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Impact of Band-Tails on the Subthreshold Swing of III-V Tunnel Field-Effect Transistor

Memisevic, Elvedin LU ; Lind, Erik LU ; Hellenbrand, Markus LU ; Svensson, Johannes LU and Wernersson, Lars-Erik LU (2017) In IEEE Electron Device Letters
Abstract
We present a simple model to evaluate the sharpness of the band edges for tunnel field-effect transistors by comparing the subthreshold swing and the conductance in the negative differential resistance region. This model is evaluated using experimental data from InAs/InGaAsSb/GaSb nanowire tunnel-field effect transistors with the ability to reach a subthreshold swing well below the thermal limit. A device with the lowest subthreshold swing, 43 mV/decade at 0.1 V, exhibits also the sharpest band-edge decay parameter E0 of 43.5 mV although in most cases the S<<E0. The model explains the observed temperature dependence of the subthreshold swing.
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author
organization
publishing date
type
Contribution to journal
publication status
in press
subject
in
IEEE Electron Device Letters
publisher
IEEE--Institute of Electrical and Electronics Engineers Inc.
external identifiers
  • wos:000417175300004
ISSN
0741-3106
DOI
10.1109/LED.2017.2764873
language
English
LU publication?
yes
id
2eb5bbb6-b11b-4e96-996f-5bd0d22d8887
date added to LUP
2017-10-22 20:53:27
date last changed
2018-01-16 13:23:49
@article{2eb5bbb6-b11b-4e96-996f-5bd0d22d8887,
  abstract     = {We present a simple model to evaluate the sharpness of the band edges for tunnel field-effect transistors by comparing the subthreshold swing and the conductance in the negative differential resistance region. This model is evaluated using experimental data from InAs/InGaAsSb/GaSb nanowire tunnel-field effect transistors with the ability to reach a subthreshold swing well below the thermal limit. A device with the lowest subthreshold swing, 43 mV/decade at 0.1 V, exhibits also the sharpest band-edge decay parameter E0 of 43.5 mV although in most cases the S&lt;&lt;E0. The model explains the observed temperature dependence of the subthreshold swing.},
  author       = {Memisevic, Elvedin and Lind, Erik and Hellenbrand, Markus and Svensson, Johannes and Wernersson, Lars-Erik},
  issn         = {0741-3106},
  language     = {eng},
  publisher    = {IEEE--Institute of Electrical and Electronics Engineers Inc.},
  series       = {IEEE Electron Device Letters},
  title        = {Impact of Band-Tails on the Subthreshold Swing of III-V Tunnel Field-Effect Transistor},
  url          = {http://dx.doi.org/10.1109/LED.2017.2764873},
  year         = {2017},
}