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Asymmetric InGaAs/InP MOSFETs With Source/Drain Engineering

Mo, Jiongjiong LU ; Lind, Erik LU orcid and Wernersson, Lars-Erik LU (2014) In IEEE Electron Device Letters 35(5). p.515-517
Abstract
We have developed laterally asymmetric In0.53Ga0.47As/InP MOSFETs with different regrown contacts at the source (In0.53Ga0.47As) and the drain (InP). Introducing a wider bandgap material, InP, as the drain electrode, higher voltage gain g(m)/g(d) has been obtained with a reduced output conductance g(d) and improved breakdown voltage V-bd. For L-g = 50 nm, a high oscillation frequency f(max) = 300 GHz has been obtained using an InP drain. A gate-connected field-plate has been introduced, which contributes to the device saturation with better impact ionization/band-to-band tunneling immunity.
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author
; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
InGaAs MOSFET, source/drain engineering, voltage gain, oscillation, frequency
in
IEEE Electron Device Letters
volume
35
issue
5
pages
515 - 517
publisher
IEEE - Institute of Electrical and Electronics Engineers Inc.
external identifiers
  • wos:000335147600005
  • scopus:84899725361
ISSN
0741-3106
DOI
10.1109/LED.2014.2308925
language
English
LU publication?
yes
id
045002bd-1ccf-4eca-9185-509afcde4d1e (old id 4482412)
date added to LUP
2016-04-01 14:29:58
date last changed
2025-10-14 12:17:11
@article{045002bd-1ccf-4eca-9185-509afcde4d1e,
  abstract     = {{We have developed laterally asymmetric In0.53Ga0.47As/InP MOSFETs with different regrown contacts at the source (In0.53Ga0.47As) and the drain (InP). Introducing a wider bandgap material, InP, as the drain electrode, higher voltage gain g(m)/g(d) has been obtained with a reduced output conductance g(d) and improved breakdown voltage V-bd. For L-g = 50 nm, a high oscillation frequency f(max) = 300 GHz has been obtained using an InP drain. A gate-connected field-plate has been introduced, which contributes to the device saturation with better impact ionization/band-to-band tunneling immunity.}},
  author       = {{Mo, Jiongjiong and Lind, Erik and Wernersson, Lars-Erik}},
  issn         = {{0741-3106}},
  keywords     = {{InGaAs MOSFET; source/drain engineering; voltage gain; oscillation; frequency}},
  language     = {{eng}},
  number       = {{5}},
  pages        = {{515--517}},
  publisher    = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}},
  series       = {{IEEE Electron Device Letters}},
  title        = {{Asymmetric InGaAs/InP MOSFETs With Source/Drain Engineering}},
  url          = {{http://dx.doi.org/10.1109/LED.2014.2308925}},
  doi          = {{10.1109/LED.2014.2308925}},
  volume       = {{35}},
  year         = {{2014}},
}