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Nanowire Tunnel FET with Simultaneously Reduced Subthermionic Subthreshold Swing and Off-Current due to Negative Capacitance and Voltage Pinning Effects

Saeidi, Ali ; Rosca, Teodor ; Memisevic, Elvedin LU ; Stolichnov, Igor ; Cavalieri, Matteo ; Wernersson, Lars Erik LU and Ionescu, Adrian M. (2020) In Nano Letters 20(5). p.3255-3262
Abstract

Nanowire tunnel field-effect transistors (TFETs) have been proposed as the most advanced one-dimensional (1D) devices that break the thermionic 60 mV/decade of the subthreshold swing (SS) of metal oxide semiconductor field-effect transistors (MOSFETs) by using quantum mechanical band-to-band tunneling and excellent electrostatic control. Meanwhile, negative capacitance (NC) of ferroelectrics has been proposed as a promising performance booster of MOSFETs to bypass the aforementioned fundamental limit by exploiting the differential amplification of the gate voltage under certain conditions. We combine these two principles into a single structure, a negative capacitance heterostructure TFET, and experimentally demonstrate a double... (More)

Nanowire tunnel field-effect transistors (TFETs) have been proposed as the most advanced one-dimensional (1D) devices that break the thermionic 60 mV/decade of the subthreshold swing (SS) of metal oxide semiconductor field-effect transistors (MOSFETs) by using quantum mechanical band-to-band tunneling and excellent electrostatic control. Meanwhile, negative capacitance (NC) of ferroelectrics has been proposed as a promising performance booster of MOSFETs to bypass the aforementioned fundamental limit by exploiting the differential amplification of the gate voltage under certain conditions. We combine these two principles into a single structure, a negative capacitance heterostructure TFET, and experimentally demonstrate a double beneficial effect: (i) a super-steep SS value down to 10 mV/decade and an extended low slope region that is due to the NC effect and, (ii) a remarkable off-current reduction that is experimentally observed and explained for the first time by the effect of the ferroelectric dipoles, which set the surface potential in a slightly negative value and further blocks the source tunneling current in the off-state. State-of-the-art InAs/InGaAsSb/GaSb nanowire TFETs are employed as the baseline transistor and PZT and silicon-doped HfO2 as ferroelectric materials.

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author
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organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
Ferroelectric, Nanowire, Negative Capacitance, Tunnel FET, Voltage Pinning
in
Nano Letters
volume
20
issue
5
pages
8 pages
publisher
The American Chemical Society (ACS)
external identifiers
  • scopus:85084693958
  • pmid:32293188
ISSN
1530-6992
DOI
10.1021/acs.nanolett.9b05356
language
English
LU publication?
yes
id
b3d39fb6-72e2-43b9-ab18-7a9269dc1c05
date added to LUP
2020-06-03 12:34:58
date last changed
2024-06-27 18:32:24
@article{b3d39fb6-72e2-43b9-ab18-7a9269dc1c05,
  abstract     = {{<p>Nanowire tunnel field-effect transistors (TFETs) have been proposed as the most advanced one-dimensional (1D) devices that break the thermionic 60 mV/decade of the subthreshold swing (SS) of metal oxide semiconductor field-effect transistors (MOSFETs) by using quantum mechanical band-to-band tunneling and excellent electrostatic control. Meanwhile, negative capacitance (NC) of ferroelectrics has been proposed as a promising performance booster of MOSFETs to bypass the aforementioned fundamental limit by exploiting the differential amplification of the gate voltage under certain conditions. We combine these two principles into a single structure, a negative capacitance heterostructure TFET, and experimentally demonstrate a double beneficial effect: (i) a super-steep SS value down to 10 mV/decade and an extended low slope region that is due to the NC effect and, (ii) a remarkable off-current reduction that is experimentally observed and explained for the first time by the effect of the ferroelectric dipoles, which set the surface potential in a slightly negative value and further blocks the source tunneling current in the off-state. State-of-the-art InAs/InGaAsSb/GaSb nanowire TFETs are employed as the baseline transistor and PZT and silicon-doped HfO2 as ferroelectric materials.</p>}},
  author       = {{Saeidi, Ali and Rosca, Teodor and Memisevic, Elvedin and Stolichnov, Igor and Cavalieri, Matteo and Wernersson, Lars Erik and Ionescu, Adrian M.}},
  issn         = {{1530-6992}},
  keywords     = {{Ferroelectric; Nanowire; Negative Capacitance; Tunnel FET; Voltage Pinning}},
  language     = {{eng}},
  number       = {{5}},
  pages        = {{3255--3262}},
  publisher    = {{The American Chemical Society (ACS)}},
  series       = {{Nano Letters}},
  title        = {{Nanowire Tunnel FET with Simultaneously Reduced Subthermionic Subthreshold Swing and Off-Current due to Negative Capacitance and Voltage Pinning Effects}},
  url          = {{http://dx.doi.org/10.1021/acs.nanolett.9b05356}},
  doi          = {{10.1021/acs.nanolett.9b05356}},
  volume       = {{20}},
  year         = {{2020}},
}