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InAs hole inversion and bandgap interface state density of 2 x 10(11) cm(-2) eV(-1) at HfO2/InAs interfaces

Wang, C. H. ; Wang, S. W. ; Doornbos, G. ; Astromskas, G. ; Bhuwalka, K. ; Contreras-Guerrero, R. ; Edirisooriya, M. ; Rojas-Ramirez, J. S. ; Vellianitis, G. and Oxland, R. , et al. (2013) In Applied Physics Letters 103(14).
Abstract
High-k/InAs interfaces have been manufactured using InAs surface oxygen termination and low temperature atomic layer deposition of HfO2. Capacitance-voltage (C-V) curves revert to essentially classical shape revealing mobile carrier response in accumulation and depletion, hole inversion is observed, and predicted minority carrier response frequency in the hundred kHz range is experimentally confirmed; reference samples using conventional techniques show a trap dominated capacitance response. C-V curves have been fitted using advanced models including nonparabolicity and Fermi-Dirac distribution. For an equivalent oxide thickness of 1.3 nm, an interface state density D-it = 2.2 x 10(11) cm(-2) eV(-1) has been obtained throughout the InAs... (More)
High-k/InAs interfaces have been manufactured using InAs surface oxygen termination and low temperature atomic layer deposition of HfO2. Capacitance-voltage (C-V) curves revert to essentially classical shape revealing mobile carrier response in accumulation and depletion, hole inversion is observed, and predicted minority carrier response frequency in the hundred kHz range is experimentally confirmed; reference samples using conventional techniques show a trap dominated capacitance response. C-V curves have been fitted using advanced models including nonparabolicity and Fermi-Dirac distribution. For an equivalent oxide thickness of 1.3 nm, an interface state density D-it = 2.2 x 10(11) cm(-2) eV(-1) has been obtained throughout the InAs bandgap. (C) 2013 AIP Publishing LLC. (Less)
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publication status
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Applied Physics Letters
volume
103
issue
14
article number
143510
publisher
AIP Publishing LLC
external identifiers
  • wos:000325488500125
  • scopus:84885674078
ISSN
0003-6951
DOI
10.1063/1.4820477
language
English
LU publication?
yes
id
1b8fca44-bec9-4913-b412-6ea61b7f95f7 (old id 4166477)
date added to LUP
2016-04-01 10:40:48
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2020-01-12 05:02:15
@article{1b8fca44-bec9-4913-b412-6ea61b7f95f7,
  abstract     = {High-k/InAs interfaces have been manufactured using InAs surface oxygen termination and low temperature atomic layer deposition of HfO2. Capacitance-voltage (C-V) curves revert to essentially classical shape revealing mobile carrier response in accumulation and depletion, hole inversion is observed, and predicted minority carrier response frequency in the hundred kHz range is experimentally confirmed; reference samples using conventional techniques show a trap dominated capacitance response. C-V curves have been fitted using advanced models including nonparabolicity and Fermi-Dirac distribution. For an equivalent oxide thickness of 1.3 nm, an interface state density D-it = 2.2 x 10(11) cm(-2) eV(-1) has been obtained throughout the InAs bandgap. (C) 2013 AIP Publishing LLC.},
  author       = {Wang, C. H. and Wang, S. W. and Doornbos, G. and Astromskas, G. and Bhuwalka, K. and Contreras-Guerrero, R. and Edirisooriya, M. and Rojas-Ramirez, J. S. and Vellianitis, G. and Oxland, R. and Holland, M. C. and Hsieh, C. H. and Ramvall, Peter and Lind, Erik and Hsu, W. C. and Wernersson, Lars-Erik and Droopad, R. and Passlack, M. and Diaz, C. H.},
  issn         = {0003-6951},
  language     = {eng},
  number       = {14},
  publisher    = {AIP Publishing LLC},
  series       = {Applied Physics Letters},
  title        = {InAs hole inversion and bandgap interface state density of 2 x 10(11) cm(-2) eV(-1) at HfO2/InAs interfaces},
  url          = {http://dx.doi.org/10.1063/1.4820477},
  doi          = {10.1063/1.4820477},
  volume       = {103},
  year         = {2013},
}