Investigation of Reverse Filament Formation in ITO/HfO2-based RRAM
Persson, Karl-magnus LU ; Mamidala, Saketh Ram LU
; Borg, Mattias
LU
and Wernersson, Lars-erik
LU
(2019)
77th Device Research Conference (DRC)
p.91-92
- Abstract
- To overcome the large discrepancy in speed between computational devices and that of contemporary large capacity non-volatile memory (NVM) technologies, resistive random access memory (RRAM) technologies are seen as promising candidates, offering speed/energy improvements in several orders of magnitude while being 3D integration compatible [1]. Indium-Tin-Oxide (ITO) has several unique properties for RRAM operation, perhaps most prominently the self-compliance and an ultra-low switching voltage (±200 mV) [2]. We report on considerations for ITO electrical bottom electrode (BE) RRAM where we vary the ALD oxide deposition parameters in order to improve the reverse filament formation (RFF) occurring at large reset voltages. RFF is when the... (More)
- To overcome the large discrepancy in speed between computational devices and that of contemporary large capacity non-volatile memory (NVM) technologies, resistive random access memory (RRAM) technologies are seen as promising candidates, offering speed/energy improvements in several orders of magnitude while being 3D integration compatible [1]. Indium-Tin-Oxide (ITO) has several unique properties for RRAM operation, perhaps most prominently the self-compliance and an ultra-low switching voltage (±200 mV) [2]. We report on considerations for ITO electrical bottom electrode (BE) RRAM where we vary the ALD oxide deposition parameters in order to improve the reverse filament formation (RFF) occurring at large reset voltages. RFF is when the conducting filament is reformed. One of the key parameters of RRAM is the endurance, how many times it can switch before failure. The RFF is one of the limitations in the number of switches until a device reaches failure and it is thus of high importance to ensure a sufficient margin between the highest applied reset voltage and the RFF voltage not to compromise the endurance. We optimized the oxide to improve the RFF properties. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/23465f8d-b9fd-470c-9d62-dd88a68f0c30
- author
- Persson, Karl-magnus
LU
; Mamidala, Saketh Ram
LU
; Borg, Mattias
LU
and Wernersson, Lars-erik
LU
- organization
- publishing date
- 2019-06
- type
- Chapter in Book/Report/Conference proceeding
- publication status
- published
- subject
- host publication
- 2019 Device Research Conference (DRC)
- pages
- 2 pages
- publisher
- IEEE - Institute of Electrical and Electronics Engineers Inc.
- conference name
- 77th Device Research Conference (DRC)
- conference location
- Ann Arbor, United States
- conference dates
- 2019-06-23 - 2019-06-26
- external identifiers
-
- scopus:85083250328
- ISBN
- 978-1-7281-2111-6
- 978-1-7281-2112-3
- DOI
- 10.1109/DRC46940.2019.9046443
- language
- English
- LU publication?
- yes
- id
- 23465f8d-b9fd-470c-9d62-dd88a68f0c30
- date added to LUP
- 2020-04-17 02:17:45
- date last changed
- 2024-05-15 09:57:15
@inproceedings{23465f8d-b9fd-470c-9d62-dd88a68f0c30,
abstract = {{To overcome the large discrepancy in speed between computational devices and that of contemporary large capacity non-volatile memory (NVM) technologies, resistive random access memory (RRAM) technologies are seen as promising candidates, offering speed/energy improvements in several orders of magnitude while being 3D integration compatible [1]. Indium-Tin-Oxide (ITO) has several unique properties for RRAM operation, perhaps most prominently the self-compliance and an ultra-low switching voltage (±200 mV) [2]. We report on considerations for ITO electrical bottom electrode (BE) RRAM where we vary the ALD oxide deposition parameters in order to improve the reverse filament formation (RFF) occurring at large reset voltages. RFF is when the conducting filament is reformed. One of the key parameters of RRAM is the endurance, how many times it can switch before failure. The RFF is one of the limitations in the number of switches until a device reaches failure and it is thus of high importance to ensure a sufficient margin between the highest applied reset voltage and the RFF voltage not to compromise the endurance. We optimized the oxide to improve the RFF properties.}},
author = {{Persson, Karl-magnus and Mamidala, Saketh Ram and Borg, Mattias and Wernersson, Lars-erik}},
booktitle = {{2019 Device Research Conference (DRC)}},
isbn = {{978-1-7281-2111-6}},
language = {{eng}},
pages = {{91--92}},
publisher = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}},
title = {{Investigation of Reverse Filament Formation in ITO/HfO2-based RRAM}},
url = {{http://dx.doi.org/10.1109/DRC46940.2019.9046443}},
doi = {{10.1109/DRC46940.2019.9046443}},
year = {{2019}},
}