Fredrik Lindelöw (Former)

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2022
Mark Lateral III-V Nanowire MOSFETs in Low-Noise Amplifier Stages
Andric, Stefan ^LU ; Lindelow, Fredrik ^LU ; Fhager, Lars Ohlsson ^LU ; Lind, Erik ^LU and Wernersson, Lars Erik ^LU (2022) In IEEE Transactions on Microwave Theory and Techniques 70(2). p.1284-1291
- Contribution to journal › Article
2021
Mark Capacitance Scaling in In_0.71Ga_0.29As/InP MOSFETs with Self-Aligned a:Si Spacers
Garigapati, Navya S. ^LU ; Lindelow, Fredrik ^LU ; Sodergren, Lasse ^LU and Lind, Erik ^LU (2021) In IEEE Transactions on Electron Devices 68(8). p.3762-3767
- Contribution to journal › Article
2020
Mark Low temperature scanning tunneling microscopy and spectroscopy on laterally grown In_xGa_1-xAs nanowire devices
Liu, Yen Po ^LU ; Södergren, Lasse ^LU ; Mousavi, S. Fatemeh ^LU ; Liu, Yi ^LU ; Lindelöw, Fredrik ^LU ; Lind, Erik ^LU ; Timm, Rainer ^LU and Mikkelsen, Anders ^LU (2020) In Applied Physics Letters 117(16).
- Contribution to journal › Article
Mark III-V nanowire MOSFETs with novel self-limiting Λ-ridge spacers for RF applications
Lindelöw, Fredrik ^LU ; Sri Garigapati, Navya ^LU ; Södergren, Lasse ^LU ; Borg, Mattias ^LU and Lind, Erik ^LU (2020) In Semiconductor Science and Technology 35(6).
- Contribution to journal › Article
Mark III-V Nanowires for High-Speed Electronics
Lindelöw, Fredrik ^LU (2020) In Series of licentiate and doctoral theses 129.
- Thesis › Doctoral thesis (compilation)
2019
Mark Low-temperature back-end-of-line technology compatible with III-V nanowire MOSFETs
Andric, Stefan ^LU ; Ohlsson Fhager, Lars ^LU ; Lindelöw, Fredrik ^LU ; Kilpi, Olli Pekka ^LU and Wernersson, Lars Erik ^LU (2019) In Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics 37(6).
- Contribution to journal › Article
2017
Mark InGaAs tri-gate MOSFETs with record on-current
Zota, Cezar B. ^LU ; Lindelow, Fredrik ^LU ; Wernersson, Lars Erik ^LU and Lind, Erik ^LU (2017) 62nd IEEE International Electron Devices Meeting, IEDM 2016 p.1-4
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
Mark Gated Hall effect measurements on selectively grown InGaAs nanowires
Lindelöw, F. ^LU ; Zota, C. B. ^LU and Lind, E. ^LU (2017) In Nanotechnology 28(20).
- Contribution to journal › Article
Mark First InGaAs lateral nanowire MOSFET RF noise measurements and model
Ohlsson, Lars ^LU ; Lindelow, Fredrik ^LU ; Zota, Cezar B. ^LU ; Ohlrogge, Matthias ; Merkle, Thomas ; Wernersson, Lars Erik ^LU and Lind, Erik ^LU (2017) 75th Annual Device Research Conference, DRC 2017
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
2016
Mark Doping evaluation of InP nanowires for tandem junction solar cells
Lindelöw, Fredrik ^LU ; Heurlin, Magnus ^LU ; Otnes, Gaute ^LU ; Dagyte, Vilgaile ^LU ; Lindgren, David ^LU ; Hultin, Olof ^LU ; Storm, Kristian ^LU ; Samuelson, Lars ^LU and Borgström, Magnus ^LU (2016) In Nanotechnology 27(6).
- Contribution to journal › Article

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