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III-V Nanowire MOSFETs : RF-Properties and Applications

Wernersson, Lars Erik LU (2020) 2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2020
Abstract

III-V MOSFETs provide improved electrostatic control at scaled gate lengths combined with a considerable reduction in gate leakage current. Following the natural transistor evolution, we investigate vertical III-V nanowire MOSFETs and fabricate MOSFETs with gm>3 S/mm integrated on Si substrates. Careful investigations of the dynamic properties show high MSG-value of 14.5 dB at 20 GHz with a small-signal III-V MOSFET model including also trap response related to defects within the high-k film. From 1/f-investigations we determine the distribution of defects in the gate-stack and find a local minimum around the conduction band edge with a Nbt between mid-1018 and mid-1019 cm-3 eV-1. The III-V nanowire MOSFETs are used to design D-band... (More)

III-V MOSFETs provide improved electrostatic control at scaled gate lengths combined with a considerable reduction in gate leakage current. Following the natural transistor evolution, we investigate vertical III-V nanowire MOSFETs and fabricate MOSFETs with gm>3 S/mm integrated on Si substrates. Careful investigations of the dynamic properties show high MSG-value of 14.5 dB at 20 GHz with a small-signal III-V MOSFET model including also trap response related to defects within the high-k film. From 1/f-investigations we determine the distribution of defects in the gate-stack and find a local minimum around the conduction band edge with a Nbt between mid-1018 and mid-1019 cm-3 eV-1. The III-V nanowire MOSFETs are used to design D-band LNAs with competitive performance. They also show promise for integration of pMOSFETs, TFETs, and RRAM elements opening a wide range of applications.

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Please use this url to cite or link to this publication:
author
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
keywords
High-frequency characteristics, III-V MOSFETs, III-V Nanowires
host publication
2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2020
article number
9392932
publisher
IEEE - Institute of Electrical and Electronics Engineers Inc.
conference name
2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2020
conference location
Monterey, United States
conference dates
2020-11-16 - 2020-11-19
external identifiers
  • scopus:85104622717
ISBN
9781728197494
DOI
10.1109/BCICTS48439.2020.9392932
language
English
LU publication?
yes
id
b61d7d7d-a823-4b00-94d3-6e752c11e0d1
date added to LUP
2021-05-04 11:34:17
date last changed
2022-04-19 06:10:15
@inproceedings{b61d7d7d-a823-4b00-94d3-6e752c11e0d1,
  abstract     = {{<p>III-V MOSFETs provide improved electrostatic control at scaled gate lengths combined with a considerable reduction in gate leakage current. Following the natural transistor evolution, we investigate vertical III-V nanowire MOSFETs and fabricate MOSFETs with gm&gt;3 S/mm integrated on Si substrates. Careful investigations of the dynamic properties show high MSG-value of 14.5 dB at 20 GHz with a small-signal III-V MOSFET model including also trap response related to defects within the high-k film. From 1/f-investigations we determine the distribution of defects in the gate-stack and find a local minimum around the conduction band edge with a Nbt between mid-1018 and mid-1019 cm-3 eV-1. The III-V nanowire MOSFETs are used to design D-band LNAs with competitive performance. They also show promise for integration of pMOSFETs, TFETs, and RRAM elements opening a wide range of applications.</p>}},
  author       = {{Wernersson, Lars Erik}},
  booktitle    = {{2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2020}},
  isbn         = {{9781728197494}},
  keywords     = {{High-frequency characteristics; III-V MOSFETs; III-V Nanowires}},
  language     = {{eng}},
  month        = {{11}},
  publisher    = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}},
  title        = {{III-V Nanowire MOSFETs : RF-Properties and Applications}},
  url          = {{http://dx.doi.org/10.1109/BCICTS48439.2020.9392932}},
  doi          = {{10.1109/BCICTS48439.2020.9392932}},
  year         = {{2020}},
}