Effects of traps in the gate stack on the small-signal RF response of III-V nanowire MOSFETs
(2020) In Solid-State Electronics 171.- Abstract
- We present a detailed study of the effect of gate-oxide-related defects (traps) on the small-signal radio frequency (RF) response of III-V nanowire MOSFETs and find that the effects are clearly identifiable in the measured admittance parameters and in important design parameters such as h21 (forward current gain) and MSG (maximum stable gain). We include the identified effects in a small-signal model alongside results from previous investigations of III-V RF MOSFETs and thus provide a comprehensive physical small-signal RF model for this type of transistor, which accurately describes the measured admittance parameters and gains. We verify the physical basis of the model assumptions by calculating the oxide defect density from the measured... (More)
- We present a detailed study of the effect of gate-oxide-related defects (traps) on the small-signal radio frequency (RF) response of III-V nanowire MOSFETs and find that the effects are clearly identifiable in the measured admittance parameters and in important design parameters such as h21 (forward current gain) and MSG (maximum stable gain). We include the identified effects in a small-signal model alongside results from previous investigations of III-V RF MOSFETs and thus provide a comprehensive physical small-signal RF model for this type of transistor, which accurately describes the measured admittance parameters and gains. We verify the physical basis of the model assumptions by calculating the oxide defect density from the measured admittances. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/d35a38b2-3f76-4858-8500-9ca1d843317b
- author
- Hellenbrand, Markus LU ; Lind, Erik LU ; Kilpi, Olli-Pekka LU and Wernersson, Lars-Erik LU
- organization
- publishing date
- 2020
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- Border Traps, Gate Oxide Defects, Interface Defects, III-V, MOSFET, RF, Small-Signal Model
- in
- Solid-State Electronics
- volume
- 171
- article number
- 107840
- publisher
- Elsevier
- external identifiers
-
- scopus:85089275763
- ISSN
- 0038-1101
- DOI
- 10.1016/j.sse.2020.107840
- language
- English
- LU publication?
- yes
- id
- d35a38b2-3f76-4858-8500-9ca1d843317b
- date added to LUP
- 2020-05-12 23:43:50
- date last changed
- 2024-07-24 18:13:31
@article{d35a38b2-3f76-4858-8500-9ca1d843317b, abstract = {{We present a detailed study of the effect of gate-oxide-related defects (traps) on the small-signal radio frequency (RF) response of III-V nanowire MOSFETs and find that the effects are clearly identifiable in the measured admittance parameters and in important design parameters such as h21 (forward current gain) and MSG (maximum stable gain). We include the identified effects in a small-signal model alongside results from previous investigations of III-V RF MOSFETs and thus provide a comprehensive physical small-signal RF model for this type of transistor, which accurately describes the measured admittance parameters and gains. We verify the physical basis of the model assumptions by calculating the oxide defect density from the measured admittances.}}, author = {{Hellenbrand, Markus and Lind, Erik and Kilpi, Olli-Pekka and Wernersson, Lars-Erik}}, issn = {{0038-1101}}, keywords = {{Border Traps; Gate Oxide Defects; Interface Defects; III-V; MOSFET; RF; Small-Signal Model}}, language = {{eng}}, publisher = {{Elsevier}}, series = {{Solid-State Electronics}}, title = {{Effects of traps in the gate stack on the small-signal RF response of III-V nanowire MOSFETs}}, url = {{https://lup.lub.lu.se/search/files/79602846/RF_Defects_LU.pdf}}, doi = {{10.1016/j.sse.2020.107840}}, volume = {{171}}, year = {{2020}}, }