III-V Nanowire MOSFETs : RF-Properties and Applications
(2020) 2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2020- Abstract
III-V MOSFETs provide improved electrostatic control at scaled gate lengths combined with a considerable reduction in gate leakage current. Following the natural transistor evolution, we investigate vertical III-V nanowire MOSFETs and fabricate MOSFETs with gm>3 S/mm integrated on Si substrates. Careful investigations of the dynamic properties show high MSG-value of 14.5 dB at 20 GHz with a small-signal III-V MOSFET model including also trap response related to defects within the high-k film. From 1/f-investigations we determine the distribution of defects in the gate-stack and find a local minimum around the conduction band edge with a Nbt between mid-1018 and mid-1019 cm-3 eV-1. The III-V nanowire MOSFETs are used to design D-band... (More)
III-V MOSFETs provide improved electrostatic control at scaled gate lengths combined with a considerable reduction in gate leakage current. Following the natural transistor evolution, we investigate vertical III-V nanowire MOSFETs and fabricate MOSFETs with gm>3 S/mm integrated on Si substrates. Careful investigations of the dynamic properties show high MSG-value of 14.5 dB at 20 GHz with a small-signal III-V MOSFET model including also trap response related to defects within the high-k film. From 1/f-investigations we determine the distribution of defects in the gate-stack and find a local minimum around the conduction band edge with a Nbt between mid-1018 and mid-1019 cm-3 eV-1. The III-V nanowire MOSFETs are used to design D-band LNAs with competitive performance. They also show promise for integration of pMOSFETs, TFETs, and RRAM elements opening a wide range of applications.
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- author
- Wernersson, Lars Erik LU
- organization
- publishing date
- 2020-11-16
- type
- Chapter in Book/Report/Conference proceeding
- publication status
- published
- subject
- keywords
- High-frequency characteristics, III-V MOSFETs, III-V Nanowires
- host publication
- 2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2020
- article number
- 9392932
- publisher
- IEEE - Institute of Electrical and Electronics Engineers Inc.
- conference name
- 2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2020
- conference location
- Monterey, United States
- conference dates
- 2020-11-16 - 2020-11-19
- external identifiers
-
- scopus:85104622717
- ISBN
- 9781728197494
- DOI
- 10.1109/BCICTS48439.2020.9392932
- language
- English
- LU publication?
- yes
- id
- b61d7d7d-a823-4b00-94d3-6e752c11e0d1
- date added to LUP
- 2021-05-04 11:34:17
- date last changed
- 2022-04-19 06:10:15
@inproceedings{b61d7d7d-a823-4b00-94d3-6e752c11e0d1, abstract = {{<p>III-V MOSFETs provide improved electrostatic control at scaled gate lengths combined with a considerable reduction in gate leakage current. Following the natural transistor evolution, we investigate vertical III-V nanowire MOSFETs and fabricate MOSFETs with gm>3 S/mm integrated on Si substrates. Careful investigations of the dynamic properties show high MSG-value of 14.5 dB at 20 GHz with a small-signal III-V MOSFET model including also trap response related to defects within the high-k film. From 1/f-investigations we determine the distribution of defects in the gate-stack and find a local minimum around the conduction band edge with a Nbt between mid-1018 and mid-1019 cm-3 eV-1. The III-V nanowire MOSFETs are used to design D-band LNAs with competitive performance. They also show promise for integration of pMOSFETs, TFETs, and RRAM elements opening a wide range of applications.</p>}}, author = {{Wernersson, Lars Erik}}, booktitle = {{2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2020}}, isbn = {{9781728197494}}, keywords = {{High-frequency characteristics; III-V MOSFETs; III-V Nanowires}}, language = {{eng}}, month = {{11}}, publisher = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}}, title = {{III-V Nanowire MOSFETs : RF-Properties and Applications}}, url = {{http://dx.doi.org/10.1109/BCICTS48439.2020.9392932}}, doi = {{10.1109/BCICTS48439.2020.9392932}}, year = {{2020}}, }