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Effect of Gate Voltage Stress on InGaAs MOSFET with HfO2 or Al2O3 Dielectric

Roll, Guntrade LU ; Mo, Jiongjiong LU ; Lind, Erik LU ; Johansson, Sofia LU and Wernersson, Lars Erik LU (2016) In IEEE Transactions on Device and Materials Reliability 16(2). p.112-116
Abstract

InGaAs nMOSFETs with Al2O3 and HfO2 as dielectric are analyzed. The devices with Al 2O3 show a slightly better subthreshold slope. Both high-κ's have an equal transconductance frequency dispersion (gm-f). A reduction of gm-f is reached by scaling the HfO2 thickness. Positive gate stress leads to an increase in threshold voltage and subthreshold slope for all oxides. DC-gmax degradation is related purely to creation or activation of additional border traps during stress. The RF-gmax is not degraded. Similar time constants hint to a relation between the (semi-)stable degradation of DC-gmax and the threshold voltage... (More)

InGaAs nMOSFETs with Al2O3 and HfO2 as dielectric are analyzed. The devices with Al 2O3 show a slightly better subthreshold slope. Both high-κ's have an equal transconductance frequency dispersion (gm-f). A reduction of gm-f is reached by scaling the HfO2 thickness. Positive gate stress leads to an increase in threshold voltage and subthreshold slope for all oxides. DC-gmax degradation is related purely to creation or activation of additional border traps during stress. The RF-gmax is not degraded. Similar time constants hint to a relation between the (semi-)stable degradation of DC-gmax and the threshold voltage increase. For the samples with HfO2, the effects of gate-stress induced additional border traps can only be detected at low frequencies. The created or activated defects are most likely located deep in the oxide. For Al2O3, the effect of additional border traps is also measurable at higher frequencies. The defects are created both closer to the Al2O3/InGaAs interface and deeper in the oxide.

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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
AlO, HfO, InGaAs, nMOSFET, PBTI
in
IEEE Transactions on Device and Materials Reliability
volume
16
issue
2
pages
5 pages
publisher
Institute of Electrical and Electronics Engineers Inc.
external identifiers
  • Scopus:84976286234
  • WOS:000378509900002
ISSN
1530-4388
DOI
10.1109/TDMR.2016.2535478
language
English
LU publication?
yes
id
e10fe366-ea93-4e06-acd5-f1a14865f1fa
date added to LUP
2016-07-18 12:17:31
date last changed
2017-01-01 08:30:39
@article{e10fe366-ea93-4e06-acd5-f1a14865f1fa,
  abstract     = {<p>InGaAs nMOSFETs with Al<sub>2</sub>O<sub>3</sub> and HfO<sub>2</sub> as dielectric are analyzed. The devices with Al <sub>2</sub>O<sub>3</sub> show a slightly better subthreshold slope. Both high-κ's have an equal transconductance frequency dispersion (g<sub>m</sub>-f). A reduction of g<sub>m</sub>-f is reached by scaling the HfO<sub>2</sub> thickness. Positive gate stress leads to an increase in threshold voltage and subthreshold slope for all oxides. DC-g<sub>max</sub> degradation is related purely to creation or activation of additional border traps during stress. The RF-g<sub>max</sub> is not degraded. Similar time constants hint to a relation between the (semi-)stable degradation of DC-g<sub>max</sub> and the threshold voltage increase. For the samples with HfO<sub>2</sub>, the effects of gate-stress induced additional border traps can only be detected at low frequencies. The created or activated defects are most likely located deep in the oxide. For Al<sub>2</sub>O<sub>3</sub>, the effect of additional border traps is also measurable at higher frequencies. The defects are created both closer to the Al<sub>2</sub>O<sub>3</sub>/InGaAs interface and deeper in the oxide.</p>},
  articleno    = {7422103},
  author       = {Roll, Guntrade and Mo, Jiongjiong and Lind, Erik and Johansson, Sofia and Wernersson, Lars Erik},
  issn         = {1530-4388},
  keyword      = {AlO,HfO,InGaAs,nMOSFET,PBTI},
  language     = {eng},
  month        = {06},
  number       = {2},
  pages        = {112--116},
  publisher    = {Institute of Electrical and Electronics Engineers Inc.},
  series       = {IEEE Transactions on Device and Materials Reliability},
  title        = {Effect of Gate Voltage Stress on InGaAs MOSFET with HfO<sub>2</sub> or Al<sub>2</sub>O<sub>3</sub> Dielectric},
  url          = {http://dx.doi.org/10.1109/TDMR.2016.2535478},
  volume       = {16},
  year         = {2016},
}