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Impact of Band-Tails on the Subthreshold Swing of III-V Tunnel Field-Effect Transistor

Memisevic, Elvedin LU ; Lind, Erik LU orcid ; Hellenbrand, Markus LU ; Svensson, Johannes LU and Wernersson, Lars-Erik LU (2017) In IEEE Electron Device Letters p.1661-1664
Abstract
We present a simple model to evaluate the sharpness of the band edges for tunnel field-effect transistors by comparing the subthreshold swing and the conductance in the negative differential resistance region. This model is evaluated using experimental data from InAs/InGaAsSb/GaSb nanowire tunnel-field effect transistors with the ability to reach a subthreshold swing well below the thermal limit. A device with the lowest subthreshold swing, 43 mV/decade at 0.1 V, exhibits also the sharpest band-edge decay parameter E0 of 43.5 mV although in most cases the S<<E0. The model explains the observed temperature dependence of the subthreshold swing.
Please use this url to cite or link to this publication:
author
; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
IEEE Electron Device Letters
pages
1661 - 1664
publisher
IEEE - Institute of Electrical and Electronics Engineers Inc.
external identifiers
  • wos:000417175300004
  • scopus:85040548287
ISSN
0741-3106
DOI
10.1109/LED.2017.2764873
language
English
LU publication?
yes
id
2eb5bbb6-b11b-4e96-996f-5bd0d22d8887
date added to LUP
2017-10-22 20:53:27
date last changed
2025-10-14 08:58:07
@article{2eb5bbb6-b11b-4e96-996f-5bd0d22d8887,
  abstract     = {{We present a simple model to evaluate the sharpness of the band edges for tunnel field-effect transistors by comparing the subthreshold swing and the conductance in the negative differential resistance region. This model is evaluated using experimental data from InAs/InGaAsSb/GaSb nanowire tunnel-field effect transistors with the ability to reach a subthreshold swing well below the thermal limit. A device with the lowest subthreshold swing, 43 mV/decade at 0.1 V, exhibits also the sharpest band-edge decay parameter E0 of 43.5 mV although in most cases the S&lt;&lt;E0. The model explains the observed temperature dependence of the subthreshold swing.}},
  author       = {{Memisevic, Elvedin and Lind, Erik and Hellenbrand, Markus and Svensson, Johannes and Wernersson, Lars-Erik}},
  issn         = {{0741-3106}},
  language     = {{eng}},
  pages        = {{1661--1664}},
  publisher    = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}},
  series       = {{IEEE Electron Device Letters}},
  title        = {{Impact of Band-Tails on the Subthreshold Swing of III-V Tunnel Field-Effect Transistor}},
  url          = {{https://lup.lub.lu.se/search/files/47441018/InAs_InGaAsSb_GaSb_TFETs_Memisevic.pdf}},
  doi          = {{10.1109/LED.2017.2764873}},
  year         = {{2017}},
}