Controlling Filament Stability in Scaled Oxides (3 nm) for High Endurance (>106) Low Voltage ITO/HfO2 RRAMs for Future 3D Integration
(2021) 2021 Device Research Conference (DRC)- Abstract
- Non-volatile resistive-random-access-memories (RRAMs), which are highly scalable, cost-efficient and fast, are needed to meet the future computational needs beyond the traditional von-Neumann architecture. Oxygen vacancy RRAMs in particular have been demonstrated to operate at nanosecond programming ranges with low voltages as well as being integrated in dense cross-point arrays [1] . ITO/HfO 2 based RRAMs have emerged as a promising material stack due to its ultra-low switching voltages, self-compliance properties and the transparency of ITO that extends the material stack’s applications into display/wearable electronics [2] . As the different RRAM technologies are reaching maturity, scaling down the oxide thicknesses is now becoming... (More)
- Non-volatile resistive-random-access-memories (RRAMs), which are highly scalable, cost-efficient and fast, are needed to meet the future computational needs beyond the traditional von-Neumann architecture. Oxygen vacancy RRAMs in particular have been demonstrated to operate at nanosecond programming ranges with low voltages as well as being integrated in dense cross-point arrays [1] . ITO/HfO 2 based RRAMs have emerged as a promising material stack due to its ultra-low switching voltages, self-compliance properties and the transparency of ITO that extends the material stack’s applications into display/wearable electronics [2] . As the different RRAM technologies are reaching maturity, scaling down the oxide thicknesses is now becoming vital for compatibility with dense 3D integration as projected by the IRDS 2020 [3] . We report that, when operated at relevant current levels (sub 100 µA), the filament integrity of ITO/HfO2 RRAM with a thin high-k oxide (3 nm) can be controlled depending on the deposition conditions, where a thermal ALD (TALD) process results in a stable filament formation as compared to a plasma enhanced ALD (PEALD) process used for depositing HfO2 . Our results further indicate that the RRAM RESET is more gradual for the TALD (oxygen deficient) HfO2 as compared to the abrupt switching behavior for the PEALD (oxygen rich) HfO2 . (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/693bd494-94e9-4440-bc7f-e7db5f2b86f7
- author
- Mamidala, Saketh, Ram
LU
; Persson, Karl-Magnus LU and Wernersson, Lars-Erik LU
- organization
- publishing date
- 2021-07-01
- type
- Chapter in Book/Report/Conference proceeding
- publication status
- published
- subject
- host publication
- 2021 Device Research Conference (DRC)
- publisher
- IEEE - Institute of Electrical and Electronics Engineers Inc.
- conference name
- 2021 Device Research Conference (DRC)
- conference location
- Santa Barbara, CA, United States
- conference dates
- 2021-06-20 - 2021-06-23
- external identifiers
-
- scopus:85113863934
- ISBN
- 978-1-6654-1240-7
- 978-1-6654-2958-0
- DOI
- 10.1109/DRC52342.2021.9467131
- language
- English
- LU publication?
- yes
- id
- 693bd494-94e9-4440-bc7f-e7db5f2b86f7
- date added to LUP
- 2021-07-02 10:30:48
- date last changed
- 2025-01-13 10:08:15
@inproceedings{693bd494-94e9-4440-bc7f-e7db5f2b86f7, abstract = {{Non-volatile resistive-random-access-memories (RRAMs), which are highly scalable, cost-efficient and fast, are needed to meet the future computational needs beyond the traditional von-Neumann architecture. Oxygen vacancy RRAMs in particular have been demonstrated to operate at nanosecond programming ranges with low voltages as well as being integrated in dense cross-point arrays [1] . ITO/HfO 2 based RRAMs have emerged as a promising material stack due to its ultra-low switching voltages, self-compliance properties and the transparency of ITO that extends the material stack’s applications into display/wearable electronics [2] . As the different RRAM technologies are reaching maturity, scaling down the oxide thicknesses is now becoming vital for compatibility with dense 3D integration as projected by the IRDS 2020 [3] . We report that, when operated at relevant current levels (sub 100 µA), the filament integrity of ITO/HfO2 RRAM with a thin high-k oxide (3 nm) can be controlled depending on the deposition conditions, where a thermal ALD (TALD) process results in a stable filament formation as compared to a plasma enhanced ALD (PEALD) process used for depositing HfO<sub>2</sub> . Our results further indicate that the RRAM RESET is more gradual for the TALD (oxygen deficient) HfO<sub>2</sub> as compared to the abrupt switching behavior for the PEALD (oxygen rich) HfO<sub>2</sub> .}}, author = {{Mamidala, Saketh, Ram and Persson, Karl-Magnus and Wernersson, Lars-Erik}}, booktitle = {{2021 Device Research Conference (DRC)}}, isbn = {{978-1-6654-1240-7}}, language = {{eng}}, month = {{07}}, publisher = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}}, title = {{Controlling Filament Stability in Scaled Oxides (3 nm) for High Endurance (>10<sup>6</sup>) Low Voltage ITO/HfO<sub>2</sub> RRAMs for Future 3D Integration}}, url = {{http://dx.doi.org/10.1109/DRC52342.2021.9467131}}, doi = {{10.1109/DRC52342.2021.9467131}}, year = {{2021}}, }