Peter Ramvall (Former)
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- 2019
-
Mark
Vertical Gate-All-Around Nanowire GaSb-InAs Core-Shell n-Type Tunnel FETs
(
- Contribution to journal › Article
-
Mark
Core-shell tfet developments and tfet limitations
2019) 2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2014
-
Mark
High-k dielectrics on (100) and (110) n-InAs: Physical and electrical characterizations
(
- Contribution to journal › Article
- 2013
-
Mark
MOVPE-grownInAs/AlAs0.16Sb0.84/InAs and InAs/AlAs0.16Sb0.84/GaSb heterostructures
(
- Contribution to journal › Article
-
Mark
InAs hole inversion and bandgap interface state density of 2 x 10(11) cm(-2) eV(-1) at HfO2/InAs interfaces
(
- Contribution to journal › Article
- 2010
-
Mark
In Situ Etching for Total Control Over Axial and Radial Nanowire Growth
(
- Contribution to journal › Article
- 2008
-
Mark
Precursor evaluation for in situ InP nanowire doping
(
- Contribution to journal › Article
- 1996
-
Mark
Electron Transport in Low Dimensional Systems
1996)(
- Thesis › Doctoral thesis (compilation)