Vertical InAs/GaAsSb/GaSb tunneling field-effect transistor on Si with S = 48 mV/decade and Ion = 10 μA/μm for Ioff = 1 nA/μm at VDS = 0.3 V
(2017) 62nd IEEE International Electron Devices Meeting, IEDM 2016 p.1-19- Abstract
We present a vertical nanowire InAs/GaAsSb/GaSb TFET with a highly scaled InAs diameter (20 nm). The device exhibits a minimum subthreshold swing of 48 mV/dec. for Vds = 0.1-0.5 V and achieves an Ion = 10.6 μA/μm for Ioff = 1 nA/μm at Vds = 0.3 V. The lowest subthreshold swing achieved is 44 mV/dec. at Vds= 0.05 V. Furthermore, a benchmarking is performed against state-of-the-art TFETs and MOSFETs demonstrating a record high I60 and performance benefits for Vds between 0.1 and 0.3 V.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/4154bbb4-74ec-4d4d-9aaf-3344579b90dc
- author
- Memisevic, E.
LU
; Svensson, J.
LU
; Hellenbrand, M.
LU
; Lind, E.
LU
and Wernersson, L. E. LU
- organization
- publishing date
- 2017-01-31
- type
- Chapter in Book/Report/Conference proceeding
- publication status
- published
- subject
- host publication
- 2016 IEEE International Electron Devices Meeting, IEDM 2016
- article number
- 7838450
- pages
- 1 - 19
- publisher
- IEEE - Institute of Electrical and Electronics Engineers Inc.
- conference name
- 62nd IEEE International Electron Devices Meeting, IEDM 2016
- conference location
- San Francisco, United States
- conference dates
- 2016-12-03 - 2016-12-07
- external identifiers
-
- scopus:85014496860
- ISBN
- 9781509039012
- DOI
- 10.1109/IEDM.2016.7838450
- language
- English
- LU publication?
- yes
- id
- 4154bbb4-74ec-4d4d-9aaf-3344579b90dc
- date added to LUP
- 2017-03-15 09:58:43
- date last changed
- 2024-08-04 17:48:08
@inproceedings{4154bbb4-74ec-4d4d-9aaf-3344579b90dc, abstract = {{<p>We present a vertical nanowire InAs/GaAsSb/GaSb TFET with a highly scaled InAs diameter (20 nm). The device exhibits a minimum subthreshold swing of 48 mV/dec. for V<sub>ds</sub> = 0.1-0.5 V and achieves an I<sub>on</sub> = 10.6 μA/μm for I<sub>off</sub> = 1 nA/μm at V<sub>ds</sub> = 0.3 V. The lowest subthreshold swing achieved is 44 mV/dec. at V<sub>ds</sub>= 0.05 V. Furthermore, a benchmarking is performed against state-of-the-art TFETs and MOSFETs demonstrating a record high I60 and performance benefits for V<sub>ds</sub> between 0.1 and 0.3 V.</p>}}, author = {{Memisevic, E. and Svensson, J. and Hellenbrand, M. and Lind, E. and Wernersson, L. E.}}, booktitle = {{2016 IEEE International Electron Devices Meeting, IEDM 2016}}, isbn = {{9781509039012}}, language = {{eng}}, month = {{01}}, pages = {{1--19}}, publisher = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}}, title = {{Vertical InAs/GaAsSb/GaSb tunneling field-effect transistor on Si with S = 48 mV/decade and I<sub>on</sub> = 10 μA/μm for I<sub>off</sub> = 1 nA/μm at V<sub>DS</sub> = 0.3 V}}, url = {{https://lup.lub.lu.se/search/files/47401685/Vertical_InAs_GaAsSb_GaSb_TFET_on_Si_LU.pdf}}, doi = {{10.1109/IEDM.2016.7838450}}, year = {{2017}}, }