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Compressively-strained GaSb nanowires with core-shell heterostructures

Zhu, Zhongyunshen LU ; Svensson, Johannes LU ; Persson, Axel R. LU ; Wallenberg, Reine LU ; Gromov, Andrei V. and Wernersson, Lars Erik LU (2020) In Nano Research 13(9). p.2517-2524
Abstract

GaSb-based nanowires in a gate-all-around geometry are good candidates for binary p-type transistors, however they require the introduction of compressive strain to enhance the transport properties. Here, we for the first time demonstrate epitaxial GaSb-GaAsxSb1−x core-shell nanowires with a compressively strained core. Both axial and hydrostatic strain in GaSb core have been measured by X-ray diffraction (XRD) and Raman scattering, respectively. The optimal sample, almost without plastic relaxation, has an axial strain of −0.88% and a hydrostatic strain of −1.46%, leading to a noticeable effect where the light hole band is calculated to be 33.4 meV above the heavy hole band at the Γ-point. This valence band... (More)

GaSb-based nanowires in a gate-all-around geometry are good candidates for binary p-type transistors, however they require the introduction of compressive strain to enhance the transport properties. Here, we for the first time demonstrate epitaxial GaSb-GaAsxSb1−x core-shell nanowires with a compressively strained core. Both axial and hydrostatic strain in GaSb core have been measured by X-ray diffraction (XRD) and Raman scattering, respectively. The optimal sample, almost without plastic relaxation, has an axial strain of −0.88% and a hydrostatic strain of −1.46%, leading to a noticeable effect where the light hole band is calculated to be 33.4 meV above the heavy hole band at the Γ-point. This valence band feature offers more light holes to contribute the transport process, and thus may provide enhanced hole mobility by reducing both the interband scattering and the hole effective mass. Our results show that lattice-mismatched epitaxial core-shell heterostructures of high quality can also be realized in the promising yet demanding GaSb-based system. [Figure not available: see fulltext.].

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author
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organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
compressive strain, core-shell, GaSb-GaAsSb, heterostructure, nanowires, p-type transistors
in
Nano Research
volume
13
issue
9
pages
8 pages
publisher
Springer
external identifiers
  • scopus:85087082695
ISSN
1998-0124
DOI
10.1007/s12274-020-2889-3
language
English
LU publication?
yes
id
fc4471a3-3661-4b7c-af25-2210d742d8e6
date added to LUP
2020-07-10 11:40:45
date last changed
2020-12-21 13:41:47
@article{fc4471a3-3661-4b7c-af25-2210d742d8e6,
  abstract     = {<p>GaSb-based nanowires in a gate-all-around geometry are good candidates for binary p-type transistors, however they require the introduction of compressive strain to enhance the transport properties. Here, we for the first time demonstrate epitaxial GaSb-GaAs<sub>x</sub>Sb<sub>1−x</sub> core-shell nanowires with a compressively strained core. Both axial and hydrostatic strain in GaSb core have been measured by X-ray diffraction (XRD) and Raman scattering, respectively. The optimal sample, almost without plastic relaxation, has an axial strain of −0.88% and a hydrostatic strain of −1.46%, leading to a noticeable effect where the light hole band is calculated to be 33.4 meV above the heavy hole band at the Γ-point. This valence band feature offers more light holes to contribute the transport process, and thus may provide enhanced hole mobility by reducing both the interband scattering and the hole effective mass. Our results show that lattice-mismatched epitaxial core-shell heterostructures of high quality can also be realized in the promising yet demanding GaSb-based system. [Figure not available: see fulltext.].</p>},
  author       = {Zhu, Zhongyunshen and Svensson, Johannes and Persson, Axel R. and Wallenberg, Reine and Gromov, Andrei V. and Wernersson, Lars Erik},
  issn         = {1998-0124},
  language     = {eng},
  number       = {9},
  pages        = {2517--2524},
  publisher    = {Springer},
  series       = {Nano Research},
  title        = {Compressively-strained GaSb nanowires with core-shell heterostructures},
  url          = {http://dx.doi.org/10.1007/s12274-020-2889-3},
  doi          = {10.1007/s12274-020-2889-3},
  volume       = {13},
  year         = {2020},
}