Nanowire Tunnel FET with Simultaneously Reduced Subthermionic Subthreshold Swing and Off-Current due to Negative Capacitance and Voltage Pinning Effects
(2020) In Nano Letters 20(5). p.3255-3262- Abstract
Nanowire tunnel field-effect transistors (TFETs) have been proposed as the most advanced one-dimensional (1D) devices that break the thermionic 60 mV/decade of the subthreshold swing (SS) of metal oxide semiconductor field-effect transistors (MOSFETs) by using quantum mechanical band-to-band tunneling and excellent electrostatic control. Meanwhile, negative capacitance (NC) of ferroelectrics has been proposed as a promising performance booster of MOSFETs to bypass the aforementioned fundamental limit by exploiting the differential amplification of the gate voltage under certain conditions. We combine these two principles into a single structure, a negative capacitance heterostructure TFET, and experimentally demonstrate a double... (More)
Nanowire tunnel field-effect transistors (TFETs) have been proposed as the most advanced one-dimensional (1D) devices that break the thermionic 60 mV/decade of the subthreshold swing (SS) of metal oxide semiconductor field-effect transistors (MOSFETs) by using quantum mechanical band-to-band tunneling and excellent electrostatic control. Meanwhile, negative capacitance (NC) of ferroelectrics has been proposed as a promising performance booster of MOSFETs to bypass the aforementioned fundamental limit by exploiting the differential amplification of the gate voltage under certain conditions. We combine these two principles into a single structure, a negative capacitance heterostructure TFET, and experimentally demonstrate a double beneficial effect: (i) a super-steep SS value down to 10 mV/decade and an extended low slope region that is due to the NC effect and, (ii) a remarkable off-current reduction that is experimentally observed and explained for the first time by the effect of the ferroelectric dipoles, which set the surface potential in a slightly negative value and further blocks the source tunneling current in the off-state. State-of-the-art InAs/InGaAsSb/GaSb nanowire TFETs are employed as the baseline transistor and PZT and silicon-doped HfO2 as ferroelectric materials.
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- author
- Saeidi, Ali ; Rosca, Teodor ; Memisevic, Elvedin LU ; Stolichnov, Igor ; Cavalieri, Matteo ; Wernersson, Lars Erik LU and Ionescu, Adrian M.
- organization
- publishing date
- 2020
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- Ferroelectric, Nanowire, Negative Capacitance, Tunnel FET, Voltage Pinning
- in
- Nano Letters
- volume
- 20
- issue
- 5
- pages
- 8 pages
- publisher
- The American Chemical Society (ACS)
- external identifiers
-
- pmid:32293188
- scopus:85084693958
- ISSN
- 1530-6992
- DOI
- 10.1021/acs.nanolett.9b05356
- language
- English
- LU publication?
- yes
- id
- b3d39fb6-72e2-43b9-ab18-7a9269dc1c05
- date added to LUP
- 2020-06-03 12:34:58
- date last changed
- 2024-10-18 04:17:03
@article{b3d39fb6-72e2-43b9-ab18-7a9269dc1c05, abstract = {{<p>Nanowire tunnel field-effect transistors (TFETs) have been proposed as the most advanced one-dimensional (1D) devices that break the thermionic 60 mV/decade of the subthreshold swing (SS) of metal oxide semiconductor field-effect transistors (MOSFETs) by using quantum mechanical band-to-band tunneling and excellent electrostatic control. Meanwhile, negative capacitance (NC) of ferroelectrics has been proposed as a promising performance booster of MOSFETs to bypass the aforementioned fundamental limit by exploiting the differential amplification of the gate voltage under certain conditions. We combine these two principles into a single structure, a negative capacitance heterostructure TFET, and experimentally demonstrate a double beneficial effect: (i) a super-steep SS value down to 10 mV/decade and an extended low slope region that is due to the NC effect and, (ii) a remarkable off-current reduction that is experimentally observed and explained for the first time by the effect of the ferroelectric dipoles, which set the surface potential in a slightly negative value and further blocks the source tunneling current in the off-state. State-of-the-art InAs/InGaAsSb/GaSb nanowire TFETs are employed as the baseline transistor and PZT and silicon-doped HfO2 as ferroelectric materials.</p>}}, author = {{Saeidi, Ali and Rosca, Teodor and Memisevic, Elvedin and Stolichnov, Igor and Cavalieri, Matteo and Wernersson, Lars Erik and Ionescu, Adrian M.}}, issn = {{1530-6992}}, keywords = {{Ferroelectric; Nanowire; Negative Capacitance; Tunnel FET; Voltage Pinning}}, language = {{eng}}, number = {{5}}, pages = {{3255--3262}}, publisher = {{The American Chemical Society (ACS)}}, series = {{Nano Letters}}, title = {{Nanowire Tunnel FET with Simultaneously Reduced Subthermionic Subthreshold Swing and Off-Current due to Negative Capacitance and Voltage Pinning Effects}}, url = {{http://dx.doi.org/10.1021/acs.nanolett.9b05356}}, doi = {{10.1021/acs.nanolett.9b05356}}, volume = {{20}}, year = {{2020}}, }