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- 2023
-
Mark
Electrically active defects in Al2O3-InGaAs MOS stacks at cryogenic temperatures
2023) 2023 IEEE International Integrated Reliability Workshop, IIRW 2023 In IEEE International Integrated Reliability Workshop Final Report(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2016
-
Mark
Effect of Gate Voltage Stress on InGaAs MOSFET with HfO2 or Al2O3 Dielectric
(
- Contribution to journal › Article