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InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect Transistors

Memisevic, Elvedin LU ; Svensson, Johannes LU ; Lind, Erik LU and Wernersson, Lars-Erik LU (2017) In IEEE Transactions on Electron Devices 64(11). p.4746-4751
Abstract
Tunnel field-effect transistors with ability to operate well below the thermal limit (with a demonstrated 43 mV/decade at VDS = 0.1 V) are characterized in this paper. Based on 88 devices, the impact of the low subthreshold swing on the overall performance is studied. Furthermore, correlation between parameters that are important for device characterization is determined.
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
IEEE Transactions on Electron Devices
volume
64
issue
11
pages
4746 - 4751
publisher
IEEE--Institute of Electrical and Electronics Engineers Inc.
external identifiers
  • scopus:85024381343
  • scopus:85030326965
  • wos:000413732500054
ISSN
0018-9383
DOI
10.1109/TED.2017.2750763
language
English
LU publication?
yes
id
6a2069cb-2e6f-4ded-83b2-3e33528d98f6
date added to LUP
2017-10-02 15:01:25
date last changed
2018-04-08 05:01:03
@article{6a2069cb-2e6f-4ded-83b2-3e33528d98f6,
  abstract     = {Tunnel field-effect transistors with ability to operate well below the thermal limit (with a demonstrated 43 mV/decade at VDS = 0.1 V) are characterized in this paper. Based on 88 devices, the impact of the low subthreshold swing on the overall performance is studied. Furthermore, correlation between parameters that are important for device characterization is determined.},
  author       = {Memisevic, Elvedin and Svensson, Johannes and Lind, Erik and Wernersson, Lars-Erik},
  issn         = {0018-9383},
  language     = {eng},
  number       = {11},
  pages        = {4746--4751},
  publisher    = {IEEE--Institute of Electrical and Electronics Engineers Inc.},
  series       = {IEEE Transactions on Electron Devices},
  title        = {InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect Transistors},
  url          = {http://dx.doi.org/10.1109/TED.2017.2750763},
  volume       = {64},
  year         = {2017},
}