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Strain mapping inside an individual processed vertical nanowire transistor using scanning X-ray nanodiffraction

Dzhigaev, Dmitry LU ; Svensson, Johannes LU ; Krishnaraja, Abinaya LU ; Zhu, Zhongyunshen LU ; Ren, Zhe LU ; Liu, Yi LU ; Kalbfleisch, Sebastian LU ; Björling, Alexander LU ; Lenrick, Filip LU and Balogh, Zoltan Imre , et al. (2020) In Nanoscale 12(27). p.14487-14493
Abstract

Semiconductor nanowires in wrapped, gate-all-around transistor geometry are highly favorable for future electronics. The advanced nanodevice processing results in strain due to the deposited dielectric and metal layers surrounding the nanowires, significantly affecting their performance. Therefore, non-destructive nanoscale characterization of complete devices is of utmost importance due to the small feature sizes and three-dimensional buried structure. Direct strain mapping inside heterostructured GaSb-InAs nanowire tunnel field-effect transistor embedded in dielectric HfO2, W metal gate layers, and an organic spacer is performed using fast scanning X-ray nanodiffraction. The effect of 10 nm W gate on a single embedded nanowire with... (More)

Semiconductor nanowires in wrapped, gate-all-around transistor geometry are highly favorable for future electronics. The advanced nanodevice processing results in strain due to the deposited dielectric and metal layers surrounding the nanowires, significantly affecting their performance. Therefore, non-destructive nanoscale characterization of complete devices is of utmost importance due to the small feature sizes and three-dimensional buried structure. Direct strain mapping inside heterostructured GaSb-InAs nanowire tunnel field-effect transistor embedded in dielectric HfO2, W metal gate layers, and an organic spacer is performed using fast scanning X-ray nanodiffraction. The effect of 10 nm W gate on a single embedded nanowire with segment diameters down to 40 nm is retrieved. The tensile strain values reach 0.26% in the p-type GaSb segment of the transistor. Supported by the finite element method simulation, we establish a connection between the Ar pressure used during the W layer deposition and the nanowire strain state. Thus, we can benchmark our models for further improvements in device engineering. Our study indicates, how the significant increase in X-ray brightness at 4th generation synchrotron, makes high-throughput measurements on realistic nanoelectronic devices viable.

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organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Nanoscale
volume
12
issue
27
pages
7 pages
publisher
Royal Society of Chemistry
external identifiers
  • pmid:32530025
  • scopus:85088234744
ISSN
2040-3372
DOI
10.1039/d0nr02260h
language
English
LU publication?
yes
id
5f631ad8-319e-4c7a-857c-90a260ebe0e7
date added to LUP
2020-07-30 15:01:21
date last changed
2020-08-10 11:53:51
@article{5f631ad8-319e-4c7a-857c-90a260ebe0e7,
  abstract     = {<p>Semiconductor nanowires in wrapped, gate-all-around transistor geometry are highly favorable for future electronics. The advanced nanodevice processing results in strain due to the deposited dielectric and metal layers surrounding the nanowires, significantly affecting their performance. Therefore, non-destructive nanoscale characterization of complete devices is of utmost importance due to the small feature sizes and three-dimensional buried structure. Direct strain mapping inside heterostructured GaSb-InAs nanowire tunnel field-effect transistor embedded in dielectric HfO2, W metal gate layers, and an organic spacer is performed using fast scanning X-ray nanodiffraction. The effect of 10 nm W gate on a single embedded nanowire with segment diameters down to 40 nm is retrieved. The tensile strain values reach 0.26% in the p-type GaSb segment of the transistor. Supported by the finite element method simulation, we establish a connection between the Ar pressure used during the W layer deposition and the nanowire strain state. Thus, we can benchmark our models for further improvements in device engineering. Our study indicates, how the significant increase in X-ray brightness at 4th generation synchrotron, makes high-throughput measurements on realistic nanoelectronic devices viable.</p>},
  author       = {Dzhigaev, Dmitry and Svensson, Johannes and Krishnaraja, Abinaya and Zhu, Zhongyunshen and Ren, Zhe and Liu, Yi and Kalbfleisch, Sebastian and Björling, Alexander and Lenrick, Filip and Balogh, Zoltan Imre and Hammarberg, Susanna and Wallentin, Jesper and Timm, Rainer and Wernersson, Lars Erik and Mikkelsen, Anders},
  issn         = {2040-3372},
  language     = {eng},
  month        = {07},
  number       = {27},
  pages        = {14487--14493},
  publisher    = {Royal Society of Chemistry},
  series       = {Nanoscale},
  title        = {Strain mapping inside an individual processed vertical nanowire transistor using scanning X-ray nanodiffraction},
  url          = {http://dx.doi.org/10.1039/d0nr02260h},
  doi          = {10.1039/d0nr02260h},
  volume       = {12},
  year         = {2020},
}