Impact of source doping on the performance of vertical InAs/InGaAsSb/GaSb nanowire Tunnel Field-Effect Transistors
(2018) In Nanotechnology 29(43).- Abstract
- In this paper, we analyze experimental data from state-of-the-art vertical InAs/InGaAsSb/GaSb nanowire Tunnel Field-Effect Transistors to study influence of the source doping on their performance. Overall, the doping level impacts both off-state and on-state performance of these devices. Separation of the doping from the heterostructure improved the subthreshod swing of the devices. Best devices reached a point subthreshold swing of 30 mV/dec at 100x higher currents than what Si-based TFETs has achieved previously. However, separation of doping from the heterostructure had a significant impact on the on-state performance of these devices due to effects related to source depletion. Increase of the doping level, helped to improve the... (More)
- In this paper, we analyze experimental data from state-of-the-art vertical InAs/InGaAsSb/GaSb nanowire Tunnel Field-Effect Transistors to study influence of the source doping on their performance. Overall, the doping level impacts both off-state and on-state performance of these devices. Separation of the doping from the heterostructure improved the subthreshod swing of the devices. Best devices reached a point subthreshold swing of 30 mV/dec at 100x higher currents than what Si-based TFETs has achieved previously. However, separation of doping from the heterostructure had a significant impact on the on-state performance of these devices due to effects related to source depletion. Increase of the doping level, helped to improve the on-state performance, which also increased the subthreshold swing. Thus, further optimization of doping incorporation at the heterostructure will help to improve vertical InAs/InGaAsSb/GaSb nanowire TFETs. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/28797b9e-603c-455f-b622-427b9215b8df
- author
- Memisevic, Elvedin LU ; Svensson, Johannes LU ; Lind, Erik LU and Wernersson, Lars-Erik LU
- organization
- publishing date
- 2018
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Nanotechnology
- volume
- 29
- issue
- 43
- article number
- 435201
- publisher
- IOP Publishing
- external identifiers
-
- pmid:30091724
- scopus:85053114010
- ISSN
- 0957-4484
- DOI
- 10.1088/1361-6528/aad949
- language
- English
- LU publication?
- yes
- id
- 28797b9e-603c-455f-b622-427b9215b8df
- date added to LUP
- 2018-08-15 17:47:12
- date last changed
- 2024-07-08 17:33:48
@article{28797b9e-603c-455f-b622-427b9215b8df, abstract = {{In this paper, we analyze experimental data from state-of-the-art vertical InAs/InGaAsSb/GaSb nanowire Tunnel Field-Effect Transistors to study influence of the source doping on their performance. Overall, the doping level impacts both off-state and on-state performance of these devices. Separation of the doping from the heterostructure improved the subthreshod swing of the devices. Best devices reached a point subthreshold swing of 30 mV/dec at 100x higher currents than what Si-based TFETs has achieved previously. However, separation of doping from the heterostructure had a significant impact on the on-state performance of these devices due to effects related to source depletion. Increase of the doping level, helped to improve the on-state performance, which also increased the subthreshold swing. Thus, further optimization of doping incorporation at the heterostructure will help to improve vertical InAs/InGaAsSb/GaSb nanowire TFETs.}}, author = {{Memisevic, Elvedin and Svensson, Johannes and Lind, Erik and Wernersson, Lars-Erik}}, issn = {{0957-4484}}, language = {{eng}}, number = {{43}}, publisher = {{IOP Publishing}}, series = {{Nanotechnology}}, title = {{Impact of source doping on the performance of vertical InAs/InGaAsSb/GaSb nanowire Tunnel Field-Effect Transistors}}, url = {{https://lup.lub.lu.se/search/files/50067979/Impact_of_source_doping_on_the_performance_of_vertical_TFETs_LU.pdf}}, doi = {{10.1088/1361-6528/aad949}}, volume = {{29}}, year = {{2018}}, }