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Cross-Point Arrays with Low-Power ITO-HfO2 Resistive Memory Cells Integrated on Vertical III-V Nanowires

Persson, Karl-Magnus LU ; Mamidala, Saketh, Ram LU orcid ; Kilpi, Olli-Pekka LU ; Borg, Mattias LU orcid and Wernersson, Lars-Erik LU (2020) In Advanced Electronic Materials 6(6).
Abstract

Vertical nanowires with cointegrated metal-oxide-semiconductor field-effect-transistor (MOSFET) selectors and nonvolatile resistive random access memory (RRAM) cells represent a promising candidate for fast, energy-efficient, cross-point memory cells. This paper explores indium-tin-oxide-hafnium-dioxide RRAM cells integrated onto arrays of indium-arsenide (InAs) vertical nanowires with a resulting area of 0.06 µm2 per cell. For low current operation, an improved switching uniformity over the intrinsic self-compliant behavior is demonstrated when using an external InAs nanowire MOSFET selector in series. The memory cells show consistent switching voltages below ±1 V and a switching cycle endurance of 106 is... (More)

Vertical nanowires with cointegrated metal-oxide-semiconductor field-effect-transistor (MOSFET) selectors and nonvolatile resistive random access memory (RRAM) cells represent a promising candidate for fast, energy-efficient, cross-point memory cells. This paper explores indium-tin-oxide-hafnium-dioxide RRAM cells integrated onto arrays of indium-arsenide (InAs) vertical nanowires with a resulting area of 0.06 µm2 per cell. For low current operation, an improved switching uniformity over the intrinsic self-compliant behavior is demonstrated when using an external InAs nanowire MOSFET selector in series. The memory cells show consistent switching voltages below ±1 V and a switching cycle endurance of 106 is demonstrated. The developed fabrication scheme is fully compatible with low-ON-resistance vertical III-V nanowire MOSFET selectors, where operational compatibility with the initial high-field filament forming is established. Due to the small footprint of a vertical implementation, high density integration is achievable, and with a measured programming energy for 50 ns pulses at 0.49 pJ, the technology promises fast and ultralow power cross-point memory arrays.

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Please use this url to cite or link to this publication:
author
; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
RRAM, ITO, Nanowires, Memory arrays
in
Advanced Electronic Materials
volume
6
issue
6
article number
2000154
publisher
Wiley-Blackwell
external identifiers
  • scopus:85084449118
ISSN
2199-160X
DOI
10.1002/aelm.202000154
language
English
LU publication?
yes
id
ebe2e3cd-55d3-46a7-bb91-696d5f08bd15
date added to LUP
2020-05-11 14:32:31
date last changed
2023-11-20 04:33:51
@article{ebe2e3cd-55d3-46a7-bb91-696d5f08bd15,
  abstract     = {{<p>Vertical nanowires with cointegrated metal-oxide-semiconductor field-effect-transistor (MOSFET) selectors and nonvolatile resistive random access memory (RRAM) cells represent a promising candidate for fast, energy-efficient, cross-point memory cells. This paper explores indium-tin-oxide-hafnium-dioxide RRAM cells integrated onto arrays of indium-arsenide (InAs) vertical nanowires with a resulting area of 0.06 µm<sup>2</sup> per cell. For low current operation, an improved switching uniformity over the intrinsic self-compliant behavior is demonstrated when using an external InAs nanowire MOSFET selector in series. The memory cells show consistent switching voltages below ±1 V and a switching cycle endurance of 10<sup>6</sup> is demonstrated. The developed fabrication scheme is fully compatible with low-ON-resistance vertical III-V nanowire MOSFET selectors, where operational compatibility with the initial high-field filament forming is established. Due to the small footprint of a vertical implementation, high density integration is achievable, and with a measured programming energy for 50 ns pulses at 0.49 pJ, the technology promises fast and ultralow power cross-point memory arrays.</p>}},
  author       = {{Persson, Karl-Magnus and Mamidala, Saketh, Ram and Kilpi, Olli-Pekka and Borg, Mattias and Wernersson, Lars-Erik}},
  issn         = {{2199-160X}},
  keywords     = {{RRAM; ITO; Nanowires; Memory arrays}},
  language     = {{eng}},
  month        = {{05}},
  number       = {{6}},
  publisher    = {{Wiley-Blackwell}},
  series       = {{Advanced Electronic Materials}},
  title        = {{Cross-Point Arrays with Low-Power ITO-HfO2 Resistive Memory Cells Integrated on Vertical III-V Nanowires}},
  url          = {{http://dx.doi.org/10.1002/aelm.202000154}},
  doi          = {{10.1002/aelm.202000154}},
  volume       = {{6}},
  year         = {{2020}},
}