Adam Jönsson (Former)
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- 2023
-
Mark
Geometric control of diffusing elements on InAs semiconductor surfaces via metal contacts
(
- Contribution to journal › Article
- 2022
-
Mark
Performance enhancement of GaSb vertical nanowire p-type MOSFETs on Si by rapid thermal annealing
(
- Contribution to journal › Article
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Mark
Directed Self‐Assembly for Dense Vertical III–V Nanowires on Si and Implications for Gate All‐Around Deposition
(
- Contribution to journal › Article
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Mark
Improved Electrostatics through Digital Etch Schemes in Vertical GaSb Nanowire p-MOSFETs on Si
(
- Contribution to journal › Article
-
Mark
Hydrogen plasma enhanced oxide removal on GaSb planar and nanowire surfaces
2022) In Applied Surface Science(
- Contribution to journal › Article
- 2021
-
Mark
Doping Profiles in Ultrathin Vertical VLS-Grown InAs Nanowire MOSFETs with High Performance
(
- Contribution to journal › Article
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Mark
High-density logic-in-memory devices using vertical indium arsenide nanowires on silicon
(
- Contribution to journal › Article
-
Mark
Vertical Heterostructure III-V MOSFETs for CMOS, RF and Memory Applications
2021)(
- Thesis › Doctoral thesis (compilation)
- 2020
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Mark
Gate-Length Dependence of Vertical GaSb Nanowire p-MOSFETs on Si
(
- Contribution to journal › Article
- 2019
-
Mark
Balanced Drive Currents in 10–20 nm Diameter Nanowire All-III-V CMOS on Si
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding