Cross-Point Arrays with Low-Power ITO-HfO2 Resistive Memory Cells Integrated on Vertical III-V Nanowires
(2020) In Advanced Electronic Materials 6(6).- Abstract
Vertical nanowires with cointegrated metal-oxide-semiconductor field-effect-transistor (MOSFET) selectors and nonvolatile resistive random access memory (RRAM) cells represent a promising candidate for fast, energy-efficient, cross-point memory cells. This paper explores indium-tin-oxide-hafnium-dioxide RRAM cells integrated onto arrays of indium-arsenide (InAs) vertical nanowires with a resulting area of 0.06 µm2 per cell. For low current operation, an improved switching uniformity over the intrinsic self-compliant behavior is demonstrated when using an external InAs nanowire MOSFET selector in series. The memory cells show consistent switching voltages below ±1 V and a switching cycle endurance of 106 is... (More)
Vertical nanowires with cointegrated metal-oxide-semiconductor field-effect-transistor (MOSFET) selectors and nonvolatile resistive random access memory (RRAM) cells represent a promising candidate for fast, energy-efficient, cross-point memory cells. This paper explores indium-tin-oxide-hafnium-dioxide RRAM cells integrated onto arrays of indium-arsenide (InAs) vertical nanowires with a resulting area of 0.06 µm2 per cell. For low current operation, an improved switching uniformity over the intrinsic self-compliant behavior is demonstrated when using an external InAs nanowire MOSFET selector in series. The memory cells show consistent switching voltages below ±1 V and a switching cycle endurance of 106 is demonstrated. The developed fabrication scheme is fully compatible with low-ON-resistance vertical III-V nanowire MOSFET selectors, where operational compatibility with the initial high-field filament forming is established. Due to the small footprint of a vertical implementation, high density integration is achievable, and with a measured programming energy for 50 ns pulses at 0.49 pJ, the technology promises fast and ultralow power cross-point memory arrays.
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- author
- Persson, Karl-Magnus LU ; Mamidala, Saketh, Ram LU ; Kilpi, Olli-Pekka LU ; Borg, Mattias LU and Wernersson, Lars-Erik LU
- organization
- publishing date
- 2020-05-11
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- RRAM, ITO, Nanowires, Memory arrays
- in
- Advanced Electronic Materials
- volume
- 6
- issue
- 6
- article number
- 2000154
- publisher
- Wiley-Blackwell
- external identifiers
-
- scopus:85084449118
- ISSN
- 2199-160X
- DOI
- 10.1002/aelm.202000154
- language
- English
- LU publication?
- yes
- id
- ebe2e3cd-55d3-46a7-bb91-696d5f08bd15
- date added to LUP
- 2020-05-11 14:32:31
- date last changed
- 2023-11-20 04:33:51
@article{ebe2e3cd-55d3-46a7-bb91-696d5f08bd15, abstract = {{<p>Vertical nanowires with cointegrated metal-oxide-semiconductor field-effect-transistor (MOSFET) selectors and nonvolatile resistive random access memory (RRAM) cells represent a promising candidate for fast, energy-efficient, cross-point memory cells. This paper explores indium-tin-oxide-hafnium-dioxide RRAM cells integrated onto arrays of indium-arsenide (InAs) vertical nanowires with a resulting area of 0.06 µm<sup>2</sup> per cell. For low current operation, an improved switching uniformity over the intrinsic self-compliant behavior is demonstrated when using an external InAs nanowire MOSFET selector in series. The memory cells show consistent switching voltages below ±1 V and a switching cycle endurance of 10<sup>6</sup> is demonstrated. The developed fabrication scheme is fully compatible with low-ON-resistance vertical III-V nanowire MOSFET selectors, where operational compatibility with the initial high-field filament forming is established. Due to the small footprint of a vertical implementation, high density integration is achievable, and with a measured programming energy for 50 ns pulses at 0.49 pJ, the technology promises fast and ultralow power cross-point memory arrays.</p>}}, author = {{Persson, Karl-Magnus and Mamidala, Saketh, Ram and Kilpi, Olli-Pekka and Borg, Mattias and Wernersson, Lars-Erik}}, issn = {{2199-160X}}, keywords = {{RRAM; ITO; Nanowires; Memory arrays}}, language = {{eng}}, month = {{05}}, number = {{6}}, publisher = {{Wiley-Blackwell}}, series = {{Advanced Electronic Materials}}, title = {{Cross-Point Arrays with Low-Power ITO-HfO2 Resistive Memory Cells Integrated on Vertical III-V Nanowires}}, url = {{http://dx.doi.org/10.1002/aelm.202000154}}, doi = {{10.1002/aelm.202000154}}, volume = {{6}}, year = {{2020}}, }