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Tuning of Source Material for InAs/InGaAsSb/GaSb Application-Specific Vertical Nanowire Tunnel FETs

Krishnaraja, Abinaya LU ; Svensson, Johannes LU ; Memisevic, Elvedin LU ; Zhu, Zhongyunshen LU ; Persson, Axel R. LU ; Lind, Erik LU ; Wallenberg, Lars Reine LU and Wernersson, Lars Erik LU (2020) In ACS Applied Electronic Materials 2(9). p.2882-2887
Abstract

Tunnel field-effect transistors (TFETs) are promising candidates that have demonstrated potential for and beyond the 3 nm technology node. One major challenge for the TFETs is to optimize the heterojunction for high drive currents while achieving steep switching. Thus far, such optimization has mainly been addressed theoretically. Here, we experimentally investigate the influence of the source segment composition on the performance for vertical nanowire InAs/InGaAsSb/GaSb TFETs. Compositional analysis using transmission electron microscopy is combined with simulations to interpret the results from electrical characterization data. The results show that subthreshold swing (S) and transconductance (gm) decrease with increasing arsenic... (More)

Tunnel field-effect transistors (TFETs) are promising candidates that have demonstrated potential for and beyond the 3 nm technology node. One major challenge for the TFETs is to optimize the heterojunction for high drive currents while achieving steep switching. Thus far, such optimization has mainly been addressed theoretically. Here, we experimentally investigate the influence of the source segment composition on the performance for vertical nanowire InAs/InGaAsSb/GaSb TFETs. Compositional analysis using transmission electron microscopy is combined with simulations to interpret the results from electrical characterization data. The results show that subthreshold swing (S) and transconductance (gm) decrease with increasing arsenic composition until the strain due to lattice mismatch increases them both. The role of indium concentration at the junction is also examined. This systematic optimization has rendered sub-40 mV/dec operating TFETs with a record transconductance efficiency gm/ID = 100 V-1, and it shows that different source materials are preferred for various applications.

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author
; ; ; ; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
GaSb, heterojunction, InAs, InGaAsSb, nanowire, tunnel FET
in
ACS Applied Electronic Materials
volume
2
issue
9
pages
6 pages
publisher
The American Chemical Society (ACS)
external identifiers
  • scopus:85092011336
ISSN
2637-6113
DOI
10.1021/acsaelm.0c00521
language
English
LU publication?
yes
id
ff53ea61-59cf-4ea2-afbe-69808ab34074
date added to LUP
2020-11-19 11:36:58
date last changed
2021-02-17 03:57:54
@article{ff53ea61-59cf-4ea2-afbe-69808ab34074,
  abstract     = {<p>Tunnel field-effect transistors (TFETs) are promising candidates that have demonstrated potential for and beyond the 3 nm technology node. One major challenge for the TFETs is to optimize the heterojunction for high drive currents while achieving steep switching. Thus far, such optimization has mainly been addressed theoretically. Here, we experimentally investigate the influence of the source segment composition on the performance for vertical nanowire InAs/InGaAsSb/GaSb TFETs. Compositional analysis using transmission electron microscopy is combined with simulations to interpret the results from electrical characterization data. The results show that subthreshold swing (S) and transconductance (gm) decrease with increasing arsenic composition until the strain due to lattice mismatch increases them both. The role of indium concentration at the junction is also examined. This systematic optimization has rendered sub-40 mV/dec operating TFETs with a record transconductance efficiency gm/ID = 100 V-1, and it shows that different source materials are preferred for various applications. </p>},
  author       = {Krishnaraja, Abinaya and Svensson, Johannes and Memisevic, Elvedin and Zhu, Zhongyunshen and Persson, Axel R. and Lind, Erik and Wallenberg, Lars Reine and Wernersson, Lars Erik},
  issn         = {2637-6113},
  language     = {eng},
  number       = {9},
  pages        = {2882--2887},
  publisher    = {The American Chemical Society (ACS)},
  series       = {ACS Applied Electronic Materials},
  title        = {Tuning of Source Material for InAs/InGaAsSb/GaSb Application-Specific Vertical Nanowire Tunnel FETs},
  url          = {http://dx.doi.org/10.1021/acsaelm.0c00521},
  doi          = {10.1021/acsaelm.0c00521},
  volume       = {2},
  year         = {2020},
}