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Impact of source doping on the performance of vertical InAs/InGaAsSb/GaSb nanowire Tunnel Field-Effect Transistors

Memisevic, Elvedin LU ; Svensson, Johannes LU ; Lind, Erik LU and Wernersson, Lars-Erik LU (2018) In Nanotechnology 29(43).
Abstract
In this paper, we analyze experimental data from state-of-the-art vertical InAs/InGaAsSb/GaSb nanowire Tunnel Field-Effect Transistors to study influence of the source doping on their performance. Overall, the doping level impacts both off-state and on-state performance of these devices. Separation of the doping from the heterostructure improved the subthreshod swing of the devices. Best devices reached a point subthreshold swing of 30 mV/dec at 100x higher currents than what Si-based TFETs has achieved previously. However, separation of doping from the heterostructure had a significant impact on the on-state performance of these devices due to effects related to source depletion. Increase of the doping level, helped to improve the... (More)
In this paper, we analyze experimental data from state-of-the-art vertical InAs/InGaAsSb/GaSb nanowire Tunnel Field-Effect Transistors to study influence of the source doping on their performance. Overall, the doping level impacts both off-state and on-state performance of these devices. Separation of the doping from the heterostructure improved the subthreshod swing of the devices. Best devices reached a point subthreshold swing of 30 mV/dec at 100x higher currents than what Si-based TFETs has achieved previously. However, separation of doping from the heterostructure had a significant impact on the on-state performance of these devices due to effects related to source depletion. Increase of the doping level, helped to improve the on-state performance, which also increased the subthreshold swing. Thus, further optimization of doping incorporation at the heterostructure will help to improve vertical InAs/InGaAsSb/GaSb nanowire TFETs. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Nanotechnology
volume
29
issue
43
publisher
IOP Publishing
external identifiers
  • scopus:85053114010
ISSN
0957-4484
DOI
10.1088/1361-6528/aad949
language
English
LU publication?
yes
id
28797b9e-603c-455f-b622-427b9215b8df
date added to LUP
2018-08-15 17:47:12
date last changed
2019-10-15 06:43:30
@article{28797b9e-603c-455f-b622-427b9215b8df,
  abstract     = {In this paper, we analyze experimental data from state-of-the-art vertical InAs/InGaAsSb/GaSb nanowire Tunnel Field-Effect Transistors to study influence of the source doping on their performance. Overall, the doping level impacts both off-state and on-state performance of these devices. Separation of the doping from the heterostructure improved the subthreshod swing of the devices. Best devices reached a point subthreshold swing of 30 mV/dec at 100x higher currents than what Si-based TFETs has achieved previously. However, separation of doping from the heterostructure had a significant impact on the on-state performance of these devices due to effects related to source depletion. Increase of the doping level, helped to improve the on-state performance, which also increased the subthreshold swing. Thus, further optimization of doping incorporation at the heterostructure will help to improve vertical InAs/InGaAsSb/GaSb nanowire TFETs.},
  articleno    = {435201},
  author       = {Memisevic, Elvedin and Svensson, Johannes and Lind, Erik and Wernersson, Lars-Erik},
  issn         = {0957-4484},
  language     = {eng},
  number       = {43},
  publisher    = {IOP Publishing},
  series       = {Nanotechnology},
  title        = {Impact of source doping on the performance of vertical InAs/InGaAsSb/GaSb nanowire Tunnel Field-Effect Transistors},
  url          = {http://dx.doi.org/10.1088/1361-6528/aad949},
  volume       = {29},
  year         = {2018},
}