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The Effect of Deposition Conditions on Heterointerface-Driven Band Alignment and Resistive Switching Properties

Yong, Zhihua LU ; Mamidala, Saketh, Ram LU orcid ; Persson, Karl-Magnus LU ; Subramanian, Gomathy Sandhya ; Wernersson, Lars-Erik LU and Pan, Jisheng (2022) In Advanced Electronic Materials 8(11).
Abstract
Titanium nitride and hafnium oxide stack have been widely used in various resistive memory elements since the materials are complementary-metal-oxide-semiconductor compatible. The understanding of the interface properties between the electrode and the oxide is important in designing the memory behavior. To bridge this understanding, HfOx grown using plasma enhanced atomic layer deposition (PEALD) and thermal atomic layer deposition (TALD) are compared, in terms of band alignment and electrical performances in the HfOx/PEALD TiN stacks. X-ray photoelectron spectroscopy reveals a thicker interfacial TiO2 layer in the PEALD HfOx/TiN stack whose interface resembles more to the PEALD HfOx/TiO2 interface (conduction band offset ΔEC = 1.63 eV),... (More)
Titanium nitride and hafnium oxide stack have been widely used in various resistive memory elements since the materials are complementary-metal-oxide-semiconductor compatible. The understanding of the interface properties between the electrode and the oxide is important in designing the memory behavior. To bridge this understanding, HfOx grown using plasma enhanced atomic layer deposition (PEALD) and thermal atomic layer deposition (TALD) are compared, in terms of band alignment and electrical performances in the HfOx/PEALD TiN stacks. X-ray photoelectron spectroscopy reveals a thicker interfacial TiO2 layer in the PEALD HfOx/TiN stack whose interface resembles more to the PEALD HfOx/TiO2 interface (conduction band offset ΔEC = 1.63 eV), whereas the TALD HfOx stack interface resembles more to the TALD HfOx/TiN interface (ΔEC = 2.22 eV). The increase in the forming voltage and the early onset of reverse filament formation (RFF) in the I–V measurements for the PEALD HfOx stack confirms the presence of the thicker interfacial layer; the early onset of RFF is likely related to a smaller ΔEC. The findings show the importance of understanding the intricate details of the material stack, where ΔEC difference and the presence of a thicker TiO2 interfacial layer due to different deposition procedures affect the device performance. (Less)
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author
; ; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Advanced Electronic Materials
volume
8
issue
11
article number
2200220
publisher
John Wiley & Sons Inc.
external identifiers
  • scopus:85135897064
ISSN
2199-160X
DOI
10.1002/aelm.202200220
language
English
LU publication?
yes
id
d7001200-0b84-4cbd-bee9-b9ecf8d3e18d
date added to LUP
2022-08-31 15:03:47
date last changed
2025-02-18 07:09:32
@article{d7001200-0b84-4cbd-bee9-b9ecf8d3e18d,
  abstract     = {{Titanium nitride and hafnium oxide stack have been widely used in various resistive memory elements since the materials are complementary-metal-oxide-semiconductor compatible. The understanding of the interface properties between the electrode and the oxide is important in designing the memory behavior. To bridge this understanding, HfOx grown using plasma enhanced atomic layer deposition (PEALD) and thermal atomic layer deposition (TALD) are compared, in terms of band alignment and electrical performances in the HfOx/PEALD TiN stacks. X-ray photoelectron spectroscopy reveals a thicker interfacial TiO2 layer in the PEALD HfOx/TiN stack whose interface resembles more to the PEALD HfOx/TiO2 interface (conduction band offset ΔEC = 1.63 eV), whereas the TALD HfOx stack interface resembles more to the TALD HfOx/TiN interface (ΔEC = 2.22 eV). The increase in the forming voltage and the early onset of reverse filament formation (RFF) in the I–V measurements for the PEALD HfOx stack confirms the presence of the thicker interfacial layer; the early onset of RFF is likely related to a smaller ΔEC. The findings show the importance of understanding the intricate details of the material stack, where ΔEC difference and the presence of a thicker TiO2 interfacial layer due to different deposition procedures affect the device performance.}},
  author       = {{Yong, Zhihua and Mamidala, Saketh, Ram and Persson, Karl-Magnus and Subramanian, Gomathy Sandhya and Wernersson, Lars-Erik and Pan, Jisheng}},
  issn         = {{2199-160X}},
  language     = {{eng}},
  month        = {{08}},
  number       = {{11}},
  publisher    = {{John Wiley & Sons Inc.}},
  series       = {{Advanced Electronic Materials}},
  title        = {{The Effect of Deposition Conditions on Heterointerface-Driven Band Alignment and Resistive Switching Properties}},
  url          = {{https://lup.lub.lu.se/search/files/123357988/The_Effect_of_Deposition_Conditions_on_Band_Alignment_corrected_proof.pdf}},
  doi          = {{10.1002/aelm.202200220}},
  volume       = {{8}},
  year         = {{2022}},
}