of a protective high-k layer to... (More)
- Due to its high hole-mobility, GaSb is a highly promising candidate for high-speed p-channels in electronic devices. However, GaSb exhibits a comparably thick native oxide causing detrimental interface defects, which has been proven difficult to remove. Here we present full oxide removal from GaSb surfaces using effective hydrogen plasma cleaning, studied in-situ by synchrotron-based X-ray photoelectron spectroscopy under ultrahigh vacuum (UHV). GaSb nanowires turn out to be cleaned faster and more efficiently than planar substrates. Since the UHV conditions are not scalable for industrial sample processing, H-plasma cleaning is furthermore used as pre-treatment prior to atomic layer deposition (ALD) of a protective high-k layer to demonstrate the use of the cleaning step in a more realistic fabrication situation. We observe a cleaning effect of the H-plasma even in the ALD environment, but we also find residual Ga- and Sb-oxides at the GaSb-high-k interface, which we attribute to re-oxidation of the cleaned surface. Our results indicate that an improved control of the ALD reactor vacuum environment could realize oxide- and defect-free interfaces in GaSb-based electronics. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/89b9aed8-caa6-4aa9-8fae-5dc2e3aa8aaa
- author
- Liu, Yen-Po
LU
; Yngman, Sofie
LU
; Troian, Andrea
LU
; D Acunto, Giulio
LU
; Jönsson, Adam
LU
; Svensson, Johannes
LU
; Mikkelsen, Anders
LU
; Wernersson, Lars-Erik
LU
and Timm, Rainer
LU
- organization
- publishing date
- 2022-04-15
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Applied Surface Science
- publisher
- Elsevier
- external identifiers
-
- scopus:85128312424
- ISSN
- 0169-4332
- DOI
- 10.1016/j.apsusc.2022.153336
- language
- English
- LU publication?
- yes
- id
- 89b9aed8-caa6-4aa9-8fae-5dc2e3aa8aaa
- date added to LUP
- 2022-04-28 21:37:56
- date last changed
- 2023-11-11 21:35:02
@article{89b9aed8-caa6-4aa9-8fae-5dc2e3aa8aaa,
abstract = {{Due to its high hole-mobility, GaSb is a highly promising candidate for high-speed p-channels in electronic devices. However, GaSb exhibits a comparably thick native oxide causing detrimental interface defects, which has been proven difficult to remove. Here we present full oxide removal from GaSb surfaces using effective hydrogen plasma cleaning, studied in-situ by synchrotron-based X-ray photoelectron spectroscopy under ultrahigh vacuum (UHV). GaSb nanowires turn out to be cleaned faster and more efficiently than planar substrates. Since the UHV conditions are not scalable for industrial sample processing, H-plasma cleaning is furthermore used as pre-treatment prior to atomic layer deposition (ALD) of a protective high-k layer to demonstrate the use of the cleaning step in a more realistic fabrication situation. We observe a cleaning effect of the H-plasma even in the ALD environment, but we also find residual Ga- and Sb-oxides at the GaSb-high-k interface, which we attribute to re-oxidation of the cleaned surface. Our results indicate that an improved control of the ALD reactor vacuum environment could realize oxide- and defect-free interfaces in GaSb-based electronics.}},
author = {{Liu, Yen-Po and Yngman, Sofie and Troian, Andrea and D Acunto, Giulio and Jönsson, Adam and Svensson, Johannes and Mikkelsen, Anders and Wernersson, Lars-Erik and Timm, Rainer}},
issn = {{0169-4332}},
language = {{eng}},
month = {{04}},
publisher = {{Elsevier}},
series = {{Applied Surface Science}},
title = {{Hydrogen plasma enhanced oxide removal on GaSb planar and nanowire surfaces}},
url = {{http://dx.doi.org/10.1016/j.apsusc.2022.153336}},
doi = {{10.1016/j.apsusc.2022.153336}},
year = {{2022}},
}