InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect Transistors
(2017) In IEEE Transactions on Electron Devices 64(11). p.4746-4751- Abstract
- Tunnel field-effect transistors with ability to operate well below the thermal limit (with a demonstrated 43 mV/decade at VDS = 0.1 V) are characterized in this paper. Based on 88 devices, the impact of the low subthreshold swing on the overall performance is studied. Furthermore, correlation between parameters that are important for device characterization is determined.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/6a2069cb-2e6f-4ded-83b2-3e33528d98f6
- author
- Memisevic, Elvedin LU ; Svensson, Johannes LU ; Lind, Erik LU and Wernersson, Lars-Erik LU
- organization
- publishing date
- 2017-11
- type
- Contribution to journal
- publication status
- published
- subject
- in
- IEEE Transactions on Electron Devices
- volume
- 64
- issue
- 11
- pages
- 4746 - 4751
- publisher
- IEEE - Institute of Electrical and Electronics Engineers Inc.
- external identifiers
-
- scopus:85030326965
- wos:000413732500054
- ISSN
- 0018-9383
- DOI
- 10.1109/TED.2017.2750763
- language
- English
- LU publication?
- yes
- id
- 6a2069cb-2e6f-4ded-83b2-3e33528d98f6
- date added to LUP
- 2017-10-02 15:01:25
- date last changed
- 2022-04-17 08:03:28
@article{6a2069cb-2e6f-4ded-83b2-3e33528d98f6, abstract = {{Tunnel field-effect transistors with ability to operate well below the thermal limit (with a demonstrated 43 mV/decade at VDS = 0.1 V) are characterized in this paper. Based on 88 devices, the impact of the low subthreshold swing on the overall performance is studied. Furthermore, correlation between parameters that are important for device characterization is determined.}}, author = {{Memisevic, Elvedin and Svensson, Johannes and Lind, Erik and Wernersson, Lars-Erik}}, issn = {{0018-9383}}, language = {{eng}}, number = {{11}}, pages = {{4746--4751}}, publisher = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}}, series = {{IEEE Transactions on Electron Devices}}, title = {{InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect Transistors}}, url = {{https://lup.lub.lu.se/search/files/47395844/InAs_InGaAsSb_GaSb_NW_TFETs_LU.pdf}}, doi = {{10.1109/TED.2017.2750763}}, volume = {{64}}, year = {{2017}}, }