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Effects of traps in the gate stack on the small-signal RF response of III-V nanowire MOSFETs

Hellenbrand, Markus LU ; Lind, Erik LU ; Kilpi, Olli-Pekka LU and Wernersson, Lars-Erik LU (2020) In Solid-State Electronics 171.
Abstract
We present a detailed study of the effect of gate-oxide-related defects (traps) on the small-signal radio frequency (RF) response of III-V nanowire MOSFETs and find that the effects are clearly identifiable in the measured admittance parameters and in important design parameters such as h21 (forward current gain) and MSG (maximum stable gain). We include the identified effects in a small-signal model alongside results from previous investigations of III-V RF MOSFETs and thus provide a comprehensive physical small-signal RF model for this type of transistor, which accurately describes the measured admittance parameters and gains. We verify the physical basis of the model assumptions by calculating the oxide defect density from the measured... (More)
We present a detailed study of the effect of gate-oxide-related defects (traps) on the small-signal radio frequency (RF) response of III-V nanowire MOSFETs and find that the effects are clearly identifiable in the measured admittance parameters and in important design parameters such as h21 (forward current gain) and MSG (maximum stable gain). We include the identified effects in a small-signal model alongside results from previous investigations of III-V RF MOSFETs and thus provide a comprehensive physical small-signal RF model for this type of transistor, which accurately describes the measured admittance parameters and gains. We verify the physical basis of the model assumptions by calculating the oxide defect density from the measured admittances. (Less)
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author
; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
Border Traps, Gate Oxide Defects, Interface Defects, III-V, MOSFET, RF, Small-Signal Model
in
Solid-State Electronics
volume
171
article number
107840
publisher
Elsevier
external identifiers
  • scopus:85089275763
ISSN
0038-1101
DOI
10.1016/j.sse.2020.107840
language
English
LU publication?
yes
id
d35a38b2-3f76-4858-8500-9ca1d843317b
date added to LUP
2020-05-12 23:43:50
date last changed
2020-08-26 05:14:57
@article{d35a38b2-3f76-4858-8500-9ca1d843317b,
  abstract     = {We present a detailed study of the effect of gate-oxide-related defects (traps) on the small-signal radio frequency (RF) response of III-V nanowire MOSFETs and find that the effects are clearly identifiable in the measured admittance parameters and in important design parameters such as h21 (forward current gain) and MSG (maximum stable gain). We include the identified effects in a small-signal model alongside results from previous investigations of III-V RF MOSFETs and thus provide a comprehensive physical small-signal RF model for this type of transistor, which accurately describes the measured admittance parameters and gains. We verify the physical basis of the model assumptions by calculating the oxide defect density from the measured admittances.},
  author       = {Hellenbrand, Markus and Lind, Erik and Kilpi, Olli-Pekka and Wernersson, Lars-Erik},
  issn         = {0038-1101},
  language     = {eng},
  publisher    = {Elsevier},
  series       = {Solid-State Electronics},
  title        = {Effects of traps in the gate stack on the small-signal RF response of III-V nanowire MOSFETs},
  url          = {https://lup.lub.lu.se/search/ws/files/79602846/RF_Defects_LU.pdf},
  doi          = {10.1016/j.sse.2020.107840},
  volume       = {171},
  year         = {2020},
}