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MOVPE-grownInAs/AlAs0.16Sb0.84/InAs and InAs/AlAs0.16Sb0.84/GaSb heterostructures

Ramvall, Peter LU ; Wang, C.H. ; Astromskas, Gvidas ; Vellianitis, Georgios ; Holland, Martin ; Droopad, Ravi ; Samuelson, Lars LU ; Wernersson, Lars-Erik LU ; Paslack, Matthias and Diaz, C.H. (2013) In Journal of Crystal Growth 374. p.43-48
Abstract
We demonstrate MOVPE-growth of InAs/AlAs0.16Sb0.84/GaSb and InAs/AlAs0.16Sb0.84/InAs heterostructures of excellent quality as observed by transmission electron microscopy and x-ray diffraction 2-theta-omega and rocking curve scans with full width at half maximum routinely below 100 arcsec. Key points regarding interface control for heteroepitaxial nucleation are reviewed and the choice of suitable precursors to minimize the incorporation of C and O are discussed.
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; ; ; ; ; ; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
A1. Crystal structure, A3. Metalorganic chemical vapor deposition, A3. Organometallic vapor phase epitaxy, B1. Nanomaterials, B1. Antimonides, B3. Heterojunction semiconductor devices.
in
Journal of Crystal Growth
volume
374
pages
43 - 48
publisher
Elsevier
external identifiers
  • wos:000320585500008
  • scopus:84877296139
ISSN
0022-0248
DOI
10.1016/j.jcrysgro.2013.03.044
language
English
LU publication?
yes
id
0504f422-1b82-452f-bc76-e6faf5482320 (old id 3735420)
alternative location
http://www.sciencedirect.com/science/article/pii/S0022024813002339
date added to LUP
2016-04-01 13:06:32
date last changed
2023-09-16 19:18:40
@article{0504f422-1b82-452f-bc76-e6faf5482320,
  abstract     = {{We demonstrate MOVPE-growth of InAs/AlAs0.16Sb0.84/GaSb and InAs/AlAs0.16Sb0.84/InAs heterostructures of excellent quality as observed by transmission electron microscopy and x-ray diffraction 2-theta-omega and rocking curve scans with full width at half maximum routinely below 100 arcsec. Key points regarding interface control for heteroepitaxial nucleation are reviewed and the choice of suitable precursors to minimize the incorporation of C and O are discussed.}},
  author       = {{Ramvall, Peter and Wang, C.H. and Astromskas, Gvidas and Vellianitis, Georgios and Holland, Martin and Droopad, Ravi and Samuelson, Lars and Wernersson, Lars-Erik and Paslack, Matthias and Diaz, C.H.}},
  issn         = {{0022-0248}},
  keywords     = {{A1. Crystal structure; A3. Metalorganic chemical vapor deposition; A3. Organometallic vapor phase epitaxy; B1. Nanomaterials; B1. Antimonides; B3. Heterojunction semiconductor devices.}},
  language     = {{eng}},
  pages        = {{43--48}},
  publisher    = {{Elsevier}},
  series       = {{Journal of Crystal Growth}},
  title        = {{MOVPE-grownInAs/AlAs0.16Sb0.84/InAs and InAs/AlAs0.16Sb0.84/GaSb heterostructures}},
  url          = {{https://lup.lub.lu.se/search/files/3164131/3735647.pdf}},
  doi          = {{10.1016/j.jcrysgro.2013.03.044}},
  volume       = {{374}},
  year         = {{2013}},
}