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InAs nanowire GAA n-MOSFETs with 12-15 nm diameter

Vasen, T.; Ramvall, P.; Afzalian, A.; Thelander, C. LU ; Dick, K. A. LU ; Holland, M.; Doornbos, G.; Wang, S. W.; Oxland, R. and Vellianitis, G., et al. (2016) 36th IEEE Symposium on VLSI Technology, VLSI Technology 2016 In 2016 IEEE Symposium on VLSI Technology, VLSI Technology 2016 2016-September.
Abstract

InAs nanowires (NW) grown by MOCVD with diameter d as small as 10 nm and gate-All-Around (GAA) MOSFETs with d = 12-15 nm are demonstrated. Ion = 314 μA/μm, and Ssat =68 mV/dec was achieved at Vdd = 0.5 V (Ioff = 0.1 μA/μm). Highest gm measured is 2693 μS/μm. Device performance is enabled by small diameter and optimized high-k/InAs gate stack process. Device performance tradeoffs between gm, Ron, and Imin are discussed.

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type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
in
2016 IEEE Symposium on VLSI Technology, VLSI Technology 2016
volume
2016-September
publisher
Institute of Electrical and Electronics Engineers Inc.
conference name
36th IEEE Symposium on VLSI Technology, VLSI Technology 2016
external identifiers
  • scopus:84991011523
ISBN
9781509006373
DOI
10.1109/VLSIT.2016.7573417
language
English
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yes
id
febeb38a-9d9c-4842-8656-743961e7a0af
date added to LUP
2016-11-03 07:42:59
date last changed
2017-10-01 05:25:15
@inproceedings{febeb38a-9d9c-4842-8656-743961e7a0af,
  abstract     = {<p>InAs nanowires (NW) grown by MOCVD with diameter d as small as 10 nm and gate-All-Around (GAA) MOSFETs with d = 12-15 nm are demonstrated. I<sub>on</sub> = 314 μA/μm, and S<sub>sat</sub> =68 mV/dec was achieved at V<sub>dd</sub> = 0.5 V (I<sub>off</sub> = 0.1 μA/μm). Highest g<sub>m</sub> measured is 2693 μS/μm. Device performance is enabled by small diameter and optimized high-k/InAs gate stack process. Device performance tradeoffs between g<sub>m</sub>, R<sub>on</sub>, and I<sub>min</sub> are discussed.</p>},
  author       = {Vasen, T. and Ramvall, P. and Afzalian, A. and Thelander, C. and Dick, K. A. and Holland, M. and Doornbos, G. and Wang, S. W. and Oxland, R. and Vellianitis, G. and Van Dal, M. J H and Duriez, B. and Ramirez, J. R. and Droopad, R. and Wernersson, L. E. and Samuelson, L. and Chen, T. K. and Yeo, Y. C. and Passlack, M.},
  booktitle    = {2016 IEEE Symposium on VLSI Technology, VLSI Technology 2016},
  isbn         = {9781509006373},
  language     = {eng},
  month        = {09},
  publisher    = {Institute of Electrical and Electronics Engineers Inc.},
  title        = {InAs nanowire GAA n-MOSFETs with 12-15 nm diameter},
  url          = {http://dx.doi.org/10.1109/VLSIT.2016.7573417},
  volume       = {2016-September},
  year         = {2016},
}