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Tuning oxygen vacancies and resistive switching properties in ultra-thin HfO2 RRAM via TiN bottom electrode and interface engineering

Yong, Zhihua LU ; Persson, Karl-Magnus LU ; Mamidala, Saketh, Ram LU orcid ; D Acunto, Giulio LU ; Liu, Yi LU ; Benter, Sandra LU ; Pan, Jisheng ; Li, Zheshen ; Borg, Mattias LU orcid and Mikkelsen, Anders LU , et al. (2021) In Applied Surface Science 551.
Abstract
Resistive random access memory (RRAM) technologies based on non-volatile resistive filament redox switching oxides have the potential of drastically improving the performance of future mass-storage solutions. However, the physico-chemical properties of the TiN bottom metal electrode (BME) can significantly alter the resistive switching (RS) behavior of the oxygen-vacancy RRAM devices, yet the correlation between RS and the physico-chemical properties of TiN and HfOx/TiN interface remains unclear. Here, we establish this particular correlation via detailed material and electrical characterization for the purpose of achieving further performance enhancement of the stack integration. Two types of RRAM stacks were fabricated where the TiN BME... (More)
Resistive random access memory (RRAM) technologies based on non-volatile resistive filament redox switching oxides have the potential of drastically improving the performance of future mass-storage solutions. However, the physico-chemical properties of the TiN bottom metal electrode (BME) can significantly alter the resistive switching (RS) behavior of the oxygen-vacancy RRAM devices, yet the correlation between RS and the physico-chemical properties of TiN and HfOx/TiN interface remains unclear. Here, we establish this particular correlation via detailed material and electrical characterization for the purpose of achieving further performance enhancement of the stack integration. Two types of RRAM stacks were fabricated where the TiN BME was fabricated by physical vapor deposition (PVD) and atomic layer deposition (ALD), respectively. The HfOx layer in HfOx/PVD-TiN is more oxygen deficient than that of the HfOx/ALD-TiN because of more defective PVD-TiN and probably because pristine ALD-TiN has a thicker TiO2 overlayer. Higher concentration of oxygen vacancies induces a larger magnitude of band bending at the HfOx/PVD-TiN interface and leads to the formation of a higher Schottky barrier. Pulsed endurance measurements of up to 106 switches, with 10 μA ± 1.0 V pulses, demonstrate the potential of the studied ultra-thin-HfOx/TiN device stack for dense, large scale, and low-power memory integration. (Less)
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organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
RRAM, Resistive Switching, Hafnium oxide, Titanium Nitride, XPS, Band Bending
in
Applied Surface Science
volume
551
article number
149386
publisher
Elsevier
external identifiers
  • scopus:85102103282
ISSN
1873-5584
DOI
10.1016/j.apsusc.2021.149386
language
English
LU publication?
yes
id
0f8322e5-411f-4e01-947d-5b18191b2495
date added to LUP
2021-03-12 20:21:27
date last changed
2023-11-21 00:35:21
@article{0f8322e5-411f-4e01-947d-5b18191b2495,
  abstract     = {{Resistive random access memory (RRAM) technologies based on non-volatile resistive filament redox switching oxides have the potential of drastically improving the performance of future mass-storage solutions. However, the physico-chemical properties of the TiN bottom metal electrode (BME) can significantly alter the resistive switching (RS) behavior of the oxygen-vacancy RRAM devices, yet the correlation between RS and the physico-chemical properties of TiN and HfOx/TiN interface remains unclear. Here, we establish this particular correlation via detailed material and electrical characterization for the purpose of achieving further performance enhancement of the stack integration. Two types of RRAM stacks were fabricated where the TiN BME was fabricated by physical vapor deposition (PVD) and atomic layer deposition (ALD), respectively. The HfOx layer in HfOx/PVD-TiN is more oxygen deficient than that of the HfOx/ALD-TiN because of more defective PVD-TiN and probably because pristine ALD-TiN has a thicker TiO<sub>2</sub> overlayer. Higher concentration of oxygen vacancies induces a larger magnitude of band bending at the HfOx/PVD-TiN interface and leads to the formation of a higher Schottky barrier. Pulsed endurance measurements of up to 10<sup>6</sup> switches, with 10 μA ± 1.0 V pulses, demonstrate the potential of the studied ultra-thin-HfOx/TiN device stack for dense, large scale, and low-power memory integration.}},
  author       = {{Yong, Zhihua and Persson, Karl-Magnus and Mamidala, Saketh, Ram and D Acunto, Giulio and Liu, Yi and Benter, Sandra and Pan, Jisheng and Li, Zheshen and Borg, Mattias and Mikkelsen, Anders and Wernersson, Lars-Erik and Timm, Rainer}},
  issn         = {{1873-5584}},
  keywords     = {{RRAM; Resistive Switching; Hafnium oxide; Titanium Nitride; XPS; Band Bending}},
  language     = {{eng}},
  month        = {{03}},
  publisher    = {{Elsevier}},
  series       = {{Applied Surface Science}},
  title        = {{Tuning oxygen vacancies and resistive switching properties in ultra-thin HfO<sub>2</sub> RRAM via TiN bottom electrode and interface engineering}},
  url          = {{http://dx.doi.org/10.1016/j.apsusc.2021.149386}},
  doi          = {{10.1016/j.apsusc.2021.149386}},
  volume       = {{551}},
  year         = {{2021}},
}