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Investigation of Reverse Filament Formation in ITO/HfO2-based RRAM

Persson, Karl-magnus LU ; Mamidala, Saketh Ram LU orcid ; Borg, Mattias LU orcid and Wernersson, Lars-erik LU (2019) 77th Device Research Conference (DRC) p.91-92
Abstract
To overcome the large discrepancy in speed between computational devices and that of contemporary large capacity non-volatile memory (NVM) technologies, resistive random access memory (RRAM) technologies are seen as promising candidates, offering speed/energy improvements in several orders of magnitude while being 3D integration compatible [1]. Indium-Tin-Oxide (ITO) has several unique properties for RRAM operation, perhaps most prominently the self-compliance and an ultra-low switching voltage (±200 mV) [2]. We report on considerations for ITO electrical bottom electrode (BE) RRAM where we vary the ALD oxide deposition parameters in order to improve the reverse filament formation (RFF) occurring at large reset voltages. RFF is when the... (More)
To overcome the large discrepancy in speed between computational devices and that of contemporary large capacity non-volatile memory (NVM) technologies, resistive random access memory (RRAM) technologies are seen as promising candidates, offering speed/energy improvements in several orders of magnitude while being 3D integration compatible [1]. Indium-Tin-Oxide (ITO) has several unique properties for RRAM operation, perhaps most prominently the self-compliance and an ultra-low switching voltage (±200 mV) [2]. We report on considerations for ITO electrical bottom electrode (BE) RRAM where we vary the ALD oxide deposition parameters in order to improve the reverse filament formation (RFF) occurring at large reset voltages. RFF is when the conducting filament is reformed. One of the key parameters of RRAM is the endurance, how many times it can switch before failure. The RFF is one of the limitations in the number of switches until a device reaches failure and it is thus of high importance to ensure a sufficient margin between the highest applied reset voltage and the RFF voltage not to compromise the endurance. We optimized the oxide to improve the RFF properties. (Less)
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author
; ; and
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
host publication
2019 Device Research Conference (DRC)
pages
2 pages
publisher
IEEE - Institute of Electrical and Electronics Engineers Inc.
conference name
77th Device Research Conference (DRC)
conference location
Ann Arbor, United States
conference dates
2019-06-23 - 2019-06-26
external identifiers
  • scopus:85083250328
ISBN
978-1-7281-2111-6
978-1-7281-2112-3
DOI
10.1109/DRC46940.2019.9046443
language
English
LU publication?
yes
id
23465f8d-b9fd-470c-9d62-dd88a68f0c30
date added to LUP
2020-04-17 02:17:45
date last changed
2024-05-15 09:57:15
@inproceedings{23465f8d-b9fd-470c-9d62-dd88a68f0c30,
  abstract     = {{To overcome the large discrepancy in speed between computational devices and that of contemporary large capacity non-volatile memory (NVM) technologies, resistive random access memory (RRAM) technologies are seen as promising candidates, offering speed/energy improvements in several orders of magnitude while being 3D integration compatible [1]. Indium-Tin-Oxide (ITO) has several unique properties for RRAM operation, perhaps most prominently the self-compliance and an ultra-low switching voltage (±200 mV) [2]. We report on considerations for ITO electrical bottom electrode (BE) RRAM where we vary the ALD oxide deposition parameters in order to improve the reverse filament formation (RFF) occurring at large reset voltages. RFF is when the conducting filament is reformed. One of the key parameters of RRAM is the endurance, how many times it can switch before failure. The RFF is one of the limitations in the number of switches until a device reaches failure and it is thus of high importance to ensure a sufficient margin between the highest applied reset voltage and the RFF voltage not to compromise the endurance. We optimized the oxide to improve the RFF properties.}},
  author       = {{Persson, Karl-magnus and Mamidala, Saketh Ram and Borg, Mattias and Wernersson, Lars-erik}},
  booktitle    = {{2019 Device Research Conference (DRC)}},
  isbn         = {{978-1-7281-2111-6}},
  language     = {{eng}},
  pages        = {{91--92}},
  publisher    = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}},
  title        = {{Investigation of Reverse Filament Formation in ITO/HfO2-based RRAM}},
  url          = {{http://dx.doi.org/10.1109/DRC46940.2019.9046443}},
  doi          = {{10.1109/DRC46940.2019.9046443}},
  year         = {{2019}},
}