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Individual Defects in InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect Transistors Operating below 60 mV/decade

Memisevic, Elvedin LU ; Hellenbrand, Markus LU ; Lind, Erik LU ; Persson, Axel LU ; Sant, Saurabh; Schenk, Andreas; Svensson, Johannes LU ; Wallenberg, Reine LU and Wernersson, Lars-Erik LU (2017) In Nano Letters
Abstract
Tunneling field-effect transistors (TunnelFET), a leading steep-slope transistor candidate, is still plagued by defect response, and there is a large discrepancy between measured and simulated device performance. In this work, highly scaled InAs/InxGa1−xAsySb1‑y/GaSb vertical nanowire TunnelFET with ability to operate well below 60 mV/decade at technically relevant currents are fabricated and characterized. The structure, composition, and strain is characterized using
transmission electron microscopy with emphasis on the heterojunction. Using Technology Computer Aided Design (TCAD) simulations and Random Telegraph Signal (RTS) noise measurements, effects of different type of defects are studied. The study reveals that the bulk defects... (More)
Tunneling field-effect transistors (TunnelFET), a leading steep-slope transistor candidate, is still plagued by defect response, and there is a large discrepancy between measured and simulated device performance. In this work, highly scaled InAs/InxGa1−xAsySb1‑y/GaSb vertical nanowire TunnelFET with ability to operate well below 60 mV/decade at technically relevant currents are fabricated and characterized. The structure, composition, and strain is characterized using
transmission electron microscopy with emphasis on the heterojunction. Using Technology Computer Aided Design (TCAD) simulations and Random Telegraph Signal (RTS) noise measurements, effects of different type of defects are studied. The study reveals that the bulk defects have the largest impact on the performance of these devices, although for these highly scaled devices interaction with even few oxide defects can have large impact on the performance. Understanding the contribution by individual defects, as outlined in this letter, is essential to verify the fundamental physics of device operation, and thus imperative for taking the III−V TunnelFETs to the next level. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
TFET, nanowire, InAs, GaSb, InGaAsSb
in
Nano Letters
publisher
The American Chemical Society
external identifiers
  • wos:000405643300054
ISSN
1530-6992
DOI
10.1021/acs.nanolett.7b01455
language
English
LU publication?
yes
id
96fabada-f725-437d-bef6-58305ed7db8a
date added to LUP
2017-06-22 15:32:53
date last changed
2017-09-18 11:42:23
@article{96fabada-f725-437d-bef6-58305ed7db8a,
  abstract     = {Tunneling field-effect transistors (TunnelFET), a leading steep-slope transistor candidate, is still plagued by defect response, and there is a large discrepancy between measured and simulated device performance. In this work, highly scaled InAs/InxGa1−xAsySb1‑y/GaSb vertical nanowire TunnelFET with ability to operate well below 60 mV/decade at technically relevant currents are fabricated and characterized. The structure, composition, and strain is characterized using<br/>transmission electron microscopy with emphasis on the heterojunction. Using Technology Computer Aided Design (TCAD) simulations and Random Telegraph Signal (RTS) noise measurements, effects of different type of defects are studied. The study reveals that the bulk defects have the largest impact on the performance of these devices, although for these highly scaled devices interaction with even few oxide defects can have large impact on the performance. Understanding the contribution by individual defects, as outlined in this letter, is essential to verify the fundamental physics of device operation, and thus imperative for taking the III−V TunnelFETs to the next level.},
  author       = {Memisevic, Elvedin and Hellenbrand, Markus and Lind, Erik and Persson, Axel and Sant, Saurabh and Schenk, Andreas and Svensson, Johannes and Wallenberg, Reine and Wernersson, Lars-Erik},
  issn         = {1530-6992},
  keyword      = {TFET,nanowire,InAs,GaSb,InGaAsSb},
  language     = {eng},
  month        = {06},
  publisher    = {The American Chemical Society},
  series       = {Nano Letters},
  title        = {Individual Defects in InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect Transistors Operating below 60 mV/decade},
  url          = {http://dx.doi.org/10.1021/acs.nanolett.7b01455},
  year         = {2017},
}