InAs hole inversion and bandgap interface state density of 2 x 10(11) cm(-2) eV(-1) at HfO2/InAs interfaces
(2013) In Applied Physics Letters 103(14).- Abstract
- High-k/InAs interfaces have been manufactured using InAs surface oxygen termination and low temperature atomic layer deposition of HfO2. Capacitance-voltage (C-V) curves revert to essentially classical shape revealing mobile carrier response in accumulation and depletion, hole inversion is observed, and predicted minority carrier response frequency in the hundred kHz range is experimentally confirmed; reference samples using conventional techniques show a trap dominated capacitance response. C-V curves have been fitted using advanced models including nonparabolicity and Fermi-Dirac distribution. For an equivalent oxide thickness of 1.3 nm, an interface state density D-it = 2.2 x 10(11) cm(-2) eV(-1) has been obtained throughout the InAs... (More)
- High-k/InAs interfaces have been manufactured using InAs surface oxygen termination and low temperature atomic layer deposition of HfO2. Capacitance-voltage (C-V) curves revert to essentially classical shape revealing mobile carrier response in accumulation and depletion, hole inversion is observed, and predicted minority carrier response frequency in the hundred kHz range is experimentally confirmed; reference samples using conventional techniques show a trap dominated capacitance response. C-V curves have been fitted using advanced models including nonparabolicity and Fermi-Dirac distribution. For an equivalent oxide thickness of 1.3 nm, an interface state density D-it = 2.2 x 10(11) cm(-2) eV(-1) has been obtained throughout the InAs bandgap. (C) 2013 AIP Publishing LLC. (Less)
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- author
- organization
- publishing date
- 2013
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Applied Physics Letters
- volume
- 103
- issue
- 14
- article number
- 143510
- publisher
- American Institute of Physics (AIP)
- external identifiers
-
- wos:000325488500125
- scopus:84885674078
- ISSN
- 0003-6951
- DOI
- 10.1063/1.4820477
- language
- English
- LU publication?
- yes
- id
- 1b8fca44-bec9-4913-b412-6ea61b7f95f7 (old id 4166477)
- date added to LUP
- 2016-04-01 10:40:48
- date last changed
- 2023-08-31 08:37:23
@article{1b8fca44-bec9-4913-b412-6ea61b7f95f7,
abstract = {{High-k/InAs interfaces have been manufactured using InAs surface oxygen termination and low temperature atomic layer deposition of HfO2. Capacitance-voltage (C-V) curves revert to essentially classical shape revealing mobile carrier response in accumulation and depletion, hole inversion is observed, and predicted minority carrier response frequency in the hundred kHz range is experimentally confirmed; reference samples using conventional techniques show a trap dominated capacitance response. C-V curves have been fitted using advanced models including nonparabolicity and Fermi-Dirac distribution. For an equivalent oxide thickness of 1.3 nm, an interface state density D-it = 2.2 x 10(11) cm(-2) eV(-1) has been obtained throughout the InAs bandgap. (C) 2013 AIP Publishing LLC.}},
author = {{Wang, C. H. and Wang, S. W. and Doornbos, G. and Astromskas, G. and Bhuwalka, K. and Contreras-Guerrero, R. and Edirisooriya, M. and Rojas-Ramirez, J. S. and Vellianitis, G. and Oxland, R. and Holland, M. C. and Hsieh, C. H. and Ramvall, Peter and Lind, Erik and Hsu, W. C. and Wernersson, Lars-Erik and Droopad, R. and Passlack, M. and Diaz, C. H.}},
issn = {{0003-6951}},
language = {{eng}},
number = {{14}},
publisher = {{American Institute of Physics (AIP)}},
series = {{Applied Physics Letters}},
title = {{InAs hole inversion and bandgap interface state density of 2 x 10(11) cm(-2) eV(-1) at HfO2/InAs interfaces}},
url = {{http://dx.doi.org/10.1063/1.4820477}},
doi = {{10.1063/1.4820477}},
volume = {{103}},
year = {{2013}},
}