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- 2019
-
Mark
Vertical Gate-All-Around Nanowire GaSb-InAs Core-Shell n-Type Tunnel FETs
(
- Contribution to journal › Article
-
Mark
Core-shell tfet developments and tfet limitations
2019) 2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2016
-
Mark
InAs nanowire GAA n-MOSFETs with 12-15 nm diameter
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2014
-
Mark
High-k dielectrics on (100) and (110) n-InAs: Physical and electrical characterizations
(
- Contribution to journal › Article
- 2013
-
Mark
InAs hole inversion and bandgap interface state density of 2 x 10(11) cm(-2) eV(-1) at HfO2/InAs interfaces
(
- Contribution to journal › Article