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Precursor evaluation for in situ InP nanowire doping

Borgström, Magnus LU orcid ; Norberg, E. ; Wickert, P. ; Nilsson, H. A. ; Trägårdh, Johanna LU ; Dick Thelander, Kimberly LU ; Statkute, G. ; Ramvall, Peter LU ; Deppert, Knut LU orcid and Samuelson, Lars LU (2008) In Nanotechnology 19(44).
Abstract
The use of tetraethyltin (TESn) and dimethylzinc (DMZn) as in situ n- and p-dopant precursors during particle-assisted growth of InP nanowires is reported. Gate voltage dependent transport measurements demonstrate that the nanowires can be predictably synthesized as either n- or p-type. These doped nanowires can be characterized based on their electric field response and we find that n- type doping scales over a range from 10(17) to 10(19) cm(-3) with increasing input TESn dopant molar fraction. On the other hand, the p-type doping using DMZn saturates at low levels, probably related to a strong increase in nanowire growth rate with increasing DMZn molar fractions. By optimizing growth conditions with respect to tapering, axial... (More)
The use of tetraethyltin (TESn) and dimethylzinc (DMZn) as in situ n- and p-dopant precursors during particle-assisted growth of InP nanowires is reported. Gate voltage dependent transport measurements demonstrate that the nanowires can be predictably synthesized as either n- or p-type. These doped nanowires can be characterized based on their electric field response and we find that n- type doping scales over a range from 10(17) to 10(19) cm(-3) with increasing input TESn dopant molar fraction. On the other hand, the p-type doping using DMZn saturates at low levels, probably related to a strong increase in nanowire growth rate with increasing DMZn molar fractions. By optimizing growth conditions with respect to tapering, axial pn-junctions exhibiting rectifying behavior were fabricated. The pn-junctions can be operated as light emitting diodes. (Less)
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author
; ; ; ; ; ; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Nanotechnology
volume
19
issue
44
article number
445602
publisher
IOP Publishing
external identifiers
  • wos:000259701800017
  • scopus:58149235128
ISSN
0957-4484
DOI
10.1088/0957-4484/19/44/445602
language
English
LU publication?
yes
id
03f3d24f-f1e7-4660-afc3-31adba71263f (old id 1285678)
date added to LUP
2016-04-01 12:22:02
date last changed
2025-10-14 10:02:11
@article{03f3d24f-f1e7-4660-afc3-31adba71263f,
  abstract     = {{The use of tetraethyltin (TESn) and dimethylzinc (DMZn) as in situ n- and p-dopant precursors during particle-assisted growth of InP nanowires is reported. Gate voltage dependent transport measurements demonstrate that the nanowires can be predictably synthesized as either n- or p-type. These doped nanowires can be characterized based on their electric field response and we find that n- type doping scales over a range from 10(17) to 10(19) cm(-3) with increasing input TESn dopant molar fraction. On the other hand, the p-type doping using DMZn saturates at low levels, probably related to a strong increase in nanowire growth rate with increasing DMZn molar fractions. By optimizing growth conditions with respect to tapering, axial pn-junctions exhibiting rectifying behavior were fabricated. The pn-junctions can be operated as light emitting diodes.}},
  author       = {{Borgström, Magnus and Norberg, E. and Wickert, P. and Nilsson, H. A. and Trägårdh, Johanna and Dick Thelander, Kimberly and Statkute, G. and Ramvall, Peter and Deppert, Knut and Samuelson, Lars}},
  issn         = {{0957-4484}},
  language     = {{eng}},
  number       = {{44}},
  publisher    = {{IOP Publishing}},
  series       = {{Nanotechnology}},
  title        = {{Precursor evaluation for in situ InP nanowire doping}},
  url          = {{http://dx.doi.org/10.1088/0957-4484/19/44/445602}},
  doi          = {{10.1088/0957-4484/19/44/445602}},
  volume       = {{19}},
  year         = {{2008}},
}