Jiongjiong Mo (Former)
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        - 2016
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                        Mark
        Effect of Gate Voltage Stress on InGaAs MOSFET with HfO2 or Al2O3 Dielectric
    
    - Contribution to journal › Article
 
- 2015
- 
                        Mark
        InP Drain Engineering in Asymmetric InGaAs/InP MOSFETs
    
    - Contribution to journal › Article
 
- 
                        Mark
        Defect evaluation in InGaAs field effect transistors with HfO2 or Al2O3 dielectric
    
    - Contribution to journal › Article
 
- 2014
- 
                        Mark
        In GaAs MOSFETs with InP Drain
    
    - Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
 
- 
                        Mark
        Asymmetric InGaAs/InP MOSFETs With Source/Drain Engineering
    
    - Contribution to journal › Article
 
- 
                        Mark
        Asymmetric InGaAs MOSFETs with InGaAs source and InP drain
    (2014) 26th International Conference on Indium Phosphide and Related Materials (IPRM)- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
 
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                        Mark
        Reduction of off-state drain leakage in InGaAs-based metal-oxide-semiconductor field-effect transistors
    
    - Contribution to journal › Article
 
- 2013
- 
                        Mark
        Characterization of Border Traps in III-V MOSFETs Using an RF Transconductance Method
    
    - Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
 
