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Electrically active defects in Al2O3-InGaAs MOS stacks at cryogenic temperatures

La Torraca, Paolo ; Padovani, Andrea ; Wernersson, Lars Erik LU ; Cherkaoui, Karim LU ; Hurley, Paul and Larcher, Luca (2023) 2023 IEEE International Integrated Reliability Workshop, IIRW 2023 In IEEE International Integrated Reliability Workshop Final Report
Abstract

The effects of defects in In0.47Ga0.53As/Al2O3/Ni metal-oxide-semiconductor (MOS) stacks at cryogenic temperatures are investigated. The MOS stacks exhibit a hysteresis in the capacitance-voltage (CV) curve, both at room temperature and at 100K, indicating the presence of effective charge capture/emission dynamics in the oxide even at cryogenic temperatures. Border traps (BTs) in the Al2O3 close to the In0.47Ga0.53As/Al2O3 interface are recognized as the best candidate for explaining the experimental CV. The hysteresis shape and its temperature dependence are used to profile the oxide defects' properties, which allow correctly... (More)

The effects of defects in In0.47Ga0.53As/Al2O3/Ni metal-oxide-semiconductor (MOS) stacks at cryogenic temperatures are investigated. The MOS stacks exhibit a hysteresis in the capacitance-voltage (CV) curve, both at room temperature and at 100K, indicating the presence of effective charge capture/emission dynamics in the oxide even at cryogenic temperatures. Border traps (BTs) in the Al2O3 close to the In0.47Ga0.53As/Al2O3 interface are recognized as the best candidate for explaining the experimental CV. The hysteresis shape and its temperature dependence are used to profile the oxide defects' properties, which allow correctly predicting the MOS stacks CV and conductance-voltage (GV) frequency dispersions and gaining insights on the hysteresis dynamics.

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author
; ; ; ; and
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
keywords
AlO, capacitance, cryogenic, hysteresis, InGaAs
host publication
2023 IEEE International Integrated Reliability Workshop, IIRW 2023
series title
IEEE International Integrated Reliability Workshop Final Report
publisher
IEEE - Institute of Electrical and Electronics Engineers Inc.
conference name
2023 IEEE International Integrated Reliability Workshop, IIRW 2023
conference location
South Lake Tahoe, United States
conference dates
2023-10-08 - 2023-10-12
external identifiers
  • scopus:85190362053
ISSN
2374-8036
1930-8841
ISBN
9798350327274
DOI
10.1109/IIRW59383.2023.10477706
language
English
LU publication?
yes
id
59d82f9d-543e-436f-a5dd-9732d5351bb2
date added to LUP
2024-04-29 14:52:07
date last changed
2024-05-13 16:10:35
@inproceedings{59d82f9d-543e-436f-a5dd-9732d5351bb2,
  abstract     = {{<p>The effects of defects in In<sub>0.47</sub>Ga<sub>0.53</sub>As/Al<sub>2</sub>O<sub>3</sub>/Ni metal-oxide-semiconductor (MOS) stacks at cryogenic temperatures are investigated. The MOS stacks exhibit a hysteresis in the capacitance-voltage (CV) curve, both at room temperature and at 100K, indicating the presence of effective charge capture/emission dynamics in the oxide even at cryogenic temperatures. Border traps (BTs) in the Al<sub>2</sub>O<sub>3</sub> close to the In<sub>0.47</sub>Ga<sub>0.53</sub>As/Al<sub>2</sub>O<sub>3</sub> interface are recognized as the best candidate for explaining the experimental CV. The hysteresis shape and its temperature dependence are used to profile the oxide defects' properties, which allow correctly predicting the MOS stacks CV and conductance-voltage (GV) frequency dispersions and gaining insights on the hysteresis dynamics.</p>}},
  author       = {{La Torraca, Paolo and Padovani, Andrea and Wernersson, Lars Erik and Cherkaoui, Karim and Hurley, Paul and Larcher, Luca}},
  booktitle    = {{2023 IEEE International Integrated Reliability Workshop, IIRW 2023}},
  isbn         = {{9798350327274}},
  issn         = {{2374-8036}},
  keywords     = {{AlO; capacitance; cryogenic; hysteresis; InGaAs}},
  language     = {{eng}},
  publisher    = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}},
  series       = {{IEEE International Integrated Reliability Workshop Final Report}},
  title        = {{Electrically active defects in Al<sub>2</sub>O<sub>3</sub>-InGaAs MOS stacks at cryogenic temperatures}},
  url          = {{http://dx.doi.org/10.1109/IIRW59383.2023.10477706}},
  doi          = {{10.1109/IIRW59383.2023.10477706}},
  year         = {{2023}},
}