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Vertical InAs/GaAsSb/GaSb tunneling field-effect transistor on Si with S = 48 mV/decade and Ion = 10 μa/μm for Ioff = 1 nA/μm at Vds = 0.3 v

Memisevic, E. LU ; Svensson, J. LU ; Hellenbrand, M. LU ; Lind, E. LU and Wernersson, L. E. LU (2017) 62nd IEEE International Electron Devices Meeting, IEDM 2016 In 2016 IEEE International Electron Devices Meeting, IEDM 2016 p.1-19
Abstract

We present a vertical nanowire InAs/GaAsSb/GaSb TFET with a highly scaled InAs diameter (20 nm). The device exhibits a minimum subthreshold swing of 48 mV/dec. for Vds = 0.1-0.5 V and achieves an Ion = 10.6 μA/μm for Ioff = 1 nA/μm at Vds = 0.3 V. The lowest subthreshold swing achieved is 44 mV/dec. at Vds= 0.05 V. Furthermore, a benchmarking is performed against state-of-the-art TFETs and MOSFETs demonstrating a record high I60 and performance benefits for Vds between 0.1 and 0.3 V.

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author
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
in
2016 IEEE International Electron Devices Meeting, IEDM 2016
pages
1 - 19
publisher
Institute of Electrical and Electronics Engineers Inc.
conference name
62nd IEEE International Electron Devices Meeting, IEDM 2016
external identifiers
  • scopus:85014496860
ISBN
9781509039012
DOI
10.1109/IEDM.2016.7838450
language
English
LU publication?
yes
id
4154bbb4-74ec-4d4d-9aaf-3344579b90dc
date added to LUP
2017-03-15 09:58:43
date last changed
2018-07-08 04:22:13
@inproceedings{4154bbb4-74ec-4d4d-9aaf-3344579b90dc,
  abstract     = {<p>We present a vertical nanowire InAs/GaAsSb/GaSb TFET with a highly scaled InAs diameter (20 nm). The device exhibits a minimum subthreshold swing of 48 mV/dec. for V<sub>ds</sub> = 0.1-0.5 V and achieves an I<sub>on</sub> = 10.6 μA/μm for I<sub>off</sub> = 1 nA/μm at V<sub>ds</sub> = 0.3 V. The lowest subthreshold swing achieved is 44 mV/dec. at V<sub>ds</sub>= 0.05 V. Furthermore, a benchmarking is performed against state-of-the-art TFETs and MOSFETs demonstrating a record high I60 and performance benefits for V<sub>ds</sub> between 0.1 and 0.3 V.</p>},
  author       = {Memisevic, E. and Svensson, J. and Hellenbrand, M. and Lind, E. and Wernersson, L. E.},
  booktitle    = {2016 IEEE International Electron Devices Meeting, IEDM 2016},
  isbn         = {9781509039012},
  language     = {eng},
  month        = {01},
  pages        = {1--19},
  publisher    = {Institute of Electrical and Electronics Engineers Inc.},
  title        = {Vertical InAs/GaAsSb/GaSb tunneling field-effect transistor on Si with S = 48 mV/decade and I<sub>on</sub> = 10 μa/μm for I<sub>off</sub> = 1 nA/μm at V<sub>ds</sub> = 0.3 v},
  url          = {http://dx.doi.org/10.1109/IEDM.2016.7838450},
  year         = {2017},
}