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Controlling Filament Stability in Scaled Oxides (3 nm) for High Endurance (>106) Low Voltage ITO/HfO2 RRAMs for Future 3D Integration

Mamidala, Saketh, Ram LU orcid ; Persson, Karl-Magnus LU and Wernersson, Lars-Erik LU (2021) 2021 Device Research Conference (DRC)
Abstract
Non-volatile resistive-random-access-memories (RRAMs), which are highly scalable, cost-efficient and fast, are needed to meet the future computational needs beyond the traditional von-Neumann architecture. Oxygen vacancy RRAMs in particular have been demonstrated to operate at nanosecond programming ranges with low voltages as well as being integrated in dense cross-point arrays [1] . ITO/HfO 2 based RRAMs have emerged as a promising material stack due to its ultra-low switching voltages, self-compliance properties and the transparency of ITO that extends the material stack’s applications into display/wearable electronics [2] . As the different RRAM technologies are reaching maturity, scaling down the oxide thicknesses is now becoming... (More)
Non-volatile resistive-random-access-memories (RRAMs), which are highly scalable, cost-efficient and fast, are needed to meet the future computational needs beyond the traditional von-Neumann architecture. Oxygen vacancy RRAMs in particular have been demonstrated to operate at nanosecond programming ranges with low voltages as well as being integrated in dense cross-point arrays [1] . ITO/HfO 2 based RRAMs have emerged as a promising material stack due to its ultra-low switching voltages, self-compliance properties and the transparency of ITO that extends the material stack’s applications into display/wearable electronics [2] . As the different RRAM technologies are reaching maturity, scaling down the oxide thicknesses is now becoming vital for compatibility with dense 3D integration as projected by the IRDS 2020 [3] . We report that, when operated at relevant current levels (sub 100 µA), the filament integrity of ITO/HfO2 RRAM with a thin high-k oxide (3 nm) can be controlled depending on the deposition conditions, where a thermal ALD (TALD) process results in a stable filament formation as compared to a plasma enhanced ALD (PEALD) process used for depositing HfO2 . Our results further indicate that the RRAM RESET is more gradual for the TALD (oxygen deficient) HfO2 as compared to the abrupt switching behavior for the PEALD (oxygen rich) HfO2 . (Less)
Please use this url to cite or link to this publication:
author
; and
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
host publication
2021 Device Research Conference (DRC)
publisher
IEEE - Institute of Electrical and Electronics Engineers Inc.
conference name
2021 Device Research Conference (DRC)
conference location
Santa Barbara, CA, United States
conference dates
2021-06-20 - 2021-06-23
external identifiers
  • scopus:85113863934
ISBN
978-1-6654-2958-0
978-1-6654-1240-7
DOI
10.1109/DRC52342.2021.9467131
language
English
LU publication?
yes
id
693bd494-94e9-4440-bc7f-e7db5f2b86f7
date added to LUP
2021-07-02 10:30:48
date last changed
2024-06-01 12:32:14
@inproceedings{693bd494-94e9-4440-bc7f-e7db5f2b86f7,
  abstract     = {{Non-volatile resistive-random-access-memories (RRAMs), which are highly scalable, cost-efficient and fast, are needed to meet the future computational needs beyond the traditional von-Neumann architecture. Oxygen vacancy RRAMs in particular have been demonstrated to operate at nanosecond programming ranges with low voltages as well as being integrated in dense cross-point arrays [1] . ITO/HfO 2 based RRAMs have emerged as a promising material stack due to its ultra-low switching voltages, self-compliance properties and the transparency of ITO that extends the material stack’s applications into display/wearable electronics [2] . As the different RRAM technologies are reaching maturity, scaling down the oxide thicknesses is now becoming vital for compatibility with dense 3D integration as projected by the IRDS 2020 [3] . We report that, when operated at relevant current levels (sub 100 µA), the filament integrity of ITO/HfO2 RRAM with a thin high-k oxide (3 nm) can be controlled depending on the deposition conditions, where a thermal ALD (TALD) process results in a stable filament formation as compared to a plasma enhanced ALD (PEALD) process used for depositing HfO<sub>2</sub> . Our results further indicate that the RRAM RESET is more gradual for the TALD (oxygen deficient) HfO<sub>2</sub> as compared to the abrupt switching behavior for the PEALD (oxygen rich) HfO<sub>2</sub> .}},
  author       = {{Mamidala, Saketh, Ram and Persson, Karl-Magnus and Wernersson, Lars-Erik}},
  booktitle    = {{2021 Device Research Conference (DRC)}},
  isbn         = {{978-1-6654-2958-0}},
  language     = {{eng}},
  month        = {{07}},
  publisher    = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}},
  title        = {{Controlling Filament Stability in Scaled Oxides (3 nm) for High Endurance (>10<sup>6</sup>) Low Voltage ITO/HfO<sub>2</sub> RRAMs for Future 3D Integration}},
  url          = {{http://dx.doi.org/10.1109/DRC52342.2021.9467131}},
  doi          = {{10.1109/DRC52342.2021.9467131}},
  year         = {{2021}},
}